Analysis of liquid mediated friction during alignment in large area UV imprint lithography

2009 ◽  
Vol 95 (5) ◽  
pp. 053110
Author(s):  
Seock Hwan Kang ◽  
Si Hwan Park ◽  
Woo Il Lee
2019 ◽  
Vol 8 (1) ◽  
pp. 199-204 ◽  
Author(s):  
W. Jackson ◽  
Marcia Almanza-Workman ◽  
Alison Chaiken ◽  
Robert Garcia ◽  
Albert Jeans ◽  
...  

2012 ◽  
Vol 22 (39) ◽  
pp. 21154 ◽  
Author(s):  
Jinhe Wang ◽  
Guoquan Min ◽  
Zhitang Song ◽  
Xiuyuan Ni ◽  
Weimin Zhou ◽  
...  

2006 ◽  
Vol 961 ◽  
Author(s):  
Douglas Resnick ◽  
Gerard Schmid ◽  
Mike Miller ◽  
Gary Doyle ◽  
Chris Jones ◽  
...  

ABSTRACTThe Step and Flash Imprint Lithography (S-FILTM) process uses field-to-field drop dispensing of UV curable liquids for step and repeat patterning for applications where high-resolution mix-and-match overlay is desired. Several applications, including patterned media, photonic crystals and wire grid polarizers, are better served by a patterning process that prints the full wafer since alignment requirements are not so stringent. In this paper, a methodology for creating high resolution thin templates for full wafer (or disk) imprinting is described. The methods have been applied toward the imprinting of both patterned media and photonic crystal devices using a large area printing tool developed around the S-FIL process. Techniques for further enhancing the pattern density as well as a method for addressing feature image placement are described. Finally, a process for replicating a Master Template is discussed in detail.


2013 ◽  
Vol 5 (24) ◽  
pp. 13113-13123 ◽  
Author(s):  
Saman Safari Dinachali ◽  
Jarrett Dumond ◽  
Mohammad S. M. Saifullah ◽  
Kwadwo Konadu Ansah-Antwi ◽  
Ramakrishnan Ganesan ◽  
...  

2009 ◽  
Vol 86 (10) ◽  
pp. 1983-1988 ◽  
Author(s):  
Ki-don Kim ◽  
Jun-ho Jeong ◽  
Sang-hu Park ◽  
Dae-geun Choi ◽  
Jun-hyuk Choi ◽  
...  

2019 ◽  
Vol 30 (23) ◽  
pp. 235301 ◽  
Author(s):  
Suok Lee ◽  
Sang Hee Jung ◽  
A-Rang Jang ◽  
Seong In Yoon ◽  
Hyeon Suk Shin ◽  
...  

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Anshuman Cherala ◽  
Parth N. Pandya ◽  
Kenneth M. Liechti ◽  
S. V. Sreenivasan

AbstractEmerging nanoscale applications in energy, electronics, optics, and medicine can exhibit enhanced performance by incorporating nanoshaped structures (nanoshape structures here are defined as shapes enabled by sharp corners with radius of curvature < 5 nm). Nanoshaped fabrication at high-throughput is well beyond the capabilities of advanced optical lithography. Although the highest-resolution e-beams and large-area e-beams have a resolution limit of 5 and 18 nm half-pitch lines or 20 nm half-pitch holes, respectively, their low throughput necessitates finding other fabrication techniques. By using nanoimprint lithography followed by metal-assisted chemical etching, diamond-like nanoshapes with ~3 nm radius corners and 100 nm half-pitch over large areas have been previously demonstrated to improve the nanowire capacitor performance (by ~90%). In future dynamic random-access memory (DRAM) nodes (with DRAM being an exemplar CMOS application), the implementation of nanowire capacitors scaled to <15 nm half-pitch is required. To scale nanoshape imprint lithography down to these half-pitch values, the previously established atomistic simulation framework indicates that the current imprint resist materials are unable to retain the nanoshape structures needed for DRAM capacitors. In this study, the previous simulation framework is extended to study improved shape retention by varying the resist formulations and by introducing novel bridge structures in nanoshape imprinting. This simulation study has demonstrated viable approaches to sub-10 nm nanoshaped imprinting with good shape retention, which are matched by experimental data.


2019 ◽  
Vol 27 (7) ◽  
pp. 1516-1527
Author(s):  
兰红波 LAN Hong-bo ◽  
刘明杨 LIU Ming-yang ◽  
郭良乐 GUO Liang-le ◽  
许 权 XU Quan

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1938
Author(s):  
Hyungjun Lim ◽  
Sanghee Jung ◽  
Junhyoung Ahn ◽  
Kee-Bong Choi ◽  
Geehong Kim ◽  
...  

The effective production of nanopatterned films generally requires a nanopatterned roll mold with a large area. We report on a novel system to fabricate large-area roll molds by recombination of smaller patterned areas in a step-and-repeat imprint lithography process. The process is accomplished in a method similar to liquid transfer imprint lithography (LTIL). The stamp roll with a smaller area takes up the liquid resist by splitting from a donor substrate or a donor roll. The resist is then transferred from a stamp roll to an acceptor roll and stitched together in a longitudinal and, if necessary, in a circumferential direction. During transfer, the nanostructured resist is UV-exposed and crosslinked directly on the acceptor roll. The acceptor roll with the stitched and recombined stamp patterns is ready to be used as a large-area roll mold for roll-based imprinting. A system for this purpose was designed, and its operation was demonstrated taking the example of an acceptor roll of 1 m length and 250 mm diameter, which was covered by 56 patterned areas. Such a system represents an elegant and efficient tool to recombine small patterned areas directly on a large roll mold and opens the way for large-area roll-based processing.


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