Large Area, Facile Oxide Nanofabrication via Step-and-Flash Imprint Lithography of Metal–Organic Hybrid Resins

2013 ◽  
Vol 5 (24) ◽  
pp. 13113-13123 ◽  
Author(s):  
Saman Safari Dinachali ◽  
Jarrett Dumond ◽  
Mohammad S. M. Saifullah ◽  
Kwadwo Konadu Ansah-Antwi ◽  
Ramakrishnan Ganesan ◽  
...  
Keyword(s):  
Imprint Lithography ◽  
Large Area ◽  
Organic Hybrid ◽  
Metal Organic

In situ fabrication of metal–organic hybrid gels in a capillary for online enrichment of trace analytes in aqueous samples

2012 ◽  
Vol 48 (33) ◽  
pp. 3966 ◽  
Author(s):  
Yuling Hu ◽  
Yifeng Fan ◽  
Zelin Huang ◽  
Chaoyong Song ◽  
Gongke Li
Keyword(s):  
Aqueous Samples ◽  
Hybrid Gels ◽  
Organic Hybrid ◽  
In Situ Fabrication ◽  
Metal Organic

Large Area Flexible Electronics Fabricated Using Self-Aligned Imprint Lithography

2019 ◽  
Vol 8 (1) ◽  
pp. 199-204 ◽  
Author(s):  
W. Jackson ◽  
Marcia Almanza-Workman ◽  
Alison Chaiken ◽  
Robert Garcia ◽  
Albert Jeans ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Imprint Lithography ◽  
Large Area

A series of porous 3D inorganic–organic hybrid framework crystalline materials based on 5-aminoisophthalic acid for photocatalytic degradation of crystal violet

2021 ◽  
Vol 45 (7) ◽  
pp. 3432-3440
Author(s):  
Yu Xin ◽  
Jun Zhou ◽  
Yong Heng Xing ◽  
Feng Ying Bai ◽  
Li Xian Sun
Keyword(s):  
Photocatalytic Degradation ◽  
Crystal Violet ◽  
Metal Organic Frameworks ◽  
Synthetic Method ◽  
Crystalline Materials ◽  
Organic Hybrid ◽  
Hybrid Framework ◽  
Metal Organic ◽  
Degradation Properties

Seven 3D metal-organic frameworks have been designed and synthesized by the hydrothermal synthetic method based on the ligand 5-aminoisophthalic acid. Complexes 1-4 have better photocatalytic degradation properties for dyes CV.

Lone-Pair-Electron-Driven Ionic Displacements in a Ferroelectric Metal–Organic Hybrid

2016 ◽  
Vol 55 (20) ◽  
pp. 10337-10342 ◽  
Author(s):  
Wen-Ping Zhao ◽  
Chao Shi ◽  
Alessandro Stroppa ◽  
Domenico Di Sante ◽  
Fanica Cimpoesu ◽  
...  
Keyword(s):  
Lone Pair ◽  
Organic Hybrid ◽  
Lone Pair Electron ◽  
Metal Organic

Solvent-infiltration imprint lithography: a novel method to prepare large area poly(3-hexylthiophene) micro/nano-patterns

2012 ◽  
Vol 22 (39) ◽  
pp. 21154 ◽  
Author(s):  
Jinhe Wang ◽  
Guoquan Min ◽  
Zhitang Song ◽  
Xiuyuan Ni ◽  
Weimin Zhou ◽  
...  
Keyword(s):  
Imprint Lithography ◽  
Large Area ◽  
Novel Method

Five isomorphous polyoxometalate-based inorganic-organic hybrid materials comprising 2D metal-organic layers

2020 ◽  
Vol 286 ◽  
pp. 121302
Author(s):  
Yingying Wu ◽  
Ying Liu ◽  
Yijiao Huang ◽  
Ge Xiao ◽  
Yamin Li ◽  
...  
Keyword(s):  
Hybrid Materials ◽  
Organic Layers ◽  
Organic Hybrid ◽  
Metal Organic

scholarly journals Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy

2020 ◽  
Vol 10 (9) ◽  
pp. 3050 ◽  
Author(s):  
Aditya Prabaswara ◽  
Jens Birch ◽  
Muhammad Junaid ◽  
Elena Alexandra Serban ◽  
Lars Hultman ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Alternative Methods ◽  
Organic Chemical ◽  
Large Area ◽  
Material Quality ◽  
Pulsed Dc ◽  
Metal Organic ◽  
Magnetron Sputter

Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electronic-grade GaN. In this article, we review the basics of reactive sputtering for MSE growth of GaN using a liquid Ga target. Various target biasing schemes are discussed, including direct current (DC), radio frequency (RF), pulsed DC, and high-power impulse magnetron sputtering (HiPIMS). Examples are given for MSE-grown GaN thin films with material quality comparable to those grown using alternative methods such as molecular-beam epitaxy (MBE), metal–organic chemical vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE). In addition, successful GaN doping and the fabrication of practical devices have been demonstrated. Beyond the planar thin film form, MSE-grown GaN nanorods have also been demonstrated through self-assembled and selective area growth (SAG) method. With better understanding in process physics and improvements in material quality, MSE is expected to become an important technology for the growth of GaN.

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