Laser recrystallization of ion-implanted Si by frequency-doubled Nd:YAG laser

1979 ◽  
Author(s):  
R. Tsu ◽  
J. E. Baglin ◽  
T. Y. Tan ◽  
M. Y. Tsai ◽  
K. C. Park ◽  
...  
Keyword(s):  
Nd:Yag Laser ◽  
Laser Recrystallization ◽  
Ion Implanted

Laser induced damage and recrystallization of ion implanted GaAs by frequency-doubled Nd:YAG laser

1979 ◽  
Author(s):  
Raphael Tsu ◽  
John E. Baglin ◽  
Gordon J. Lasher ◽  
James C. Tsang
Keyword(s):  
Nd:Yag Laser ◽  
Laser Induced Damage ◽  
Ion Implanted

Differences between ruby and Nd:YAG laser annealing of ion implanted silicon

1979 ◽  
Vol 69 (6) ◽  
pp. 436-438 ◽  
Author(s):  
Y. Tamminga ◽  
G.E.J. Eggermont ◽  
W.K. Hofker ◽  
D. Hoonhout ◽  
R. Garrett ◽  
...  
Keyword(s):  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Ion Implanted

Anomalous Dopant Redistribution in Nd:YAG Laser Annealed Low Energy Ion Implanted Silicon

1992 ◽  
Vol 31 (Part 1, No. 5A) ◽  
pp. 1287-1289 ◽  
Author(s):  
Chinnaswamy Mohan Harish ◽  
Vikram Kumar ◽  
Anantharamaiah Prabhakar
Keyword(s):  
Nd:Yag Laser ◽  
Low Energy ◽  
Dopant Redistribution ◽  
Ion Implanted

Characterization of pulsed Nd:YAG laser‐annealed, arsenic‐ion‐implanted silicon

1981 ◽  
Vol 52 (2) ◽  
pp. 1038-1049 ◽  
Author(s):  
J. S. Williams ◽  
W. L. Brown ◽  
G. K. Celler ◽  
H. J. Leamy ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Nd:Yag Laser ◽  
Pulsed Nd:Yag Laser ◽  
Ion Implanted

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

A technique to prepare cross-sectional TEM specimens of semiconducting devices

1986 ◽  
Vol 44 ◽  
pp. 742-743
Author(s):  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Sample Surface ◽  
Specific Region ◽  
Cross Sectional ◽  
Thin Sections ◽  
The Past ◽  
Device Structures ◽  
Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

Preparation of Backthinned Ceramic Specimens

1985 ◽  
Vol 43 ◽  
pp. 182-183
Author(s):  
A. T. Fisher ◽  
P. Angelini
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Vacuum System ◽  
Back Surface ◽  
Surface Microstructure ◽  
Ion Milling ◽  
Near Surface ◽  
Depth Profiles ◽  
Analytical Electron ◽  
Ion Implanted

Analytical electron microscopy (AEM) of the near surface microstructure of ion implanted ceramics can provide much information about these materials. Backthinning of specimens results in relatively large thin areas for analysis of precipitates, voids, dislocations, depth profiles of implanted species and other features. One of the most critical stages in the backthinning process is the ion milling procedure. Material sputtered during ion milling can redeposit on the back surface thereby contaminating the specimen with impurities such as Fe, Cr, Ni, Mo, Si, etc. These impurities may originate from the specimen, specimen platform and clamping plates, vacuum system, and other components. The contamination may take the form of discrete particles or continuous films [Fig. 1] and compromises many of the compositional and microstructural analyses. A method is being developed to protect the implanted surface by coating it with NaCl prior to backthinning. Impurities which deposit on the continuous NaCl film during ion milling are removed by immersing the specimen in water and floating the contaminants from the specimen as the salt dissolves.

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