Thermally enhanced Nd:YAG laser annealing of ion implanted silicon

1982 ◽  
Vol 20 (1) ◽  
pp. 92-93 ◽  
Author(s):  
S. R. Wilson ◽  
R. B. Gregory
Keyword(s):  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Ion Implanted

Differences between ruby and Nd:YAG laser annealing of ion implanted silicon

1979 ◽  
Vol 69 (6) ◽  
pp. 436-438 ◽  
Author(s):  
Y. Tamminga ◽  
G.E.J. Eggermont ◽  
W.K. Hofker ◽  
D. Hoonhout ◽  
R. Garrett ◽  
...  
Keyword(s):  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Ion Implanted

Dynamic behaviors of pulsed-laser annealing in ion-implanted silicon studied by measuring the optical reflectance

1979 ◽  
Author(s):  
Kouichi Murakami ◽  
Kenji Gamo ◽  
Susumu Namba ◽  
Mitsuo Kawabe ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Optical Reflectance ◽  
Dynamic Behaviors ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

scholarly journals Pulsed Laser Annealing of Ion Implanted Si

1979 ◽  
Vol 7 (2) ◽  
pp. 152-160
Author(s):  
Kouichi MURAKAMI ◽  
Eiji IKAWA ◽  
A. H. ORABY ◽  
Kenji GAMO ◽  
Susumu NAMBA ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Extended defects in ion-implanted si during nanosecond laser annealing

2014 ◽  
Author(s):  
F. Cristiano ◽  
Y. Qiu ◽  
E. Bedel-Pereira ◽  
K. Huet ◽  
F. Mazzamuto ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Nanosecond Laser ◽  
Extended Defects ◽  
Ion Implanted

Pulsed laser annealing of ion implanted silicon

1979 ◽  
Author(s):  
J. Stephen ◽  
B. J. Smith ◽  
N. G. Blamires
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Pulsed excimer and CO2 laser annealing of ion‐implanted silicon

1985 ◽  
Vol 3 (4) ◽  
pp. 1836-1838 ◽  
Author(s):  
J. Narayan ◽  
R. B. James ◽  
O. W. Holland ◽  
M. J. Aziz
Keyword(s):  
Co2 Laser ◽  
Laser Annealing ◽  
Ion Implanted

Laser annealing of ion-implanted indium phosphide

1979 ◽  
Author(s):  
A. G. Cullis ◽  
H. C. Webber ◽  
D. S. Robertson
Keyword(s):  
Indium Phosphide ◽  
Laser Annealing ◽  
Ion Implanted
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