The annealing temperature and films thickness effect on the surface morphology, preferential orientation and dielectric property of NiO films

2019 ◽  
Vol 493 ◽  
pp. 396-403 ◽  
Author(s):  
Pan Yang ◽  
Lingxia Li ◽  
Shihui Yu ◽  
Haoran Zheng ◽  
Wei Peng
Keyword(s):  
Dielectric Property ◽  
Surface Morphology ◽  
Annealing Temperature ◽  
Preferential Orientation ◽  
Thickness Effect ◽  
Nio Films

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

Surface morphology and preferential orientation growth of TaC crystals formed by chemical vapor deposition

2009 ◽  
Vol 517 (11) ◽  
pp. 3235-3239 ◽  
Author(s):  
Xiang Xiong ◽  
Zhao-ke Chen ◽  
Bai-yun Huang ◽  
Guo-dong Li ◽  
Feng Zheng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Preferential Orientation ◽  
Orientation Growth

scholarly journals Preparation, Raman spectroscopy, surface morphology and optical properties of TiPcCl2 nanostructured films: thickness effect

2021 ◽  
Vol 53 (9) ◽  
Author(s):  
S. A. Al-Ghamdi ◽  
Taymour A. Hamdalla ◽  
A. A. A. Darwish ◽  
Ahmed Obaid M. Alzahrani ◽  
E. F. M. El-Zaidia ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Optical Properties ◽  
Surface Morphology ◽  
Thickness Effect ◽  
Nanostructured Films

Surface morphology and electrical property evolution of super-thin Pt film on 6H-SiC substrate during annealing

2011 ◽  
Vol 26 (3) ◽  
pp. 256-261
Author(s):  
Jingjing Yang ◽  
Wenxia Yuan ◽  
Xiaopeng Zeng
Keyword(s):  
Electrical Conductivity ◽  
Electrical Property ◽  
Surface Morphology ◽  
Thin Layer ◽  
Annealing Temperature ◽  
Composition Gradient ◽  
Mechanism Analysis ◽  
Pt Films ◽  
Low Solubility ◽  
Crystalline Graphite

We reported the surface morphology and electrical property of super-thin Pt films, ∼2 nm thick, deposited on 6H-SiC (0001) substrates and subsequently annealed from 400 to 1000 °C. The surfaces of the films were found to have a feature of islands growth, and the sizes of the islands increased with increasing annealing temperature. Free carbon, produced by selective reactions between Pt and SiC, diffused toward the top surface across the product layers due to low solubility and composition gradient of carbon throughout the reaction zone. A dramatic change of electrical conductivity of the films was observed. A mechanism analysis reveals that the origin came from the contribution of aggregation of islands on the surface and formation of Pt silicides and a thin layer of crystalline graphite.

Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO3 Ferroelectrics/Insulator Stacking Layers

2006 ◽  
Vol 301 ◽  
pp. 65-70 ◽  
Author(s):  
Kazuyuki Suzuki ◽  
Kiyotaka Tanaka ◽  
Tatsuo Kimura ◽  
Kaori Nishizawa ◽  
Takeshi Miki ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Property ◽  
Surface Morphology ◽  
Insulator Layer ◽  
Surface Smoothness ◽  
Y2o3 Layer ◽  
Mno3 Film ◽  
Mfis Structure

The (Y,Yb)MnO3 films were crystallized on Y2O3 layers using alkoxy-derived precursor solutions. As a result of investigation of the effect of the Y2O3 layer on the dielectric properties of the (Y,Yb)MnO3/Y2O3/Si, the crystallographic properties such as the orientation and surface morphology of the (Y,Yb)MnO3 thin films depended on the crystallographic appearance of the insulator layer. Following that, the dielectric properties of the MFIS structures varied. For the construction of excellent MFIS structure, the improvement of the orientation, crystallinity, and surface smoothness of the (Y,Yb)MnO3 film by the optimization of the microstructure and dielectric property of the insulator is necessary.

Surface Morphology and Infrared Absorption of Silicon Irradiated by Picosecond Laser Pulses in SF6

2011 ◽  
Vol 418-420 ◽  
pp. 77-81 ◽  
Author(s):  
De Wei Liu ◽  
Yong Guang Huang ◽  
Xiao Ning Zhu ◽  
Xi Yuan Wang ◽  
Hai Juan Yu ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Laser Fluence ◽  
Annealing Temperature ◽  
Picosecond Laser ◽  
Laser Pulses ◽  
Multiple Reflections ◽  
Picosecond Laser Pulses ◽  
Wide Wavelength Range ◽  
Impurity Bands ◽  
Tentative Explanation

The microstructured samples were prepared by irradiating silicon surface with picosecond laser pulses in SF6. The surface morphology of microstructured samples irradiated at different laser fluence was characterized by SEM. The samples exhibited high optical absorptance over a wide wavelength range between 300 and 2700 nm. The absorptance of samples irradiated with the fluence of 1.0 J/cm2was measured to be up to 95% between 1100 and 2700 nm. The infared absorptance of the surface-structured samples increased with increasing fluence. Whereas, as the annealing temperature was increased, the infared absorptance of the samples irradiated at the same fluence decreased. A tentative explanation for the effects of laser fluence and annealing temperature on the infared absorptance has been proposed based on the formation of mid-band gap impurity bands and the multiple reflections of light between microstructures.

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