Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes

2009 ◽  
Vol 106 (1) ◽  
pp. 013101 ◽  
Author(s):  
Yongjian Sun ◽  
Tongjun Yu ◽  
Huabo Zhao ◽  
Xudong Shan ◽  
Xinzheng Zhang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Current Increase ◽  
Light Emitting ◽  
Lift Off

Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes

2007 ◽  
Vol 90 (25) ◽  
pp. 251110 ◽  
Author(s):  
Yewchung Sermon Wu ◽  
Ji-Hao Cheng ◽  
Wei Chih Peng ◽  
Hao Ouyang
Keyword(s):  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Laser Sources ◽  
Lift Off

Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes

2009 ◽  
Vol 95 (17) ◽  
pp. 173507 ◽  
Author(s):  
M. Meneghini ◽  
N. Trivellin ◽  
M. Pavesi ◽  
M. Manfredi ◽  
U. Zehnder ◽  
...  
Keyword(s):  
Leakage Current ◽  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Light Emitting

Natural substrate lift-off technique for vertical light-emitting diodes

2014 ◽  
Vol 7 (4) ◽  
pp. 042103 ◽  
Author(s):  
Chia-Yu Lee ◽  
Yu-Pin Lan ◽  
Po-Min Tu ◽  
Shih-Chieh Hsu ◽  
Chien-Chung Lin ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Natural Substrate ◽  
Light Emitting ◽  
Lift Off

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

scholarly journals Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes

AIP Advances ◽  
2015 ◽  
Vol 5 (8) ◽  
pp. 087151 ◽  
Author(s):  
Ting Zhi ◽  
Tao Tao ◽  
Bin Liu ◽  
Yi Li ◽  
Zhe Zhuang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Light Emitting Diodes ◽  
Tunneling Model ◽  
Light Emitting
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