Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes

2007 ◽  
Vol 90 (25) ◽  
pp. 251110 ◽  
Author(s):  
Yewchung Sermon Wu ◽  
Ji-Hao Cheng ◽  
Wei Chih Peng ◽  
Hao Ouyang
2009 ◽  
Vol 106 (1) ◽  
pp. 013101 ◽  
Author(s):  
Yongjian Sun ◽  
Tongjun Yu ◽  
Huabo Zhao ◽  
Xudong Shan ◽  
Xinzheng Zhang ◽  
...  

2014 ◽  
Vol 7 (4) ◽  
pp. 042103 ◽  
Author(s):  
Chia-Yu Lee ◽  
Yu-Pin Lan ◽  
Po-Min Tu ◽  
Shih-Chieh Hsu ◽  
Chien-Chung Lin ◽  
...  

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.


2004 ◽  
Author(s):  
Fang-I Lai ◽  
Jung-Tang Chu ◽  
Chen-Fu Chu ◽  
Wen-Deng Liang ◽  
H.C. Kuo ◽  
...  

2016 ◽  
Vol 46 (4) ◽  
pp. 044614
Author(s):  
XiaoMin LI ◽  
YueHan ZONG ◽  
Yu JIANG ◽  
Lin BAI ◽  
GuoFeng SONG ◽  
...  

2016 ◽  
Vol 18 (4) ◽  
pp. 2747-2755 ◽  
Author(s):  
Rahul K. Sharma ◽  
Monica Katiyar ◽  
I. V. Kameshwar Rao ◽  
K. N. Narayanan Unni ◽  
Deepak Deepak

(i) The OLED as fabricated (standard). (ii) An OLED annealed, fast cooling, no reverse bias. (iii) As in (ii) except reverse bias during annealing, but not cooling. (iv) As in (iii) with reverse bias also during cooling. (v) As in (iii), except that cooling is slower. (vi) As in (iv), except that cooling is slower.


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