GaN-based light-emitting diodes by laser lift-off with electroplated copper

2013 ◽  
Author(s):  
Wun-Wei Lin ◽  
Lung-Chien Chen ◽  
Chung-An Chiou
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Lift Off ◽  
Electroplated Copper

Natural substrate lift-off technique for vertical light-emitting diodes

2014 ◽  
Vol 7 (4) ◽  
pp. 042103 ◽  
Author(s):  
Chia-Yu Lee ◽  
Yu-Pin Lan ◽  
Po-Min Tu ◽  
Shih-Chieh Hsu ◽  
Chien-Chung Lin ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Natural Substrate ◽  
Light Emitting ◽  
Lift Off

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

Fabrication of large-area GaN Vertical Light Emitting Diodes on Copper Substrates by Laser Lift-off

2004 ◽  
Author(s):  
Fang-I Lai ◽  
Jung-Tang Chu ◽  
Chen-Fu Chu ◽  
Wen-Deng Liang ◽  
H.C. Kuo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Large Area ◽  
Light Emitting ◽  
Lift Off

Current spreading and thermal effect in thin-film Light-Emitting Diodes for epitaxial lift-off technology

2016 ◽  
Vol 46 (4) ◽  
pp. 044614
Author(s):  
XiaoMin LI ◽  
YueHan ZONG ◽  
Yu JIANG ◽  
Lin BAI ◽  
GuoFeng SONG ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Effect ◽  
Light Emitting Diodes ◽  
Current Spreading ◽  
Light Emitting ◽  
Lift Off

Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes

2007 ◽  
Vol 90 (25) ◽  
pp. 251110 ◽  
Author(s):  
Yewchung Sermon Wu ◽  
Ji-Hao Cheng ◽  
Wei Chih Peng ◽  
Hao Ouyang
Keyword(s):  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Laser Sources ◽  
Lift Off

Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

2007 ◽  
Vol 90 (16) ◽  
pp. 161115 ◽  
Author(s):  
Y. J. Lee ◽  
P. C. Lin ◽  
T. C. Lu ◽  
H. C. Kuo ◽  
S. C. Wang
Keyword(s):  
White Light ◽  
Wafer Bonding ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Lift Off ◽  
White Light Emitting Diodes

Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique

2004 ◽  
Vol 43 (No. 3B) ◽  
pp. L411-L413 ◽  
Author(s):  
Tetsuo Fujii ◽  
Aurelien David ◽  
Carole Schwach ◽  
Paul Morgan Pattison ◽  
Rajat Sharma ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Lift Off ◽  
Micro Cavity ◽  
Cavity Effect

Vertical-conducting p-side-up GaN/mirror/Si light-emitting diodes by laser lift-off and wafer-transfer techniques

2004 ◽  
Vol 201 (12) ◽  
pp. 2699-2703 ◽  
Author(s):  
Dong-Sing Wuu ◽  
Shun-Cheng Hsu ◽  
Shao-Hua Huang ◽  
Ray-Hua Horng
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Lift Off

scholarly journals Performance analysis of GaN-based micro light-emitting diodes by laser lift-off process

2019 ◽  
Vol 1 (2) ◽  
pp. 58-63 ◽  
Author(s):  
Sheng-Hui Li ◽  
Chia-Ping Lin ◽  
Yen-Hsiang Fang ◽  
Wei-Hung Kuo ◽  
Ming-Hsien Wu ◽  
...  
Keyword(s):  
Performance Analysis ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Lift Off
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