scholarly journals Charging and discharging of graphene in ambient conditions studied with scanning probe microscopy

2009 ◽  
Vol 94 (23) ◽  
pp. 233105 ◽  
Author(s):  
A. Verdaguer ◽  
M. Cardellach ◽  
J. J. Segura ◽  
G. M. Sacha ◽  
J. Moser ◽  
...  
Keyword(s):  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Ambient Conditions ◽  
Probe Microscopy

The role of ambient ice-like water adlayers formed at the interfaces of graphene on hydrophobic and hydrophilic substrates probed using scanning probe microscopy

2015 ◽  
Vol 17 (21) ◽  
pp. 13964-13972 ◽  
Author(s):  
Thavasiappan Gowthami ◽  
Gopal Tamilselvi ◽  
George Jacob ◽  
Gargi Raina
Keyword(s):  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Ambient Conditions ◽  
Probe Microscopy

Ice-like water adlayer growth under ambient conditions for graphene on hydrophobic and hydrophilic substrates.

Measuring the Interaction Force Between a Tip and a Substrate Using a Quartz Tuning Fork Under Ambient Conditions

2006 ◽  
Vol 6 (11) ◽  
pp. 3455-3459
Author(s):  
Yexian Qin ◽  
R. Reifenberger
Keyword(s):  
Resonant Frequency ◽  
Scanning Probe Microscopy ◽  
Tuning Fork ◽  
Quartz Tuning Fork ◽  
Interaction Force ◽  
Scanning Probe ◽  
Ambient Conditions ◽  
Probe Microscopy ◽  
Tuning Forks ◽  
Force Data

Tuning forks mounted with sharp tips provide an alternate method to silicon microcantilevers for probing the tip-substrate interaction in scanning probe microscopy. The high quality factor and stable resonant frequency of the tuning fork allow accurate measurements of small shifts in the resonant frequency as the tip approaches the substrate. To permit an accurate measure of surface interaction forces, the electrical and piezomechanical properties of a tuning fork has been characterized using techniques derived from scanning probe microscopy. After proper calibration, representative interaction force data for a conventional Si tip and an HOPG substrate are obtained under ambient conditions.

Advanced applications and instrumentation for scanning probe microscopy (SPM)

1996 ◽  
Vol 54 ◽  
pp. 852-853
Author(s):  
D.A. Grigg
Keyword(s):  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Cellulose Microfibrils ◽  
Phase Image ◽  
Pulp Fiber ◽  
Phase Imaging ◽  
Topographic Image ◽  
Ambient Conditions ◽  
Probe Microscopy ◽  
Cellulose Component

Scanning probe microscopy (SPM) has continued to advance into new applications and disciplines every year. The development of new techniques and instrumentation for SPM's have enabled researchers to study sample surfaces in a variety of ambient conditions and using a number of contrast mechanisms. A review of new SPM techniques and instrumentation will be presented.Phase imaging is a new technique that provides nanometer-scale information about variations in surface properties, such as adhesion, friction, viscoelasticity, composition and perhaps others, not revealed by any other single SPM technique. An example using phase imaging to differentiate component phases of composite materials is shown in Fig. 1 of wood pulp fiber. The left image is a normal topographic image acquired using the TappingMode™ technique. The right image is the simultaneous phase image. The phase image highlights cellulose microfibrils and a lignin component atop the cellulose component not seen in the topographic image. The details of phase imaging will be discussed.

The Role of Scanning Probe Microscopy in Drug Delivery Research

1996 ◽  
Vol 13 (3-4) ◽  
pp. 225-256 ◽  
Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams
Keyword(s):  
Drug Delivery ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

Cross-Section Sample Preparation Method for Imaging Dopant Related Anomalies Using Scanning Probe Microscopy Techniques

2014 ◽  
Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Preparation Method ◽  
Fault Isolation ◽  
Scanning Probe ◽  
Sample Preparation Method ◽  
Probe Microscopy ◽  
Section Sample

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.

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