Characterization of diamond ultraviolet detectors fabricated with high-quality single-crystalline chemical vapor deposition films

2009 ◽  
Vol 94 (22) ◽  
pp. 223511 ◽  
Author(s):  
Y. Iwakaji ◽  
M. Kanasugi ◽  
O. Maida ◽  
T. Ito
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Single Crystalline ◽  
Ultraviolet Detectors

Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films

1990 ◽  
Vol 193-194 ◽  
pp. 595-609 ◽  
Author(s):  
S.V Nguyen ◽  
D Dobuzinsky ◽  
D Dopp ◽  
R Gleason ◽  
M Gibson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
High Quality

Growth and Characterization of High Quality Si 1- x-y Ge x C y Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition

1999 ◽  
Vol 16 (10) ◽  
pp. 750-752 ◽  
Author(s):  
Zhen Qi ◽  
Jing-yun Huang ◽  
Zhi-zhen Ye ◽  
Huan-ming Lu ◽  
Wei-hua Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
High Quality

Chemical vapor deposition and characterization of undoped and nitrogen‐doped single crystalline 6H‐SiC

1992 ◽  
Vol 72 (11) ◽  
pp. 5437-5442 ◽  
Author(s):  
S. Karmann ◽  
W. Suttrop ◽  
A. Schöner ◽  
M. Schadt ◽  
C. Haberstroh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Crystalline ◽  
Nitrogen Doped

A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications

2008 ◽  
Vol 1068 ◽  
Author(s):  
Mustafa Jamil ◽  
Joseph P Donnelly ◽  
Se-Hoon Lee ◽  
Davood Shahrjerdi ◽  
Tarik Akyol ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Mobility ◽  
Compressive Strain ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
High Electron ◽  
High Quality

ABSTRACTWe report the growth and characterization of thin germanium-carbon layers grown directly on Si (111) by ultra high-vacuum chemical vapor deposition. The thickness of the films studied is 8-20 nm. The incorporation of small amount (less than 0.5%) of carbon facilitates 2D growth of high quality Ge crystals grown directly on Si (111) without the need of a buffer layer. The Ge1−xCx layers were grown in ultra high vacuum chemical vapor deposition chamber, at a typical pressure of 50 mTorr and at a growth temperature of 440 °C. CH3GeH3 and GeH4 gases were used as the precursors for the epitaxial growth. The Ge1−xCx films were characterized by atomic force microscopy (AFM), secondary ion mass spectroscopy, x-ray diffraction, cross-sectional transmission electron microscopy and Raman spectroscopy. The AFM rms roughness of Ge1−xCx grown directly on Si (111) is only 0.34 nm, which is by far the lowest rms roughness of Ge films grown directly on Si (111). The dependence of growth rate and rms roughness of the films on temperature, C incorporation and deposition pressure was studied. In Ge, (111) surface orientation has the highest electron mobility; however, compressive strain in Ge degrades electron mobility. The technique of C incorporation leads to a low defect density Ge layer on Si (111), well above the critical thickness. Hence high quality crystalline layer of Ge directly on Si (111) can be achieved without compressive strain. The fabricated MOS capacitors exhibit well-behaved electrical characteristics. Thus demonstrate the feasibility of Ge1−xCx layers on Si (111) for future high-carrier-mobility MOS devices that take advantage of high electron mobility in Ge (111).

Two-dimensional semiconducting and single-crystalline antimony trioxide directly-grown on monolayer graphene

2019 ◽  
Vol 55 (17) ◽  
pp. 2473-2476 ◽  
Author(s):  
Qinke Wu ◽  
Taehwan Jeong ◽  
Sanwoo Park ◽  
Jia Sun ◽  
Hyunmin Kang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Synthesis And Characterization ◽  
Monolayer Graphene ◽  
Antimony Trioxide ◽  
Two Dimensional ◽  
Single Crystalline ◽  
Cvd Growth

The first successful synthesis and characterization of single-crystalline two-dimensional (2D) semiconducting antimony tri oxide (Sb2O3) by direct chemical vapor deposition (CVD) growth on monolayer graphene is presented herein.

Characterization of Boron Carbide Films Formed by PECVD

1992 ◽  
Vol 242 ◽  
Author(s):  
John Mazurowski ◽  
Sunwoo Lee ◽  
G. Ramseyer ◽  
P. A. Dowben
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Boron Carbide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Band Edge ◽  
Photoluminescence Spectra ◽  
High Quality ◽  
Infra Red

ABSTRACTBoron carbide films have been fabricated from pentaborane (B5H9) and methane using plasma enhanced chemical vapor deposition (PECVD). Availability of high quality specimens has facilitated analysis of electronic and optical properties. We have undertaken measurements of photoluminescence spectra and infra-red band-edge absorption. Results show that the bandgap is strongly influenced by the ratio of boron to carbon. There is evidence for the existence of shallow trapping levels.

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