Characterization of Boron Carbide Films Formed by PECVD

1992 ◽  
Vol 242 ◽  
Author(s):  
John Mazurowski ◽  
Sunwoo Lee ◽  
G. Ramseyer ◽  
P. A. Dowben
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Boron Carbide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Band Edge ◽  
Photoluminescence Spectra ◽  
High Quality ◽  
Infra Red

ABSTRACTBoron carbide films have been fabricated from pentaborane (B5H9) and methane using plasma enhanced chemical vapor deposition (PECVD). Availability of high quality specimens has facilitated analysis of electronic and optical properties. We have undertaken measurements of photoluminescence spectra and infra-red band-edge absorption. Results show that the bandgap is strongly influenced by the ratio of boron to carbon. There is evidence for the existence of shallow trapping levels.

Synthesis of Graphene-ZnO Heterogeneous Nanostructures by Chemical Vapor Deposition

2011 ◽  
Vol 1348 ◽  
Author(s):  
Jian Lin ◽  
Miroslav Penchev ◽  
Guoping Wang ◽  
Rajat K Paul ◽  
Jiebin Zhong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Building Blocks ◽  
Zno Nanostructures ◽  
Large Area ◽  
Graphene Layers

ABSTRACTIn this work, we report the synthesis and characterization of three dimensional heterostructures graphene nanostructures (HGN) comprising continuous large area graphene layers and ZnO nanostructures, fabricated via chemical vapor deposition. Characterization of large area HGN demonstrates that it consists of 1-5 layers of graphene, and exhibits high optical transmittance and enhanced electrical conductivity. Electron microscopy investigation of the three dimensional heterostructures shows that the morphology of ZnO nanostructures is highly dependent on the growth temperature. It is observed that ordered crystalline ZnO nanostructures are preferably grown along the <0001> direction. Ultraviolet spectroscopy indicates that the CVD grown HGN layers has excellent optical properties. A combination of electrical and optical properties of graphene and ZnO building blocks in ZnO based HGN provides unique characteristics for opportunities in future optoelectronic devices.

Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films

1990 ◽  
Vol 193-194 ◽  
pp. 595-609 ◽  
Author(s):  
S.V Nguyen ◽  
D Dobuzinsky ◽  
D Dopp ◽  
R Gleason ◽  
M Gibson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
High Quality

Growth and Characterization of High Quality Si 1- x-y Ge x C y Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition

1999 ◽  
Vol 16 (10) ◽  
pp. 750-752 ◽  
Author(s):  
Zhen Qi ◽  
Jing-yun Huang ◽  
Zhi-zhen Ye ◽  
Huan-ming Lu ◽  
Wei-hua Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
High Quality

A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications

2008 ◽  
Vol 1068 ◽  
Author(s):  
Mustafa Jamil ◽  
Joseph P Donnelly ◽  
Se-Hoon Lee ◽  
Davood Shahrjerdi ◽  
Tarik Akyol ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Mobility ◽  
Compressive Strain ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
High Electron ◽  
High Quality

ABSTRACTWe report the growth and characterization of thin germanium-carbon layers grown directly on Si (111) by ultra high-vacuum chemical vapor deposition. The thickness of the films studied is 8-20 nm. The incorporation of small amount (less than 0.5%) of carbon facilitates 2D growth of high quality Ge crystals grown directly on Si (111) without the need of a buffer layer. The Ge1−xCx layers were grown in ultra high vacuum chemical vapor deposition chamber, at a typical pressure of 50 mTorr and at a growth temperature of 440 °C. CH3GeH3 and GeH4 gases were used as the precursors for the epitaxial growth. The Ge1−xCx films were characterized by atomic force microscopy (AFM), secondary ion mass spectroscopy, x-ray diffraction, cross-sectional transmission electron microscopy and Raman spectroscopy. The AFM rms roughness of Ge1−xCx grown directly on Si (111) is only 0.34 nm, which is by far the lowest rms roughness of Ge films grown directly on Si (111). The dependence of growth rate and rms roughness of the films on temperature, C incorporation and deposition pressure was studied. In Ge, (111) surface orientation has the highest electron mobility; however, compressive strain in Ge degrades electron mobility. The technique of C incorporation leads to a low defect density Ge layer on Si (111), well above the critical thickness. Hence high quality crystalline layer of Ge directly on Si (111) can be achieved without compressive strain. The fabricated MOS capacitors exhibit well-behaved electrical characteristics. Thus demonstrate the feasibility of Ge1−xCx layers on Si (111) for future high-carrier-mobility MOS devices that take advantage of high electron mobility in Ge (111).

scholarly journals Optical properties of boron carbide (B5C) thin films fabricated by plasma‐enhanced chemical‐vapor deposition

1996 ◽  
Vol 79 (11) ◽  
pp. 8643-8647 ◽  
Author(s):  
Ahmad A. Ahmad ◽  
N. J. Ianno ◽  
P. G. Snyder ◽  
D. Welipitiya ◽  
D. Byun ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Boron Carbide ◽  
Vapor Deposition ◽  
Chemical Vapor
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