Effects of pulse bias duty cycle on fullerenelike nanostructure and mechanical properties of hydrogenated carbon films prepared by plasma enhanced chemical vapor deposition method

2009 ◽  
Vol 105 (10) ◽  
pp. 106113 ◽  
Author(s):  
Li Ji ◽  
Hongxuan Li ◽  
Fei Zhao ◽  
Weilong Quan ◽  
Jianmin Chen ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Chemical Vapor Deposition ◽  
Duty Cycle ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method

Continuous SiC Fibre-Reinforced SiC Matrix Composites: An Analysis Based on Patents

2013 ◽  
Vol 377 ◽  
pp. 28-32 ◽  
Author(s):  
Xue Guang Huang ◽  
Yao Qi Li ◽  
Nan Zhao ◽  
Hui Shi ◽  
Xi Yao ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Thermal Conductivity ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Infiltration ◽  
Chemical Vapor Deposition Method ◽  
Matrix Composites ◽  
Deposition Method ◽  
Statistical Results

Over 1800 SiCf/SiC patents have been searched and identified in this work. SiCf/SiC technologies are emerging rapidly from 2005 in China. However, the extremely low proportion of patents owned by companies indicates that more effort and focus on SiCf/SiC are extremely needed to enable industrial application. Statistical results of worldwide patents reveal that the modification of the mechanical properties is the most urgent demand in industry; meanwhile, the analysis results show that the CVI/CVD (chemical vapor infiltration /chemical vapor deposition) method appears promising to enhance the mechanical properties, as well as to improve the thermal conductivity and stability, to lower the costs and to enhance the controllability of the product.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

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