Room temperature free carrier tunneling in dilute nitride based quantum well - quantum dot tunnel injection system for 1.3 μm

2009 ◽  
Vol 94 (17) ◽  
pp. 171906 ◽  
Author(s):  
W. Rudno-Rudziński ◽  
G. Sęk ◽  
K. Ryczko ◽  
M. Syperek ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Room Temperature ◽  
Free Carrier ◽  
Injection System ◽  
Dilute Nitride ◽  
Carrier Tunneling ◽  
Tunnel Injection

Carrier wavefunction control in a dilute nitride-based quantum well—a quantum dot tunnel injection system for 1.3 µm emission

2011 ◽  
Vol 26 (8) ◽  
pp. 085004 ◽  
Author(s):  
W Rudno-Rudziński ◽  
K Ryczko ◽  
G Sęk ◽  
J Misiewicz ◽  
E S Semenova ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Injection System ◽  
Dilute Nitride ◽  
Tunnel Injection

Electronic structure properties of the In(Ga)As/GaAs quantum dot–quantum well tunnel-injection system

2009 ◽  
Vol 24 (8) ◽  
pp. 085011 ◽  
Author(s):  
Grzegorz Sęk ◽  
Janusz Andrzejewski ◽  
Krzysztof Ryczko ◽  
Przemysław Poloczek ◽  
Jan Misiewicz ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Quantum Dot ◽  
Quantum Well ◽  
Injection System ◽  
Gaas Quantum Dot ◽  
Tunnel Injection ◽  
Structure Properties

Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structures

1999 ◽  
Vol 14 (7) ◽  
pp. 2794-2798 ◽  
Author(s):  
W. Liu ◽  
M. F. Li ◽  
K. L. Teo ◽  
Nakao Akutsu ◽  
Koh Matsumoto
Keyword(s):  
Quantum Well ◽  
Absorption Edge ◽  
Room Temperature ◽  
Carrier Screening ◽  
Free Carrier ◽  
Exciton Absorption ◽  
Quantum Well Structures ◽  
Bulk Absorption ◽  
Lock In ◽  
Reference Phase

Room-temperature photovoltaic spectroscopy was applied to study undoped GaN, n-type GaN, and InGaN quantum well structures. Clear exciton absorption was observed in the photovoltaic spectra of the undoped GaN, and polarization measurements were made to identify the exciton absorption. For the n-type GaN sample, instead of the exciton absorption we observed only bulk absorption edge, which may be due to the free carrier screening effect. For the InGaN quantum well structures, the photovoltaic spectra showed relatively complicated line shape due to the overlap of the signals from different layers. By changing the reference phase of the lock-in amplifier, we were able to suppress some of the signals and thus identify the origin of the corresponding signal.

High-speed tunnel-injection quantum well and quantum dot lasers

1998 ◽  
Author(s):  
Pallab Bhattacharya ◽  
Xiangkun Zhang ◽  
Yahsing Yuan ◽  
Kishore K. Kamath ◽  
David Klotzkin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
High Speed ◽  
Quantum Dot Lasers ◽  
Tunnel Injection

Comparison of quantum dot lasers with and without tunnel-injection quantum well

2019 ◽  
Author(s):  
Sven Bauer ◽  
Vitalii Sichkovskyi ◽  
Florian Schnabel ◽  
Anna Sengül ◽  
Johann Peter Reithmaier ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Dot Lasers ◽  
Tunnel Injection

Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser

2012 ◽  
Vol 48 (11) ◽  
pp. 644 ◽  
Author(s):  
S.M. Chen ◽  
K.J. Zhou ◽  
Z.Y. Zhang ◽  
O. Wada ◽  
D.T.D. Childs ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Room Temperature ◽  
Quantum Dot Laser
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