Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure laser

2002 ◽  
Vol 81 (24) ◽  
pp. 4604-4606 ◽  
Author(s):  
G. Walter ◽  
N. Holonyak ◽  
R. D. Heller ◽  
R. D. Dupuis
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Visible Spectrum ◽  
Heterostructure Laser

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

2017 ◽  
Vol 110 (6) ◽  
pp. 061104 ◽  
Author(s):  
Xin Yan ◽  
Wei Wei ◽  
Fengling Tang ◽  
Xi Wang ◽  
Luying Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser ◽  
Gaas Nanowire ◽  
Low Threshold

Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

2008 ◽  
Vol 25 (4) ◽  
pp. 1281-1283 ◽  
Author(s):  
Zhang Li-Qun ◽  
Zhang Shu-Ming ◽  
Yang Hui ◽  
Cao Qing ◽  
Ji Lian ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multi Quantum Well

Green-to-Yellow Continuous-Wave Operation of BeZnCdSe Quantum-Well Laser Diodes at Room Temperature

2011 ◽  
Vol 4 (8) ◽  
pp. 082102 ◽  
Author(s):  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Toshifumi Hasama ◽  
Hiroshi Ishikawa ◽  
Sumiko Fujisaki ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Continuous Wave Operation

scholarly journals First demonstration of single-layer InAs/InP (100) quantum-dot laser: continuous wave, room temperature, ground state

2009 ◽  
Vol 45 (25) ◽  
pp. 1317 ◽  
Author(s):  
J. Kotani ◽  
P.J. van Veldhoven ◽  
T. de Vries ◽  
B. Smalbrugge ◽  
E.A.J.M. Bente ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ground State ◽  
Room Temperature ◽  
Continuous Wave ◽  
Single Layer ◽  
Quantum Dot Laser

Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation

1997 ◽  
Vol 70 (20) ◽  
pp. 2753-2755 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multi Quantum Well
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