Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser

2012 ◽  
Vol 48 (11) ◽  
pp. 644 ◽  
Author(s):  
S.M. Chen ◽  
K.J. Zhou ◽  
Z.Y. Zhang ◽  
O. Wada ◽  
D.T.D. Childs ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Room Temperature ◽  
Quantum Dot Laser

scholarly journals First demonstration of single-layer InAs/InP (100) quantum-dot laser: continuous wave, room temperature, ground state

2009 ◽  
Vol 45 (25) ◽  
pp. 1317 ◽  
Author(s):  
J. Kotani ◽  
P.J. van Veldhoven ◽  
T. de Vries ◽  
B. Smalbrugge ◽  
E.A.J.M. Bente ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ground State ◽  
Room Temperature ◽  
Continuous Wave ◽  
Single Layer ◽  
Quantum Dot Laser

scholarly journals Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance

2021 ◽  
Vol 8 ◽  
Author(s):  
Jia-Jian Chen ◽  
Zi-Hao Wang ◽  
Wen-Qi Wei ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Well Lasers ◽  
Laser Source ◽  
Quantum Dot Lasers ◽  
Optical Isolator ◽  
Quantum Dot Laser ◽  
On Chip ◽  
Inas Quantum Dot

A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator.

Simultaneous three-state lasing in quantum dot laser at room temperature

2010 ◽  
Vol 46 (16) ◽  
pp. 1155 ◽  
Author(s):  
Z.Y. Zhang ◽  
Q. Jiang ◽  
R.A. Hogg
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Quantum Dot Laser

Quantum-dot laser with a metal-coated waveguide under continuous-wave operation at room temperature

2009 ◽  
Vol 95 (23) ◽  
pp. 233507 ◽  
Author(s):  
Chien-Yao Lu ◽  
Shu-Wei Chang ◽  
Shang-Hua Yang ◽  
Shun Lien Chuang
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Continuous Wave ◽  
Quantum Dot Laser ◽  
Continuous Wave Operation

Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3-$\mu$m p-Type Modulation-Doped Quantum-Dot Laser

2006 ◽  
Vol 42 (12) ◽  
pp. 1259-1265 ◽  
Author(s):  
Chao-Yuan Jin ◽  
Tom J. Badcock ◽  
Hui-Yun Liu ◽  
Kristian M. Groom ◽  
Richard J. Royce ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Characteristic Temperature ◽  
Quantum Dot Laser ◽  
Negative Characteristic ◽  
P Type
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