Achieving consistency of Young’s modulus determination from nanoscale deformation of low-k films

2009 ◽  
Vol 105 (10) ◽  
pp. 106104 ◽  
Author(s):  
S. Nagao ◽  
M. Fujikane ◽  
N. Tymiak ◽  
R. Nowak
Keyword(s):  
Young’S Modulus ◽  
Young's Modulus ◽  
Low K

Determination of Poisson's Ratio of Thin low-k Films using Bidirectional Thermal Expansion Measurement

2006 ◽  
Vol 914 ◽  
Author(s):  
Jiping Ye ◽  
Satoshi Shimizu ◽  
Shigeo Sato ◽  
Nobuo Kojima ◽  
Junnji Noro
Keyword(s):  
Thermal Expansion ◽  
Temperature Gradient ◽  
Young’S Modulus ◽  
Poisson’S Ratio ◽  
Silicon Oxide ◽  
Young's Modulus ◽  
Polymer Materials ◽  
Poisson's Ratio ◽  
Thermal Expansion Measurement ◽  
Low K

AbstractA recently developed bidirectional thermal expansion measurement (BTEM) method was applied to different types of low-k films to substantiate the reliability of the Poisson's ratio found with this technique and thereby to corroborate its practical utility. In this work, the Poisson's ratio was determined by obtaining the temperature gradient of the biaxial thermal stress from substrate curvature measurements, the temperature gradient of the whole thermal expansion strain along the film thickness from x-ray reflectivity (XRR) measurements, and reduced modulus of the film from nanoindentation measurements. For silicon oxide-based SiOC film having a thickness of 382.5 nm, the Poisson's ratio, Young's modulus and thermal extension coefficient (TEC) were determined to be Vf = 0.26, αf =21 ppm/K and Ef =9,7 GPa. These data are close to the levels of metals and polymers rather than the levels of fused silicon oxide, which is characterized by Vf = 0.17 and Er = 69.6 GPa. The alkyl component in the silicon oxide-based framework is thought to act as an agent in reducing the modulus and elevating the Poisson's ratio in SiOC low-k materials. In the case of an organic polymer SiLK film with a thickness of 501.5 nm, the Poisson's ratio, Young's modulus and TEC were determined to be Vf = 0.39, αf =74 ppm/K and Er =3.1 GPa, which are in the typical range of V= 0.34~0.47 with E =1.0~10 GPa for polymer materials. From the viewpoint of the relationship between the Poisson's ratio and Young's modulus as classified by different material types, the Poisson's ratios found for the silicon oxide-based SiOC and organic SiLK films are reasonable values, thereby confirming that BTEM is a reliable and effective method for evaluating the Poisson's ratio of thin films.

Young’s modulus evaluation by SAWs for porous silica low-k film with cesium doping

2011 ◽  
Vol 88 (5) ◽  
pp. 666-670 ◽  
Author(s):  
X. Xiao ◽  
X.M. Shan ◽  
Y. Kayaba ◽  
K. Kohmura ◽  
H. Tanaka ◽  
...  
Keyword(s):  
Young’S Modulus ◽  
Young's Modulus ◽  
Porous Silica ◽  
Low K

Via Electromigration Lifetime Improvement of Aluminum Dual-Damascene Interconnects by Using Soft Low-k Organic SOG Interlayer Dielectrics

2000 ◽  
Vol 612 ◽  
Author(s):  
Hisashi Kaneko ◽  
Takamasa Usui ◽  
Sachiyo Ito ◽  
Masahiko Hasunuma
Keyword(s):  
Tensile Stress ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Void Nucleation ◽  
Dielectric Materials ◽  
Dual Damascene ◽  
Atom Migration ◽  
Multi Level ◽  
Damascene Interconnects ◽  
Low K

AbstractThe via electromigration(EM) reliability of aluminum(Al) dual-damascene interconnects by using Niobium(Nb) new reflow liner is described. It has been found that the via EM lifetime was improved by introducing low-k organic spin on glass(SOG)-passivated structure than the conventional TEOS-SiO2/SiN-passivated structure. Higher EM activation energy of 1.08 eV was obtained for the SOG-passivated structure than the conventional TEOS-passivated structure of 0.9 eV, even though no significant Al micro-crystal structure difference was found for both structures. It has been turned out that the low-k SOG material has the 1/7 Young's modulus (8 GPa) of TEOS-SiO2 (57 GPa) or thermal SiO2(70 GPa). The small Young's modulus means that SOG is more elastically deformable and/or softer than TEOS or thermal SiO2. This elastic deformation of the low-k SOG could retard the tensile stress evolution due to the Al atom migration near the cathode via, and elongated the time until the Al interconnect tensile stress exceeds the critical stress value for void nucleation. It has been concluded that the small-RC and reliable multi-level Al interconnect can be realized by the Nb-liner reflow-sputtered process with soft and low-k SOG dielectric materials.

Nanoindentation Measurements on Low-k Porous Silica Thin Films Spin Coated on Silicon Substrates

2003 ◽  
Vol 125 (4) ◽  
pp. 361-367 ◽  
Author(s):  
Xiaoqin Huang ◽  
Assimina A. Pelegri
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Young’S Modulus ◽  
Microelectromechanical Systems ◽  
Young's Modulus ◽  
Porous Silica ◽  
Silicon Substrates ◽  
Silica Thin Films ◽  
Low K

MEMS (MicroElectroMechanical Systems) are composed of thin films and composite nanomaterials. Although the mechanical properties of their constituent materials play an important role in controlling their quality, reliability, and lifetime, they are often found to be different from their bulk counterparts. In this paper, low-k porous silica thin films spin coated on silicon substrates are studied. The roughness of spin-on coated porous silica films is analyzed with in-situ imaging and their mechanical properties are determined using nanoindentation. A Berkovich type nanoindenter, of a 142.3 deg total included angle, is used and continuous measurements of force and displacements are acquired. It is shown, that the measured results of hardness and Young’s modulus of these films depend on penetration depth. Furthermore, the film’s mechanical properties are influenced by the properties of the substrate, and the reproduction of the force versus displacement curves depends on the quality of the thin film. The hardness of the studied low-k spin coated silica thin film is measured as 0.35∼0.41 GPa and the Young’s modulus is determined as 2.74∼2.94 GPa.

Evaluation of via density and low-k Young's modulus influence on mechanical performance of advanced node multi-level Back-End-Of-Line

2016 ◽  
Vol 56 ◽  
pp. 93-100 ◽  
Author(s):  
Luka Ključar ◽  
Mario González ◽  
Ingrid De Wolf ◽  
Kristof Croes ◽  
Jürgen Bömmels ◽  
...  
Keyword(s):  
Young’S Modulus ◽  
Mechanical Performance ◽  
Young's Modulus ◽  
Multi Level ◽  
Low K

Advances in metrology for the determination of Young's modulus for low-k dielectric thin films

2012 ◽  
Author(s):  
Sean King ◽  
George A. Antonelli ◽  
Gheorghe Stan ◽  
Robert F. Cook ◽  
R. Sooryakumar
Keyword(s):  
Thin Films ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Dielectric Thin Films ◽  
Low K
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