Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors

2009 ◽  
Vol 105 (8) ◽  
pp. 084502 ◽  
Author(s):  
W. D. Hu ◽  
X. S. Chen ◽  
F. Yin ◽  
J. B. Zhang ◽  
W. Lu
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Two Dimensional ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Transient Simulations ◽  
Drain Lag

scholarly journals Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors

2013 ◽  
Vol 114 (3) ◽  
pp. 033105 ◽  
Author(s):  
N. Nader Esfahani ◽  
R. E. Peale ◽  
W. R. Buchwald ◽  
C. J. Fredricksen ◽  
J. R. Hendrickson ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Two Dimensional ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

2001 ◽  
Vol 37 (10) ◽  
pp. 661 ◽  
Author(s):  
P.B. Klein ◽  
S.C. Binari ◽  
K. Ikossi-Anastasiou ◽  
A.E. Wickenden ◽  
D.D. Koleske ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Current Collapse

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

2003 ◽  
Vol 83 (8) ◽  
pp. 1650-1652 ◽  
Author(s):  
J. A. Mittereder ◽  
S. C. Binari ◽  
P. B. Klein ◽  
J. A. Roussos ◽  
D. S. Katzer ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Bias Stress ◽  
Electron Mobility Transistors ◽  
Current Collapse
Sign in / Sign up

Export Citation Format

Share Document