Enhanced photon-induced carrier density in silicon-on-insulator via surface recombination suppression for increasing plasma dispersion effect

2009 ◽  
Vol 105 (7) ◽  
pp. 074510 ◽  
Author(s):  
Ming-Kai Hsieh ◽  
Kai-Ning Ku ◽  
Ming-Chang M. Lee
Keyword(s):  
Carrier Density ◽  
Surface Recombination ◽  
Silicon On Insulator ◽  
Dispersion Effect ◽  
Recombination Suppression ◽  
Plasma Dispersion

Plasma Dispersion Effect for Various Doping Configuration on the SOI Phase Modulator with Trapezoidal Rib Waveguide

2011 ◽  
Vol 403-408 ◽  
pp. 4403-4407
Author(s):  
B. Mardiana ◽  
A.R. Hanim ◽  
H. Hazura ◽  
S. Shaari ◽  
P. Susthitha Menon ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Silicon On Insulator ◽  
Phase Modulator ◽  
Dispersion Effect ◽  
Optical Mode ◽  
Rib Waveguide ◽  
Optical Wavelength ◽  
Photonic Material ◽  
Section Structure ◽  
Plasma Dispersion

Silicon-on-insulator (SOI) is becoming more attractive as a photonic material for photonic integrated circuits (PLC) because of its unique features. In this paper, we modeled and simulated the performance of the SOI phase modulator with various doping configuration based on the plasma dispersion effect. The effect of the free injected carrier in the region of the propagating optical mode have been investigated at the optical wavelength of 1.55µm. The proposed device have been integrated in the SOI rib waveguide with trapezoidal cross section structure and four different doping configurations have been chosen which are the n+p+n+, p+n+p+, n+n+p+and the p+p+n+. Our results show that the n+n+p+configuration possessed the best modulation efficiency of 0.026V.cm and gained the smallest absorption loss of 1.1dB at 0.95V applied voltage.

A Planar Lightwave Circuit Based on Optical Add-Drop Multiplexer with 16 Tunable Wavelength Channels

2011 ◽  
Vol 216 ◽  
pp. 661-665 ◽  
Author(s):  
Xiao Bo Xing ◽  
Ying Lian Wang
Keyword(s):  
Single Mode ◽  
Grating Period ◽  
Silicon On Insulator ◽  
Etch Depth ◽  
Dispersion Effect ◽  
Channel Spacing ◽  
Bragg Wavelength ◽  
Planar Lightwave Circuit ◽  
Planar Lightwave ◽  
Plasma Dispersion

An electrically controlled optical add-drop multiplexer (OADM) based on silicon on insulator is presented, which possesses 16 tunable add/drop wavelength channel of 100 GHz channel spacing. The OADM is integrated lateral p-i-n diodes with single-mode Mach-Zehnder interferometer filter, which transforms the change of refractive index induced by the plasma dispersion effect into a voltage controlled variation of add/drop wavelength. The 3dB bandwidth of add/drop wavelength is less than 0.8 nm when the etch depth, period, Bragg wavelength and length of Bragg grating are 500 nm, 223 nm, 1548.5 nm and 1000 mm, respectively. When the applied voltage is 1.059~1.2219V, the tunable add/drop wavelength of OADM is between 1547.7 and 1536.5nm. Also, the add/drop wavelength could be controlled precisely by changing the grating period, which can satisfy the requirement of other wavelength range.

Realization of 13.6% Efficiency on 20 μm Thick Si/Organic Hybrid Heterojunction Solar CellsviaAdvanced Nanotexturing and Surface Recombination Suppression

ACS Nano ◽  
2015 ◽  
Vol 9 (6) ◽  
pp. 6522-6531 ◽  
Author(s):  
Jian He ◽  
Pingqi Gao ◽  
Mingdun Liao ◽  
Xi Yang ◽  
Zhiqin Ying ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Recombination Suppression ◽  
Organic Hybrid

Analysis of Silicon-On-Insulator (SOI) Buried Waveguide Phase Modulator

2012 ◽  
Vol 462 ◽  
pp. 532-535
Author(s):  
Abdul Razak Hanim ◽  
Haroon Hazura ◽  
Bidin Mardiana ◽  
Shaari Sahbudin ◽  
P. Susthitha Menon
Keyword(s):  
Refractive Index ◽  
Single Mode ◽  
Free Carrier ◽  
Silicon On Insulator ◽  
Phase Modulator ◽  
Carrier Injection ◽  
Dispersion Effect ◽  
Optical Phase ◽  
Real Refractive Index ◽  
Simulation Package

The analyses of the simulation of a single mode buried waveguide optical phase modulator based on SOI material are here reported. The structure has been simulated by Athena from Silvaco simulation package. The buried waveguide is created by doping phosphorus with concentration of 10e15 cm-3 into the substrate. The real refractive index and the absorption coefficient of the waveguide are changed using the free carrier dispersion effect via carrier injection of a pn junction. The efficiency, VπLπ is calculated and the performance is compared with that of the rib waveguide optical phase modulator of the same material and dimensions. Simulation shows that the device can be an efficient device for application in intensity modulation.

STED like microscopy based on plasma dispersion effect in silicon

2017 ◽  
Author(s):  
Hadar Pinhas ◽  
Yossef Danan ◽  
Moshe Sinvani ◽  
Meir Danino ◽  
Zeev Zalevsky
Keyword(s):  
Dispersion Effect ◽  
Plasma Dispersion
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