Realization of 13.6% Efficiency on 20 μm Thick Si/Organic Hybrid Heterojunction Solar CellsviaAdvanced Nanotexturing and Surface Recombination Suppression

ACS Nano ◽  
2015 ◽  
Vol 9 (6) ◽  
pp. 6522-6531 ◽  
Author(s):  
Jian He ◽  
Pingqi Gao ◽  
Mingdun Liao ◽  
Xi Yang ◽  
Zhiqin Ying ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Recombination Suppression ◽  
Organic Hybrid

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

Analysis of the Bias Dependent Spectral Response of a-SiC:H p-i-n Photodiode

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Louro ◽  
A. Fantoni ◽  
Yu. Vygranenko ◽  
M. Fernandes ◽  
M. Vieira
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Spectral Response ◽  
Surface Recombination ◽  
Electrical Field ◽  
Field Reversal ◽  
Current Voltage ◽  
Voltage Dependent ◽  
And Inversion ◽  
Device Operation

AbstractThe bias voltage dependent spectral response (with and without steady state bias light) and the current voltage dependence has been simulated and compared to experimentally obtained values. Results show that in the heterostructures the bias voltage influences differently the field and the diffusion part of the photocurrent. The interchange between primary and secondary photocurrent (i. e. between generator and load device operation) is explained by the interaction of the field and the diffusion components of the photocurrent. A field reversal that depends on the light bias conditions (wavelength and intensity) explains the photocurrent reversal. The field reversal leads to the collapse of the diode regime (primary photocurrent) launches surface recombination at the p-i and i-n interfaces which is responsible for a double-injection regime (secondary photocurrent). Considerations about conduction band offsets, electrical field profiles and inversion layers will be taken into account to explain the optical and voltage bias dependence of the spectral response.

Inorganic-organic Hybrid Materials for Real 3-D Sub-νm Lithography

2003 ◽  
Vol 780 ◽  
Author(s):  
R. Houbertz ◽  
J. Schulz ◽  
L. Fröhlich ◽  
G. Domann ◽  
M. Popall ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Sol Gel ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Hybrid Polymer ◽  
Organic Hybrid ◽  
Two Photon ◽  
Applied Technology ◽  
Scale Structures ◽  
Sol Gel Synthesis

AbstractReal 3-D sub-νm lithography was performed with two-photon polymerization (2PP) using inorganic-organic hybrid polymer (ORMOCER®) resins. The hybrid polymers were synthesized by hydrolysis/polycondensation reactions (modified sol-gel synthesis) which allows one to tailor their material properties towards the respective applications, i.e., dielectrics, optics or passivation. Due to their photosensitive organic functionalities, ORMOCER®s can be patterned by conventional photo-lithography as well as by femtosecond laser pulses at 780 nm. This results in polymerized (solid) structures where the non-polymerized parts can be removed by conventional developers.ORMOCER® structures as small as 200 nm or even below were generated by 2PP of the resins using femtosecond laser pulses. It is demonstrated that ORMOCER®s have the potential to be used in components or devices built up by nm-scale structures such as, e.g., photonic crystals. Aspects of the materials in conjunction to the applied technology are discussed.

AGENCY OF SURFACE RECOMBINATION ON VOLT-AMPERE CHARACTERISTIC OF THE DIODE WITH DOUBLE INJECTION

2020 ◽  
pp. 70-73
Author(s):  
R. Y. Rasulov ◽  
A. Madgaziev ◽  
U. Rayimjonova ◽  
M. Mamatova
Keyword(s):  
Surface Recombination ◽  
Double Injection
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