scholarly journals 5 MHz 2×2 optical switch in silicon on insulator technology using plasma dispersion effect

2002 ◽  
Author(s):  
P. Dainesi ◽  
L. Thevanaz ◽  
P. Robert
Keyword(s):  
Optical Switch ◽  
Silicon On Insulator ◽  
Dispersion Effect ◽  
Silicon On Insulator Technology ◽  
Plasma Dispersion

Plasma Dispersion Effect for Various Doping Configuration on the SOI Phase Modulator with Trapezoidal Rib Waveguide

2011 ◽  
Vol 403-408 ◽  
pp. 4403-4407
Author(s):  
B. Mardiana ◽  
A.R. Hanim ◽  
H. Hazura ◽  
S. Shaari ◽  
P. Susthitha Menon ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Silicon On Insulator ◽  
Phase Modulator ◽  
Dispersion Effect ◽  
Optical Mode ◽  
Rib Waveguide ◽  
Optical Wavelength ◽  
Photonic Material ◽  
Section Structure ◽  
Plasma Dispersion

Silicon-on-insulator (SOI) is becoming more attractive as a photonic material for photonic integrated circuits (PLC) because of its unique features. In this paper, we modeled and simulated the performance of the SOI phase modulator with various doping configuration based on the plasma dispersion effect. The effect of the free injected carrier in the region of the propagating optical mode have been investigated at the optical wavelength of 1.55µm. The proposed device have been integrated in the SOI rib waveguide with trapezoidal cross section structure and four different doping configurations have been chosen which are the n+p+n+, p+n+p+, n+n+p+and the p+p+n+. Our results show that the n+n+p+configuration possessed the best modulation efficiency of 0.026V.cm and gained the smallest absorption loss of 1.1dB at 0.95V applied voltage.

A Planar Lightwave Circuit Based on Optical Add-Drop Multiplexer with 16 Tunable Wavelength Channels

2011 ◽  
Vol 216 ◽  
pp. 661-665 ◽  
Author(s):  
Xiao Bo Xing ◽  
Ying Lian Wang
Keyword(s):  
Single Mode ◽  
Grating Period ◽  
Silicon On Insulator ◽  
Etch Depth ◽  
Dispersion Effect ◽  
Channel Spacing ◽  
Bragg Wavelength ◽  
Planar Lightwave Circuit ◽  
Planar Lightwave ◽  
Plasma Dispersion

An electrically controlled optical add-drop multiplexer (OADM) based on silicon on insulator is presented, which possesses 16 tunable add/drop wavelength channel of 100 GHz channel spacing. The OADM is integrated lateral p-i-n diodes with single-mode Mach-Zehnder interferometer filter, which transforms the change of refractive index induced by the plasma dispersion effect into a voltage controlled variation of add/drop wavelength. The 3dB bandwidth of add/drop wavelength is less than 0.8 nm when the etch depth, period, Bragg wavelength and length of Bragg grating are 500 nm, 223 nm, 1548.5 nm and 1000 mm, respectively. When the applied voltage is 1.059~1.2219V, the tunable add/drop wavelength of OADM is between 1547.7 and 1536.5nm. Also, the add/drop wavelength could be controlled precisely by changing the grating period, which can satisfy the requirement of other wavelength range.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

Advantages of Faceted P-Raised Source/Drain in Fully Depleted Silicon on Insulator Technology

2018 ◽  
Vol 86 (7) ◽  
pp. 199-206 ◽  
Author(s):  
Ömür Işıl Aydin ◽  
Judson Robert Holt ◽  
Cyrille Le Royer ◽  
Laks Vanamurthy ◽  
Thomas Feudel ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Fully Depleted ◽  
Silicon On Insulator Technology

scholarly journals Indication of the Coronavirus Model Using a Nanowire Biosensor

Proceedings ◽  
2020 ◽  
Vol 60 (1) ◽  
pp. 50
Author(s):  
Vladimir Generalov ◽  
Olga Naumova ◽  
Dmitry Shcherbakov ◽  
Alexander Safatov ◽  
Boris Zaitsev ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Negative Charge ◽  
Positive Charge ◽  
Silicon On Insulator ◽  
Nanowire Surface ◽  
Before And After ◽  
Effect Transistor ◽  
Current Value ◽  
Silicon On Insulator Technology

The presented results indicate virus-like particles of the coronavirus (CVP) using a nanowire (NW) biosensor based on silicon-on-insulator technology. In the experiment, we used suspensions of CVP and of specific antibodies to the virus. Measurements of the current value of the field-effect transistor before and after the introduction of the CVP on the surface of the nanowire were performed. Results showed antibody + CVP complexes on the phase section with the surface of the nanowire modulate the current of the field-effect transistor; CVP has an electrically positive charge on the phase section “nanowire surface-viral suspension»; antibody + CVP complexes have an electrically negative charge on the phase section “nanowire surface-viral suspension”; the sensitivity of the biosensor is made up of 10−18 M; the time display was 200–300 s.

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