scholarly journals Indentation of single-crystal silicon nanolines: Buckling and contact friction at nanoscales

2009 ◽  
Vol 105 (7) ◽  
pp. 073510 ◽  
Author(s):  
Bin Li ◽  
Qiu Zhao ◽  
Huai Huang ◽  
Zhiquan Luo ◽  
Min K. Kang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Contact Friction ◽  
Crystal Silicon ◽  
Silicon Nanolines

scholarly journals Buckling of Single-Crystal Silicon Nanolines under Indentation

2008 ◽  
Vol 2008 ◽  
pp. 1-11 ◽  
Author(s):  
Min K. Kang ◽  
Bin Li ◽  
Paul S. Ho ◽  
Rui Huang
Keyword(s):  
Single Crystal ◽  
Critical Load ◽  
Single Crystal Silicon ◽  
Longitudinal Direction ◽  
Contact Friction ◽  
Buckling Mode ◽  
Crystal Silicon ◽  
Indentation Tests ◽  
Unique Approach ◽  
Silicon Nanolines

Atomic force microscope-(AFM-) based indentation tests were performed to examine mechanical properties of parallel single-crystal silicon nanolines (SiNLs) of sub-100-nm line width, fabricated by a process combining electron-beam lithography and anisotropic wet etching. The SiNLs have straight and nearly atomically flat sidewalls, and the cross section is almost perfectly rectangular with uniform width and height along the longitudinal direction. The measured load-displacement curves from the indentation tests show an instability with large displacement bursts at a critical load ranging from 480 μNto 700 μN. This phenomenon is attributed to a transition of the buckling mode of the SiNLs under indentation. Using a set of finite element models with postbuckling analyses, we analyze the indentation-induced buckling modes and investigate the effects of tip location, contact friction, and substrate deformation on the critical load of mode transition. The results demonstrate a unique approach for the study of nanomaterials and patterned nanostructures via a combination of experiments and modeling.

Fabrication and Characterization of Patterned Single-Crystal Silicon Nanolines

Nano Letters ◽  
2008 ◽  
Vol 8 (1) ◽  
pp. 92-98 ◽  
Author(s):  
Bin Li ◽  
Min K. Kang ◽  
Kuan Lu ◽  
Rui Huang ◽  
Paul S. Ho ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Fabrication And Characterization ◽  
Silicon Nanolines

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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