Room-temperature nonlinear transport phenomena in low-dimensional Ni-Nb-Zr-H glassy alloys and its device

2014 ◽  
Author(s):  
Mikio Fukuhara ◽  
Hajime Yoshida
Keyword(s):  
Room Temperature ◽  
Transport Phenomena ◽  
Nonlinear Transport ◽  
Glassy Alloys ◽  
Low Dimensional

scholarly journals Transforming Pt-SnO2 Nanoparticles into Pt-SnO2 Composite Nanoceramics for Room-Temperature Hydrogen-Sensing Applications

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2123
Author(s):  
Ming Liu ◽  
Caochuang Wang ◽  
Pengcheng Li ◽  
Liang Cheng ◽  
Yongming Hu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Gas Sensing ◽  
Sintering Temperature ◽  
Sno2 Nanoparticles ◽  
Hydrogen Sensing ◽  
Sensing Applications ◽  
Nanostructured Metal Oxides ◽  
Low Dimensional ◽  
Sensing Characteristics ◽  
Nanostructured Metal

Many low-dimensional nanostructured metal oxides (MOXs) with impressive room-temperature gas-sensing characteristics have been synthesized, yet transforming them into relatively robust bulk materials has been quite neglected. Pt-decorated SnO2 nanoparticles with 0.25–2.5 wt% Pt were prepared, and highly attractive room-temperature hydrogen-sensing characteristics were observed for them all through pressing them into pellets. Some pressed pellets were further sintered over a wide temperature range of 600–1200 °C. Though the room-temperature hydrogen-sensing characteristics were greatly degraded in many samples after sintering, those samples with 0.25 wt% Pt and sintered at 800 °C exhibited impressive room-temperature hydrogen-sensing characteristics comparable to those of their counterparts of as-pressed pellets. The variation of room-temperature hydrogen-sensing characteristics among the samples was explained by the facts that the connectivity between SnO2 grains increases with increasing sintering temperature, and Pt promotes oxidation of SnO2 at high temperatures. These results clearly demonstrate that some low-dimensional MOX nanocrystals can be successfully transformed into bulk MOXs with improved robustness and comparable room-temperature gas-sensing characteristics.

scholarly journals Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Spectral Response ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Bandgap Semiconductors ◽  
Low Dimensional

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

A Self-powered and Sensitive Terahertz Photodetection based on PdSe2

2022 ◽  
Author(s):  
Jie Zhou ◽  
Xueyan Wang ◽  
Zhiqingzi Chen ◽  
Libo Zhang ◽  
Chengyu Yao ◽  
...  
Keyword(s):  
Homeland Security ◽  
Room Temperature ◽  
Performance Enhancement ◽  
Rapid Development ◽  
Rapid Response ◽  
Medical Sciences ◽  
Terahertz Detection ◽  
Order Of Magnitude ◽  
Self Powered ◽  
Low Dimensional

Abstract With the rapid development of terahertz technology, terahertz detectors are expected to play a key role in diverse areas such as homeland security and imaging, materials diagnostics, biology and medical sciences, communication. Whereas self-powered, rapid response, and room temperature terahertz photodetectors are confronted with huge challenges. Here, we report a novel rapid response and self-powered terahertz photothermoelectronic (PTE) photodetector based on a low-dimensional material: palladium selenide (PdSe2). An order of magnitude performance enhancement was observed in photodetection based on PdSe2/graphene heterojunction that resulted from the integration of graphene and enhanced the Seebeck effect. Under 0.1 THz and 0.3 THz irradiation, the device displays a stable and repeatable photoresponse at room temperature without bias. Furthermore, rapid rise (5.0 μs) and decay (5.4 μs) times are recorded under 0.1 THz irradiation. Our results demonstrate the promising prospect of the detector based on PdSe2 in terms of air-stable, suitable sensitivity, and speed, which may have great application in terahertz detection.

Substitutional Effects on the Thermoelectric Properties of Transition Metal Pentatellurides

1998 ◽  
Vol 545 ◽  
Author(s):  
R. T. Littleton ◽  
J. W. Kolis ◽  
C. R. Feger ◽  
Terry M. Tritt
Keyword(s):  
Thermoelectric Properties ◽  
Room Temperature ◽  
Parent Compound ◽  
Substantial Reduction ◽  
Large Degree ◽  
Parent Materials ◽  
Se Doping ◽  
Low Dimensional ◽  
Ti Substitution ◽  
Factor Α

AbstractThe thermoelectric properties (resistivity and thermopower) of single crystals of the low-dimensional pentatelluride materials, Hffe5 and ZrTe5, have been measured as a function of temperature from 10K < T < 320K. Both parent materials exhibit a resistive transition peak, Tp ≈ 80K for HfTe5 and Tp ≈ 145K for ZrTe5. Each display a large positive (p-type) thermopower (α ≥ +125μV/K) around room temperature, which undergoes a change to a large negative (n-type) thermopower (α≤-125μV/K) below the peak temperature. The magnitude of this resistive anomaly is typically 3–7 times the room temperature value of ≈ 1 mΩ•cm. Through isoelectronic substitution of Zr for Hf (Hf1-xZrxTe5), a systematic shift is observed in Tp as the Zr concentration increases. Small Ti substitution for Hf and Zr affects the electronic properties strongly, producing a substantial reduction in Tp for either parent compound. However, the large values of thermopower and the magnitude of the resistive peak remain essentially unchanged. Substitutions of Se or Sb on the Te sites greatly affects the electronic behavior of the parent materials. Se doping increases the thermopower values by ≈20% while decreasing the resistivity by as much as 25%. These effects double the power factor, α2σT, of the parent materials. Small Sb substitutions appear to completely suppress the resistive anomaly. These features in the resistivity and thermopower signal a large degree of tunability in the temperature range of operation. The potential of these materials as candidates for low temperature thermoelectric applications will be discussed.

ChemInform Abstract: Room Temperature Light Emission from the Low-Dimensional Semiconductors AZrPS6 (A: K, Rb, Cs).

ChemInform ◽  
2010 ◽  
Vol 41 (27) ◽  
pp. no-no
Author(s):  
Santanu Banerjee ◽  
Jodi M. Szarko ◽  
Benjamin D. Yuhas ◽  
Christos D. Malliakas ◽  
Lin X. Chen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emission ◽  
Low Dimensional

Electrical Transport Properties of the Pentatelluride Materials Hfte5 and Zrte5

1997 ◽  
Vol 478 ◽  
Author(s):  
T. M. Tritt ◽  
M. L. Wilson ◽  
R. L. Littleton ◽  
C. Feger ◽  
J. Kolis ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Electrical Transport ◽  
Entire Range ◽  
Room Temperature ◽  
Polycrystalline Material ◽  
Polycrystalline Materials ◽  
Electrical Transport Properties ◽  
Low Dimensional ◽  
P Type

AbstractWe have measured the resistivity and thermopower of single crystals as well as polycrystalline pressed powders of the low-dimensional pentatelluride materials: HfTe5 and ZrTe5. We have performed these measurements as a function of temperature between 5K and 320K. In the single crystals there is a peak in the resistivity for both materials at a peak temperature, Tp where Tp ≈ 80K for HfTe5 and Tp ≈ 145K for ZrTe5. Both materials exhibit a large p-type thermopower around room temperature which undergoes a change to n-type below the peak. This data is similar to behavior observed previously in these materials. We have also synthesized pressed powders of polycrystalline pentatelluride materials, HfTe5 and ZrTe5. We have measured the resistivity and thermopower of these polycrystalline materials as a function of temperature between 5K and 320K. For the polycrystalline material, the room temperature thermopower for each of these materials is relatively high, +95 μV/K and +65 μV/K for HfTe5 and ZrTe5 respectively. These values compare closely to thermopower values for single crystals of these materials. At 77 K, the thermopower is +55 μV/K for HfTe5 and +35 μV/K for ZrTe5. In fact, the thermopower for the polycrystals decreases monotonically with temperature to T ≈ 5K, thus exhibiting p-type behavior over the entire range of temperature. As expected, the resistivity for the polycrystals is higher than the single crystal material, with values of 430 mΩ-cm and 24 mΩ-cm for Hfre5 and ZrTe5 respectively, compared to single crystal values of 0.35 mΩ-cm (HfTe5) and 1.0 mΩ-cm (ZrTe5). We have found that the peak in the resistivity evident in both single crystal materials is absent in these polycrystalline materials. We will discuss these materials in relation to their potential as candidates for thermoelectric applications.

NOVEL ROOM TEMPERATURE ELECTROCHEMICAL DEPOSITION OF HIGH TEMPERATURE SUPERCONDUCTING FILMS

2004 ◽  
Vol 18 (12n13) ◽  
pp. 505-549 ◽  
Author(s):  
S. H. PAWAR ◽  
P. M. SHIRAGE ◽  
D. D. SHIVAGAN ◽  
A. B. JADHAV
Keyword(s):  
Thin Films ◽  
Electrochemical Deposition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Deposition Process ◽  
Superconducting Films ◽  
Dimensional Structure ◽  
Hetero Structure ◽  
Review Reports ◽  
Low Dimensional

The present review reports the innovative attempts made in the synthesis of a variety of high T c superconductor families in the form of thin films by electrochemical techniques. Summarizing the brief background of electrochemical deposition process, the growth mechanism of high T c superconducting films has been explained. The successful stories of room temperature electrochemical deposition of RE - Ba 2 Cu 3 O 7-δ, Bi – Sr – Ca – CuO , Tl – Ba – Ca – CuO , Hg – Ba – Ca – CuO and MgB2 superconductors in the form of thin films on silver substrates have been summarized. The room temperature electrochemical synthesis technique has helped to form a low-dimensional structure at the interface of Al/Tl-2223 hetero structure, which leads to a pathway for high T c and J c . The photoinduced effects of a variety of heterostructures formed with HTSC systems and CdSe semiconductor are also described.

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