Field effect enhanced quantum dot resonant tunneling diode for high dynamic range light detection

2009 ◽  
Vol 94 (9) ◽  
pp. 093511 ◽  
Author(s):  
W. P. Wang ◽  
Y. Hou ◽  
N. Li ◽  
Z. F. Li ◽  
X. S. Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Resonant Tunneling ◽  
Dynamic Range ◽  
High Dynamic Range ◽  
Resonant Tunneling Diode ◽  
Light Detection ◽  
Tunneling Diode ◽  
High Dynamic

Quantum dot resonant tunneling diode for telecommunication wavelength single photon detection

2007 ◽  
Vol 91 (7) ◽  
pp. 073516 ◽  
Author(s):  
H. W. Li ◽  
B. E. Kardynał ◽  
P. See ◽  
A. J. Shields ◽  
P. Simmonds ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Resonant Tunneling ◽  
Single Photon ◽  
Resonant Tunneling Diode ◽  
Single Photon Detection ◽  
Photon Detection ◽  
Tunneling Diode ◽  
Telecommunication Wavelength

Carrier wave-packet transport under the influence of charged quantum dot in small-area resonant tunneling diode

2008 ◽  
Vol 93 (13) ◽  
pp. 132108 ◽  
Author(s):  
Y. Hou ◽  
W.-P. Wang ◽  
N. Li ◽  
W.-L. Xu ◽  
W. Lu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Wave Packet ◽  
Small Area ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Carrier Wave ◽  
Tunneling Diode

The photocurrent modulation of quantum dot resonant tunneling diode with forward bias voltage

2011 ◽  
Author(s):  
Daming Zhou ◽  
Wangping Wang ◽  
Qianchun Weng ◽  
Ning Li ◽  
Bo Zhang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Bias Voltage ◽  
Resonant Tunneling ◽  
Forward Bias ◽  
Resonant Tunneling Diode ◽  
Forward Bias Voltage ◽  
Tunneling Diode

Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits

1996 ◽  
Vol 39 (10) ◽  
pp. 1449-1455 ◽  
Author(s):  
J.C. Yen ◽  
Q. Zhang ◽  
M.J. Mondry ◽  
P.M. Chavarkar ◽  
E.L. Hu ◽  
...  
Keyword(s):  
Field Effect ◽  
Resonant Tunneling ◽  
Field Effect Transistor ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Transistor Circuits ◽  
Effect Transistor

High Contrast Optically Bistable Optoelectronic Switches Using Strained InGaAs/AlGaAs Material System

1991 ◽  
Vol 240 ◽  
Author(s):  
R. M. Kapre ◽  
Li Chen ◽  
K. Kaviani ◽  
Kezhong Hu ◽  
Ping Chen ◽  
...  
Keyword(s):  
Field Effect ◽  
Resonant Tunneling ◽  
Field Effect Transistor ◽  
Resonant Tunneling Diode ◽  
Material System ◽  
High Contrast ◽  
Tunneling Diode ◽  
Bistable Switching ◽  
Fabry Perot ◽  
Effect Transistor

We report the the first demonstration of optically bistable switching in monolithic opto-electronic transistor configuration using all III-V components. A strained InGaAs/GaAs asymmetric Fabry-Perot (ASFP) modulator / detector, a strained resonant tunneling diode (RTD), and a GaAs based field-effect-transistor (FET) were used in this demonstration.

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