Proton effects on low noise and high responsivity silicon-based photodiodes for space environment

2009 ◽  
Vol 105 (2) ◽  
pp. 024513 ◽  
Author(s):  
Guillaume Pedroza ◽  
Olivier Gilard ◽  
Marie-Lise Bourqui ◽  
Laurent Bechou ◽  
Yannick Deshayes ◽  
...  
Keyword(s):  
Low Noise ◽  
Space Environment ◽  
High Responsivity ◽  
Silicon Based

scholarly journals Modular Design of RF Front End for a Nanosatellite Communication Subsystem Tile Using Low-Cost Commercial Components

2019 ◽  
Vol 2019 ◽  
pp. 1-11 ◽  
Author(s):  
Haider Ali ◽  
Anwar Ali ◽  
M. Rizwan Mughal ◽  
Leonardo Reyneri ◽  
Claudio Sansoe ◽  
...  
Keyword(s):  
Modular Design ◽  
Low Cost ◽  
Ground Plane ◽  
Low Noise ◽  
Space Environment ◽  
Radio Communication ◽  
Matching Network ◽  
Rf Switches ◽  
Front End ◽  
Rf Front End

In recent years, the development market for low-cost nanosatellites has grown considerably. It has been made possible due to the availability of low-cost launch vectors and the use of “commercial off-the-shelf components” (COTS). The satellite design standardization has also helped a great deal to encourage subsystem reuse over a number of space missions. This has created numerous opportunities for small companies and universities to develop their own nanosatellite or satellite subsystems. Most COTS components are usually not space qualified. In order to make them work and withstand the harsh space environment, they need extra effort in circuit redesign and implementation. Also, by adopting the modularity concept and the design reuse method, the overall testing and nonrecurring development cost can be significantly reduced. This can also help minimize the subsystem testing times. The RF front-end design presented in this paper is also considered one of the better and feasible choices based on the above approach. It consists of an S-band transceiver that is fully implemented using COTS components. In the transmit chain, it is comprised of the transmitting CC2510 RF matching network and a power amplifier (PA) with an RF output power of up to 33 dBm which connects to an antenna using two RF switches. The receive chain starts from the antenna that is connected through two RF switches to the low-noise amplifier (LNA) that further connects to the receiving CC2510 via the RF matching network. The receiver sensitivity is -100 dBm. This is a half-duplex system using the same antenna for transmitting and receiving. The receiver and transmitter chains are isolated together using two RF switches which together provide an isolation of up to 90 dB at 2.4 GHz. The concept behind using two RF switches is to provide better isolation from the transmit chain to the LNA. The matching network of CC2510 has been designed in a symmetric fashion to avoid any delays. All the RF COTS used have been selected according to link budget requirements. The LNA, PA, and RF switches were tested individually for compliance. The passive components used in the overall design of the matching network are chosen on the basis of minimum dimension, least parasitic behaviour, and guaranteed optimum RF matching. Also, the RF COTS used are non-CMOS which makes them more robust against space radiations associated with the LEO environment and enables them to provide a radio communication data rate of up to 500 kbps in both uplink and downlink. The vacant spaces on the implemented PCB are shielded with a partial ground plane to avoid RF interference.

scholarly journals Isotopically enhanced triple-quantum-dot qubit

2015 ◽  
Vol 1 (4) ◽  
pp. e1500214 ◽  
Author(s):  
Kevin Eng ◽  
Thaddeus D. Ladd ◽  
Aaron Smith ◽  
Matthew G. Borselli ◽  
Andrey A. Kiselev ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Coherent Control ◽  
Spin Echo ◽  
Pulse Sequences ◽  
Low Noise ◽  
Single Shot ◽  
Spin Qubit ◽  
Echo Type ◽  
Silicon Based ◽  
Long Pulse

Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control of silicon-based devices. A semiconductor spin qubit may be controlled without the use of magnetic fields by using three electrons in three tunnel-coupled quantum dots. Triple dots have previously been implemented in GaAs, but this material suffers from intrinsic nuclear magnetic noise. Reduction of this noise is possible by fabricating devices using isotopically purified silicon. We demonstrate universal coherent control of a triple-quantum-dot qubit implemented in an isotopically enhanced Si/SiGe heterostructure. Composite pulses are used to implement spin-echo type sequences, and differential charge sensing enables single-shot state readout. These experiments demonstrate sufficient control with sufficiently low noise to enable the long pulse sequences required for exchange-only two-qubit logic and randomized benchmarking.

A high responsivity, low-noise germanium bolometer for the far infrared

1976 ◽  
Vol 16 (3) ◽  
pp. 425-428 ◽  
Author(s):  
B.T. Draine ◽  
A.J. Sievers
Keyword(s):  
Far Infrared ◽  
Low Noise ◽  
High Responsivity

scholarly journals High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

2020 ◽  
pp. 16-19
Author(s):  
M. S. Kukurudziak ◽  
O. P. Andreeva ◽  
V. M. Lipka
Keyword(s):  
High Resistance ◽  
High Resistivity ◽  
High Responsivity ◽  
Type Silicon ◽  
Optimal Material ◽  
P Type ◽  
Silicon Based

The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm. The optimal material was selected and the technological modes optimal for solving the set task were established and worked out іn the course of research.

scholarly journals A New Fractal-Based Design of Stacked Integrated Transformers

2008 ◽  
Vol 2008 ◽  
pp. 1-8 ◽  
Author(s):  
Goran Stojanović ◽  
Milan Radovanović ◽  
Vasa Radonić
Keyword(s):  
Integrated Circuits ◽  
Mobile Communications ◽  
Wide Band ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Radio Frequency Integrated Circuits ◽  
Band Frequency ◽  
Electromagnetic Simulations ◽  
On Chip ◽  
Silicon Based

Silicon-based radio-frequency integrated circuits are becoming more and more competitive in wide-band frequency range. An essential component of these ICs is on-chip (integrated) transformer. It is widely used in mobile communications, microwave integrated circuits, low-noise amplifiers, active mixers, and baluns. This paper deals with the design, simulation, and analysis of novel fractal configurations of the primary and secondary coils of the integrated transformers. Integrated stacked transformers, which use fractal curves (Hilbert, Peano, and von Koch) to form the primary and secondary windings, are presented. In this way, the occupied area on the chip is lower and a number of lithographic processes are decreased. The performances of the proposed integrated transformers are investigated with electromagnetic simulations up to 20 GHz. The influence of the order of fractal curves and the width of conductive lines on the inductance and quality factor is also described.

scholarly journals Next-generation infrared focal plane arrays for high-responsivity low-noise applications

2017 ◽  
Author(s):  
M. D. Goldflam ◽  
S. D. Hawkins ◽  
S. Parameswaran ◽  
A. Tauke-Pedretti ◽  
L. K. Warne ◽  
...  
Keyword(s):  
Focal Plane ◽  
Low Noise ◽  
Focal Plane Arrays ◽  
Next Generation ◽  
Infrared Focal Plane Arrays ◽  
High Responsivity

Transmit/Receive (T/R) Modules—Key Elements for Phased Array Antennas

2013 ◽  
Vol 10 (3) ◽  
pp. 116-119 ◽  
Author(s):  
Martin Oppermann ◽  
Joerg Schroth ◽  
Felix Thurow
Keyword(s):  
Heat Sink ◽  
Cost Effective ◽  
Low Noise ◽  
High Yield ◽  
Power Devices ◽  
Active Components ◽  
High Power Amplifier ◽  
Noise Amplifier ◽  
Thermal Simulations ◽  
Silicon Based

Modern active electronically steered antennas (AESA) operate in different platforms and systems. Inside EADS/CASSIDIAN, the focus on X-band antennas today is on airborne and fighter nose radars, in satellite based SAR antennas (synthetic aperture radar) for earth observation, and ground surveillance and security radars. Active antennas are assembled with hundreds or even thousands of transmit/receive modules. This paper will describe an example of a so-called standardized module solution based on LTCC package technology. State-of-the-art modules are assembled with active components such as MMICs realized in GaAs technology, for example, the low noise amplifier (LNA) and the high power amplifier (HPA), silicon based devices, and passives. Assembly technologies are optimized for high yield series production inside CASSIDIAN MicroWave Factory. New semiconductor technologies, such as GaN (gallium nitride) are enablers for a new transmit/receive module generation. GaN/SiC based MMICs with higher power density compared with GaAs-based devices are technological challenges for innovative thermal management solutions and assembly alternatives. GaN power devices are soldered on modern heat sink materials with high thermal conductivity and matched CTE (between the MMIC and the heat sink). The results of thermal simulations comparing different heat sink materials in combination with soldering techniques will be discussed and an optimized solution will be shown. Another type of transmit/receive module technology based on RF-PCB and packaged MMICs will be discussed. Future applications of ground-based security radars, active antenna products with a one-dimensional array, and the need for cost-effective solutions seem to be a good fit for SMD-based products. Different packages, for example, QFN (quad flat pack no lead) and ceramic based (HTCC), mainly for power devices will be shown and compared.

scholarly journals Tailorable Stimulated Brillouin Scattering Laser Based on Silicon Ring Waveguides

2021 ◽  
Vol 9 ◽  
Author(s):  
Yulei Wang ◽  
Kai Li ◽  
Yu Yu ◽  
Sensen Li ◽  
Yunfei Li ◽  
...  
Keyword(s):  
Optical Waveguide ◽  
Moving Boundary ◽  
Acoustic Radiation ◽  
Brillouin Scattering ◽  
Ring Cavity ◽  
Tunable Laser ◽  
Stimulated Brillouin Scattering ◽  
Low Noise ◽  
Stimulated Brillouin ◽  
Silicon Based

Stimulated Brillouin scattering (SBS) lasers based on silicon waveguides with large SBS gain, have been widely used in frequency tunable laser emission, mode-locked pulse laser, low-noise oscillator, optical gyroscope, and other fields. However, current SBS lasers still need long waveguide lengths to realize Brillouin laser output, which increases the waveguide losses and is not conductive to be integrated. In this paper, we propose a silicon ring waveguide, in order to tune the frequency of the phonon field of SBS laser based on the silicon substrate of the ring cavity. The simulation results exhibit that the tailorable forward SBS effect is realized in the silicon-based optical waveguide with a large SBS gain up to 1.90 W-1m-1. Particularly, with the mutual restraint between photoelastic and moving boundary effects, the tunable phonon frequencies emitting from 1 to 15 GHz are realized through the conversion among higher order modes by modifying the widths of the ring cavity. Therefore, this silicon waveguide based on ring cavity will provide a new technical scheme for designing tunable SBS lasers by tuning the ring widths. In addition, this enhanced and broadband acoustic radiation will pave the way for hybrid integration in silicon-based optical waveguide, micro-electromechanical system, and CMOS signal processing technology.

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