scholarly journals A New Fractal-Based Design of Stacked Integrated Transformers

2008 ◽  
Vol 2008 ◽  
pp. 1-8 ◽  
Author(s):  
Goran Stojanović ◽  
Milan Radovanović ◽  
Vasa Radonić

Silicon-based radio-frequency integrated circuits are becoming more and more competitive in wide-band frequency range. An essential component of these ICs is on-chip (integrated) transformer. It is widely used in mobile communications, microwave integrated circuits, low-noise amplifiers, active mixers, and baluns. This paper deals with the design, simulation, and analysis of novel fractal configurations of the primary and secondary coils of the integrated transformers. Integrated stacked transformers, which use fractal curves (Hilbert, Peano, and von Koch) to form the primary and secondary windings, are presented. In this way, the occupied area on the chip is lower and a number of lithographic processes are decreased. The performances of the proposed integrated transformers are investigated with electromagnetic simulations up to 20 GHz. The influence of the order of fractal curves and the width of conductive lines on the inductance and quality factor is also described.

2011 ◽  
Vol 20 (07) ◽  
pp. 1231-1242 ◽  
Author(s):  
J. DEL PINO ◽  
SUNIL L. KHEMCHANDANI ◽  
ROBERTO DÍAZ-ORTEGA ◽  
R. PULIDO ◽  
H. GARCÍA-VÁZQUEZ

In this work, the influence of the inductor quality factor in wide band low noise amplifiers has been studied. Electromagnetic simulations have been used to model the integrated inductor broad band response. The influence of the quality factor on LNA performance of the inductors that compound the impedance matching networks, inductive degeneration and broadband load has been studied, obtaining design guidelines for optimizing the amplifier gain flatness. Using this guidelines, an LNA with wideband input matching, shunt-peaking load, and an output buffer was designed. Using Austria Mikro Systems BiCMOS 0.35 m process, a prototype has been fabricated achieving the following measured specifications: maximum gain of 12.5 dB at 3.4 GHz with a -3 dB bandwidth of 1.7–5.3 GHz, noise figure from 4.3 to 5.2 dB, and unity gain at 9.4 GHz.


2020 ◽  
Vol 2020 (1) ◽  
pp. 000125-000130
Author(s):  
Leo Hu ◽  
Sze Pei Lim

Abstract With the leap into the 5G era, the demand for improvements in the performance of mobile phones is on the rise. This is also true for the quantity of radio frequency (RF) front-end integrated circuits (ICs), especially for RF switches and low noise amplifiers (LNA). It is well-known that improvements in performance depend on the combination of new design, package technology, and choice of materials. Ultra-low residue (ULR) flux is an innovative, truly no-clean, flip-chip bonding material. By using ULR flux, the typical water-wash cleaning process can be removed and, in some instances, package reliability can be improved as well. This simplified assembly process will help to reduce total packaging costs. This paper will discuss the application of ULR fluxes on land grid arrays (LGAs) and quad-flat no-leads/dual-flat no-leads (QFN/DFN) packages for RF front-end ICs, as well as the reflow process. The solder joint strength and reliability study will be shared as well.


Author(s):  
Gianluca Cornetta ◽  
David J. Santos ◽  
José Manuel Vázquez

The modern wireless communication industry is demanding transceivers with a high integration level operating in the gigahertz frequency range. This, in turn, has prompted intense research in the area of monolithic passive devices. Modern fabrication processes now provide the capability to integrate onto a silicon substrate inductors and capacitors, enabling a broad range of new applications. Inductors and capacitors are the core elements of many circuits, including low-noise amplifiers, power amplifiers, baluns, mixers, and oscillators, as well as fully-integrated matching networks. While the behavior and the modeling of integrated capacitors are well understood, the design of an integrated inductor is still a challenging task since its magnetic behavior is hard to predict accurately. As the operating frequency approaches the gigahertz range, device nonlinearities, coupling effects, and skin effect dominate, making difficult the design of critical parameters such as the self-resonant frequency, the quality factor, and self and mutual inductances. However, despite the parasitic effects and the low quality-factor, integrated inductors still allow for the implementation of integrated circuits with improved performances under low supply voltage. In this chapter, the authors review the technology behind monolithic capacitors and inductors on silicon substrate for high-frequency applications, with major emphasis on physical implementation and modeling.


2007 ◽  
Vol 4 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Qing Liu ◽  
Patrick Fay ◽  
Gary H. Bernstein

Quilt Packaging (QP), a novel chip-to-chip communication paradigm for system-in-package integration, is presented. By forming protruding metal nodules along the edges of the chips and interconnecting integrated circuits (ICs) through them, QP offers an approach to ameliorate the I/O speed bottleneck. A fabrication process that includes deep reactive ion etching, electroplating, and chemical-mechanical polishing is demonstrated. As a low-temperature process, it can be easily integrated into a standard IC fabrication process. Three-dimensional electromagnetic simulations of coplanar waveguide QP structures have been performed, and geometries intended to improve impedance matching at the interface between the on-chip interconnects and the chip-to-chip nodule structures were evaluated. Test chips with 100 μm wide nodules were fabricated on silicon substrates, and s-parameters of chip-to-chip interconnects were measured. The insertion loss of the chip-to-chip interconnects was as low as 0.2 dB at 40 GHz. Simulations of 20 μm wide QP structures suggest that the bandwidth of the inter-chip nodules is expected to be above 200 GHz.


1985 ◽  
Vol 63 (6) ◽  
pp. 683-692 ◽  
Author(s):  
H. D. Barber

Silicon bipolar device technologies provided 65% of the world's integrated circuits in 1983. Where low noise, high current, low or high voltage, high speed or low cost are required, bipolar technologies are used. This paper will review the present status of bipolar device technologies, which make possible 100-ps gate-propagation delays, 150-μm2 gate areas, 1-GHz bandwidth amplifiers, on-chip control of over 1-A, 350-V operation, 14-GHz fT's and 10-ns. analogue-to-8-bit digital conversion. These devices are realized because of advances in isolation techniques, chemical-vapor deposition, photolithography, diffusion, ion implantation, conductor–contact interconnection technology, etching processes, and materials preparation. This paper will discuss some of the fundamental problems, modelling difficulties, and technological barriers that will impact the future development of bipolar integrated circuits.


2015 ◽  
Vol 1 (8) ◽  
pp. e1500257 ◽  
Author(s):  
Chuang Zhang ◽  
Chang-Ling Zou ◽  
Yan Zhao ◽  
Chun-Hua Dong ◽  
Cong Wei ◽  
...  

A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.


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