Nonvolatile memory characteristics of thin-film transistors using hybrid gate stack composed of solution-processed indium-zinc-silicon oxide active channel and organic ferroelectric gate insulator
2013 ◽
Vol 31
(4)
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pp. 040601
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2013 ◽
Vol 14
(9)
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pp. 2148-2157
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2010 ◽
Vol 13
(5)
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pp. H141
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2019 ◽
Vol 7
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pp. 453-461
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Keyword(s):
2020 ◽
Vol 9
(2)
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pp. 025002
Keyword(s):
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2011 ◽
Vol 26
(3)
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pp. 034007
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