Improved Re-Crystallization of p[sup +] Poly-Si Gates with Molecular Ion Implantation

2008 ◽  
Author(s):  
Jin-Ku Lee ◽  
Min-Ae Ju ◽  
Jae-Geun Oh ◽  
Sun-Hwan Hwang ◽  
Seung-Joon Jeon ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Molecular Ion

Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A review

2021 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryosuke Okuyama ◽  
Ayumi Onaka-Masada ◽  
Satoshi Shigematsu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Wafer ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors

scholarly journals Proximity gettering technique using CH3O multielement molecular ion implantation for the reduction of the white spot defect density in CMOS image sensor

2019 ◽  
Vol 58 (9) ◽  
pp. 091002
Author(s):  
Ryo Hirose ◽  
Takeshi Kadono ◽  
Ryosuke Okuyama ◽  
Ayumi Onaka-Masada ◽  
Satoshi Shigematsu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Defect Density ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
White Spot ◽  
Molecular Ion

scholarly journals Molecular ion sources for low energy semiconductor ion implantation (invited)

2016 ◽  
Vol 87 (2) ◽  
pp. 02B702 ◽  
Author(s):  
A. Hershcovitch ◽  
V. I. Gushenets ◽  
D. N. Seleznev ◽  
A. S. Bugaev ◽  
S. Dugin ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ion Sources ◽  
Low Energy ◽  
Molecular Ion

Formation of Low Resistive S/D-Extension using Carborane Molecular Ion Implantation for Sub-45-nm PMOSFET

2008 ◽  
Author(s):  
S. Endo ◽  
Y. Kawasaki ◽  
T. Yamashita ◽  
H. Oda ◽  
Y. Inoue
Keyword(s):  
Ion Implantation ◽  
Molecular Ion

Observation of an enhanced gettering effect in silicon under germanium molecular ion implantation

2007 ◽  
Vol 88 (2) ◽  
pp. 397-400 ◽  
Author(s):  
C. David ◽  
B. Sundaravel ◽  
T.R. Ravindran ◽  
K.G.M. Nair ◽  
B.K. Panigrahi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Molecular Ion

Channeling Effect in Boron and Boron Molecular Ion-Implantation

1984 ◽  
Vol 35 ◽  
Author(s):  
N. Delfino ◽  
B.M. Paine
Keyword(s):  
Ion Implantation ◽  
Mass Energy ◽  
Molecular Ion ◽  
Singly Charged ◽  
Channeling Effect ◽  
Charged Ions

ABSTRACTThe extent of boron channeled into interstitial and substitutional sites is measured for singly charged ions of B, BF, BCl, and BF2 implanted into <100> silicon. We find that the most deeply penetrating boron atoms ome to rest in interstiitial sites with the consequence that electrical junctions are always more shallow than etallurgical junctions. This result is essentially independent of ion mass, energy, and fluence.

Transient enhanced diffusion from decaborane molecular ion implantation

1998 ◽  
Vol 73 (14) ◽  
pp. 2015-2017 ◽  
Author(s):  
Aditya Agarwal ◽  
H.-J. Gossmann ◽  
D. C. Jacobson ◽  
D. J. Eaglesham ◽  
M. Sosnowski ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Molecular Ion ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Reflectance of silicon surfaces after high dose rate molecular ion implantation

1981 ◽  
Vol 182-183 ◽  
pp. 595-600 ◽  
Author(s):  
M.O. Lampert ◽  
M. Hage-Ali ◽  
J.C. Muller ◽  
M. Toulemonde ◽  
P. Siffert
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
High Dose Rate ◽  
Silicon Surfaces ◽  
High Dose ◽  
Molecular Ion
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