Channeling Effect in Boron and Boron Molecular Ion-Implantation

1984 ◽  
Vol 35 ◽  
Author(s):  
N. Delfino ◽  
B.M. Paine
Keyword(s):  
Ion Implantation ◽  
Mass Energy ◽  
Molecular Ion ◽  
Singly Charged ◽  
Channeling Effect ◽  
Charged Ions

ABSTRACTThe extent of boron channeled into interstitial and substitutional sites is measured for singly charged ions of B, BF, BCl, and BF2 implanted into <100> silicon. We find that the most deeply penetrating boron atoms ome to rest in interstiitial sites with the consequence that electrical junctions are always more shallow than etallurgical junctions. This result is essentially independent of ion mass, energy, and fluence.

Evidence from SIMS of Doubly-Charged Boron Contamination During Singly Charged-Ion Implantation

1990 ◽  
Vol 48 (2) ◽  
pp. 316-317
Author(s):  
D. S. Simons ◽  
P. H. Chi ◽  
D. B. Novotny
Keyword(s):  
Ion Implantation ◽  
Main Peak ◽  
Charged State ◽  
Exchange Reactions ◽  
Doubly Charged Ions ◽  
Multiply Charged ◽  
Residual Gas ◽  
Singly Charged ◽  
Doubly Charged ◽  
Charged Ions

When a dopant is introduced into a semiconductor material by ion implantation, it is sometimes desirable to accelerate and implant the ion in a multiply-charged state. This has the effect of increasing the energy and range of the ion without increasing the accelerating potential. Most modern ion implanters are of the pre-analysis type. In this design the ions are first accelerated through a modest extraction potential, e.g., 25 keV. This is followed by deflection for mass-to-charge selection in an analyzer magnet, after which the selected ions undergo final acceleration. Charge-exchange reactions between the doubly-charged ions and residual gas have been found to occur between the analyzing magnet and the final acceleration section. These reactions produce singly-charged ions that receive only half of the energy of the doubly-charged ions during final acceleration. For the case of B++ implantation the resulting implant profile shows a shallow-depth shoulder due to B+, the amplitude of which may be greater than 50% of the main peak.

scholarly journals Влияние зарядового состояния ионов ксенона на профиль распределения по глубине при имплантации в кремний

2019 ◽  
Vol 53 (8) ◽  
pp. 1030
Author(s):  
Ю.В. Балакшин ◽  
А.В. Кожемяко ◽  
S. Petrovic ◽  
M. Erich ◽  
А.А. Шемухин ◽  
...  
Keyword(s):  
Single Crystal Silicon ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Multiply Charged Ions ◽  
Crystal Silicon ◽  
Multiply Charged ◽  
Irradiation Energy ◽  
Singly Charged ◽  
Channeling Effect ◽  
Charged Ions

AbstractExperimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (10^14–10^15) ion/cm^2. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.

Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A review

2021 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryosuke Okuyama ◽  
Ayumi Onaka-Masada ◽  
Satoshi Shigematsu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Wafer ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors

Electron Capture, Ionization and Fragmentation in Collisions of Singly Charged Ions with C60

2004 ◽  
Vol 110 ◽  
pp. 325 ◽  
Author(s):  
P. Moretto-Capelle ◽  
A. Rentenier ◽  
D. Bordenave-Montesquieu ◽  
A. Bordenave-Montesquieu
Keyword(s):  
Electron Capture ◽  
Singly Charged ◽  
Charged Ions

Oxide, Hydroxide, and Doubly Charged Analyte Species in Inductively Coupled Plasma/Mass Spectrometry

1986 ◽  
Vol 40 (4) ◽  
pp. 434-445 ◽  
Author(s):  
M. A. Vaughan ◽  
G. Horlick
Keyword(s):  
Mass Spectrometry ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled ◽  
Doubly Charged Ions ◽  
Oxide Hydroxide ◽  
Plasma Mass Spectrometry ◽  
Singly Charged ◽  
Doubly Charged ◽  
Oxide Ions ◽  
Charged Ions

In inductively coupled plasma/mass spectrometry analyte, M may be distributed among several species forms including doubly charged ions (M2+), singly charged ions (M+), mono-oxide ions (MO+), and hydroxide ions (MOH+). Detailed data are presented for Ba to illustrate the dependence of the ion count of these species and their ratios (M2+/M+, MO+/M+, and MOH+/M+) on nebulizer flow rate, plasma power, and sampling depth. Although these data are representative of most elements, many form oxides to a much greater degree than Ba; data are presented for Ti, W, and Ce to illustrate this fact. These various analyte species are important in that serious interelement interferences can occur because of spectral overlap. An extensive pair of tables indicating potential spectral interferences caused by element oxide, hydroxide, and doubly charged ions is presented.

Improved Re-Crystallization of p[sup +] Poly-Si Gates with Molecular Ion Implantation

2008 ◽  
Author(s):  
Jin-Ku Lee ◽  
Min-Ae Ju ◽  
Jae-Geun Oh ◽  
Sun-Hwan Hwang ◽  
Seung-Joon Jeon ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Molecular Ion

scholarly journals Ultrafast Temporal Evolution of Interatomic Coulombic Decay in NeKr Dimers

2022 ◽  
Author(s):  
Florian Trinter ◽  
Tsveta Miteva ◽  
Miriam Weller ◽  
Alexander Hartung ◽  
Martin Richter ◽  
...  
Keyword(s):  
Light Source ◽  
Energy Resolution ◽  
Temporal Evolution ◽  
Synchrotron Light ◽  
Singly Charged ◽  
Charged Ions

We investigate interatomic Coulombic decay in NeKr dimers after neon inner-valence photoionization [Ne+(2s-1)] using a synchrotron light source. We measure with energy resolution the two singly charged ions of the...

Development of compact 2.45 GHz ECR ion source for generation of singly charged ions

2019 ◽  
Vol 14 (01) ◽  
pp. C01009-C01009
Author(s):  
S.L. Bogomolov ◽  
A.E. Bondarchenko ◽  
A.A. Efremov ◽  
Yu.E. Kostyukhov ◽  
K.I. Kuzmenkov ◽  
...  
Keyword(s):  
Ion Source ◽  
Ecr Ion Source ◽  
Singly Charged ◽  
Charged Ions
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