Interfacial Reaction and Electrical Properties of HfO2 Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode

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Hao Wang ◽  
Cong Ye ◽  
Jun Zhang ◽  
Hanbin Wang ◽  
...  
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Florent Bourquard ◽  
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2012 ◽  
Vol 110 (4) ◽  
pp. 863-867 ◽  
Author(s):  
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