Interfacial Reaction and Electrical Properties of HfO2 Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode
2011 ◽
Vol 3
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pp. 3813-3818
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2021 ◽
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2021 ◽
Vol 1095
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pp. 012009
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