Electrical bistable memory device based on a poly(styrene-b-4-vinylpyridine) nanostructured diblock copolymer thin film

2008 ◽  
Vol 93 (20) ◽  
pp. 203303 ◽  
Author(s):  
Ching-Mao Huang ◽  
Yung-Sheng Liu ◽  
Chen-Chia Chen ◽  
Kung-Hwa Wei ◽  
Jeng-Tzong Sheu
2008 ◽  
Author(s):  
Augustin J. Hong ◽  
Kang L. Wang ◽  
Wei Lek Kwan ◽  
Yang Yang ◽  
Dayanara Parra ◽  
...  

2004 ◽  
Vol 3 (12) ◽  
pp. 918-922 ◽  
Author(s):  
Jianyong Ouyang ◽  
Chih-Wei Chu ◽  
Charles R. Szmanda ◽  
Liping Ma ◽  
Yang Yang

2011 ◽  
Vol 257 (18) ◽  
pp. 8093-8101 ◽  
Author(s):  
Yuhu Li ◽  
Haiying Huang ◽  
Tianbai He ◽  
Yumei Gong

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 182
Author(s):  
Iulia Salaoru ◽  
Christos Christodoulos Pantelidis

In this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells. We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and reproducible behavior via current–voltage, endurance, and retention time tests. We ascribe the physical origin of the bipolar switching to the change of the electrical conductivity of PEDOT:PSS due to electrical field induced dipolar reorientation.


2017 ◽  
Vol 38 (13) ◽  
pp. 1600659 ◽  
Author(s):  
Koichiro Beppu ◽  
Yuki Nagashima ◽  
Mituo Hara ◽  
Shusaku Nagano ◽  
Takahiro Seki
Keyword(s):  

2012 ◽  
Vol 24 (1) ◽  
pp. 423-430 ◽  
Author(s):  
Chi-Chang Wu ◽  
Yi-Jen Tsai ◽  
Pin-Lin Liu ◽  
Wen-Luh Yang ◽  
Fu-Hsiang Ko

Small ◽  
2006 ◽  
Vol 2 (3) ◽  
pp. 359-363 ◽  
Author(s):  
Chung-Ping Li ◽  
Siao-Wei Yeh ◽  
Han-Chang Chang ◽  
Jung Y. Huang ◽  
Kung-Hwa Wei

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