scholarly journals Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 182
Author(s):  
Iulia Salaoru ◽  
Christos Christodoulos Pantelidis
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Retention Time ◽  
Memory Device ◽  
Polystyrene Sulfonate ◽  
Physical Origin ◽  
Electrical Field ◽  
Bipolar Switching ◽  
Current Voltage ◽  
Non Volatile Memory

In this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells. We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and reproducible behavior via current–voltage, endurance, and retention time tests. We ascribe the physical origin of the bipolar switching to the change of the electrical conductivity of PEDOT:PSS due to electrical field induced dipolar reorientation.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Programmable polymer thin film and non-volatile memory device

2004 ◽  
Vol 3 (12) ◽  
pp. 918-922 ◽  
Author(s):  
Jianyong Ouyang ◽  
Chih-Wei Chu ◽  
Charles R. Szmanda ◽  
Liping Ma ◽  
Yang Yang
Keyword(s):  
Thin Film ◽  
Memory Device ◽  
Polymer Thin Film ◽  
Non Volatile Memory ◽  
Volatile Memory

Electrically Re-Writable Non-Volatile Memory Device - Using a Blend of Sea Salt and Polymer

2008 ◽  
Vol 54 ◽  
pp. 486-490 ◽  
Author(s):  
Iulia Salaoru ◽  
Shashi Paul
Keyword(s):  
Polyvinyl Acetate ◽  
Organic Molecules ◽  
Memory Device ◽  
Sea Salt ◽  
Nano Particles ◽  
Memory Devices ◽  
Current Voltage ◽  
Non Volatile Memory ◽  
Metal Organic ◽  
Charging Mechanism

Intensive research is currently underway to exploit the highly interesting properties of nano-sized particles and organic molecules for optical, electronic and other applications. Recently, it has been shown that nano-sized particles and small organic molecules embedded in polymer matrices can be used to realise memory devices. Such memory devices are simple to fabricate via the spin-on technique. This work presents an attempt to use sea salt, embedded in polyvinyl acetate, in the making of the memory devices. A polymer blend of polyvinyl acetate and sodium chloride (NaCl) was prepared in methanol and spin coated onto a glass substrate marked with thin Al tracks and a top contact was evaporated onto the blend after drying - this resulted in a metal-organic-metal (MOM) structure. The current-voltage (I-V) behaviour of MOM devices shows that the devices can be switched from a high conductivity state to a low conductivity state, by applying an external electric field - this property can be exploited to store data bits. The possible charging mechanism, based on the electric dipole formation, is presented in this work. Polymer blends of polyvinyl acetate with nano-particles of BaTiO3 are also investigated to further our understanding of charging mechanism(s).

Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8566-8570 ◽  
Author(s):  
Jim-Long Her ◽  
Fa-Hsyang Chen ◽  
Ching-Hung Chen ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Memory Device ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Non Volatile Memory ◽  
Volatile Memory

In this study, we report the structural and electrical characteristics of high-κ Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications.

Graphitic carbon nitride nanosheets for solution processed non-volatile memory devices

2019 ◽  
Vol 7 (33) ◽  
pp. 10203-10210 ◽  
Author(s):  
Ruopeng Wang ◽  
Huilin Li ◽  
Luhong Zhang ◽  
Yu-Jia Zeng ◽  
Ziyu Lv ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Memory Device ◽  
Graphitic Carbon Nitride ◽  
Memory Devices ◽  
Characteristic P ◽  
Switching Characteristic ◽  
Solution Processed ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Carbon Nitride Nanosheets

A memory device is demonstrated based on g-C3N4 nanosheets with a non-volatile behavior and a bipolar switching characteristic.

scholarly journals Electrical conductivity of lithium tantalate thin film

Cerâmica ◽  
2020 ◽  
Vol 66 (379) ◽  
pp. 291-296
Author(s):  
S. I. Gudkov ◽  
A. V. Solnyshkin ◽  
D. A. Kiselev ◽  
A. N. Belov
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Space Charge ◽  
Rf Magnetron Sputtering ◽  
Lithium Tantalate ◽  
Film Structure ◽  
Charge Carriers ◽  
Transport Mechanisms ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract The electrical conductivity of lithium tantalate thin film on the silicon substrate was studied. The film structure was prepared by RF magnetron sputtering. In general, the current-voltage characteristics were asymmetric and similar to that of a diode. The current-voltage characteristics had several sections associated with various transport mechanisms of current carriers. The main conductivity mechanism was related to the space-charge-limited current. The current-voltage characteristics showed that there was a mismatch between the forward and backward runs. One of the reasons for such behavior is a space charge accumulation due to charge carriers which were injected from the electrode and did not relax.

Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films

2008 ◽  
Vol 54 ◽  
pp. 470-473 ◽  
Author(s):  
Hun Jun Ha ◽  
J.M. Lee ◽  
M. Kim ◽  
O.H. Kim
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Electrode Materials ◽  
Memory Device ◽  
Current Level ◽  
Switching Behavior ◽  
Memory Devices ◽  
Carrier Injection ◽  
Bipolar Switching ◽  
Non Volatile Memory

We have studied the effect of various electrodes on non-volatile polymer memory devices. The ITO/PEDOT:PSS/Top electrode (TE) devices had bipolar switching behavior. The OFF current level of devices increased from 3×10-4 A to 3×10-3 A and the ON voltage decreased from 0.8 V to 0.5 V as the TE work function increased. The yield of devices decreased from over 50 % to under 10 % as the TE work function of devices increased. This result occurred because carrier injection was affected by the TE work function.

Sign in / Sign up

Export Citation Format

Share Document