Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

2008 ◽  
Vol 104 (10) ◽  
pp. 104908 ◽  
Author(s):  
K. Kakushima ◽  
K. Okamoto ◽  
K. Tachi ◽  
J. Song ◽  
S. Sato ◽  
...  
Keyword(s):  
High Energy ◽  
Photoemission Spectroscopy ◽  
Band Bending ◽  
X Ray ◽  
Interface Dipole ◽  
High K

Growth of Transition Metal Films on AL(110) Surfaces

1995 ◽  
Vol 399 ◽  
Author(s):  
R.J. Smith ◽  
Adli A. Saleh ◽  
V. Shutthanandan ◽  
N.R. Shivaparan ◽  
V. Krasemann
Keyword(s):  
High Energy ◽  
Metal Films ◽  
Surface Strain ◽  
The Other ◽  
Photoemission Spectroscopy ◽  
Alloy Formation ◽  
Ion Scattering ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Ti Films

ABSTRACTThe growth of thin Pd, Ni, Fe and Ti films on Al(110) surfaces has been studied using high-energy ion scattering (HEIS), x-ray photoemission spectroscopy and photoelectron diffraction techniques. Of these four metals, only Ti grows as an epitaxial overlayer, while the other metals mix with the substrate to form surface alloys. In the HEIS experiments the backscattered ion yield from Al surface atoms is measured as a function of metal coverage on the Al surface. A decrease in the Al scattering is observed for Ti deposition while the other metals result in increased Al scattering, attributed to alloy formation. An explanation for the exceptional growth behavior of Ti on Al is provided using a model of surface strain associated with aluminide formation.

High-energy x-ray-excited valence-electron photoemission spectroscopy ofC2H2andC2D2

1988 ◽  
Vol 37 (12) ◽  
pp. 4730-4733 ◽  
Author(s):  
S. Svensson ◽  
E. Zdansky ◽  
U. Gelius ◽  
H. Ågren
Keyword(s):  
Valence Electron ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Electron Photoemission

SUPERSTRUCTURE FORMATION AND X-RAY PHOTOEMISSION PROPERTIES OF THE TlTiOPO4 SURFACE

2004 ◽  
Vol 11 (02) ◽  
pp. 191-198 ◽  
Author(s):  
V. V. ATUCHIN ◽  
L. D. POKROVSKY ◽  
V. G. KESLER ◽  
N. YU. MAKLAKOVA ◽  
V. I. VORONKOVA ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Electron Diffraction ◽  
Band Structure ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
High Energy Electron ◽  
Valence Band Structure ◽  
X Ray ◽  
Core Level Binding Energy

X-ray photoemission spectroscopy (XPS) measurements have been executed for TlTiOPO 4 to elucidate the general features in the electronic structure of the KTiOPO 4 family compounds. The peculiarities of the valence band structure have been discussed for the crystals. The persistence of core level binding energy differences O 1s–P 2p and O 1s–Ti 2p 3/2 has been detected in TlTiOPO 4 and KTiOPO 4, which relates well with the constancy of averaged P – O and Ti – O chemical bond lengths in this crystal family. The superstructure ordering of the TlTiOPO 4 surface subjected to polishing and annealing has been detected by reflectance high energy electron diffraction (RHEED). From comparison of surface crystallographic properties of TlTiOPO 4 and KTiOPO 4, the most typical superstructure indices have been revealed.

Photoemission Studies of the Ag/InP(110) Interface: Interfacial Reactions and Schottky Barrier Formation

1983 ◽  
Vol 25 ◽  
Author(s):  
W. G. Petro ◽  
T. Kendelewicz ◽  
I. A. Babalola ◽  
I. Lindau ◽  
W. E. Spicer
Keyword(s):  
Valence Band Maximum ◽  
Interfacial Reactions ◽  
Core Level ◽  
Photoemission Spectroscopy ◽  
Band Bending ◽  
X Ray ◽  
Barrier Formation ◽  
Deconvolution Technique ◽  
P Type ◽  
Measurable Change

ABSTRACTRoom-temperature interfacial reactions at the Ag/InP (110) interface have been studied using soft x-ray photoemission spectroscopy of the In 4d and P 2p core levels. For low Ag coverages (less than 1 monolayer (ML)) no measurable change in core level shapes is observed, and the shift in core level position is due solely to band bending. At high Ag coverages (up to 72 ML) we observe dissociated In metal, P atoms near the surface, and Ag clustering. Fermi level movement is deduced from these spectra using a deconvolution technique, and pinning positions of 0.40 ± 0.05 eV below the conduction-band minimum for n-type and 0.5 ± 0.l eV above the valence-band maximum for p-type are found. These positions are in close agreement with calculations of native defect levels.

Interface reaction of poly-Si/high-k insulator systems studied by hard X-ray photoemission spectroscopy

2005 ◽  
Vol 144-147 ◽  
pp. 491-494 ◽  
Author(s):  
E. Ikenaga ◽  
I. Hirosawa ◽  
A. Kitano ◽  
Y. Takata ◽  
A. Muto ◽  
...  
Keyword(s):  
Interface Reaction ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
High K

The Hard X-ray Photoemission Spectroscopy Facility at CLS: performance and first results

2015 ◽  
Vol 93 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Qunfeng Xiao ◽  
Xiaoyu Cui ◽  
Yinbo Shi ◽  
Yongfeng Hu ◽  
Tsun-Kong Sham ◽  
...  
Keyword(s):  
High Energy ◽  
Photoemission Spectroscopy ◽  
Nondestructive Technique ◽  
Bulk Properties ◽  
X Ray ◽  
Probing Depth ◽  
First Results ◽  
Energy Version ◽  
Properties Of Materials ◽  
X Ray Absorption

Photoemission spectroscopy (PES) has been used widely to study the electronic structure of valence and core levels. However, conventional PES is surface-sensitive. To probe the interface and bulk properties of materials, hard X-ray photoemission spectroscopy (HXPES) has received increasing interest in the last decade, because of the deep probing ability of photoelectrons with higher kinetic energies (2–10 keV). Recently, a HXPES system was developed at the Canadian Light Source, using the high-energy version of a R4000 electron analyzer-based spectrometer connected to a medium-energy beamline, the soft X-ray microcharacterization beamline (SXRMB). Excellent performance of the beamline and the spectrometer is demonstrated herein using Au Fermi and 4f core lines; and the controlled probing depth of HXPES at SXRMB is demonstrated by tuning the photon energy (2–9 keV) in the study of a series of SiO2/SiC multilayer samples. Combined with the high-resolution X-ray absorption spectroscopy available at the SXRMB, the HXPES offers a powerful nondestructive technique for studying bulk properties of various materials.

Study of Pd/Y based multilayers using high energy photoemission spectroscopy combined with x-ray standing waves

2017 ◽  
Author(s):  
M.-Y. Wu ◽  
V. Ilakovac ◽  
J.-M. André ◽  
K. Le Guen ◽  
A. Giglia ◽  
...  
Keyword(s):  
Standing Waves ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
X Ray

1sshake-up excitations in Ge andGeO2by high-energy x-ray photoemission spectroscopy

2000 ◽  
Vol 61 (3) ◽  
pp. 1871-1875 ◽  
Author(s):  
Vincenzo Formoso ◽  
Adriano Filipponi ◽  
Andrea Di Cicco ◽  
Gennaro Chiarello ◽  
Roberto Felici ◽  
...  
Keyword(s):  
High Energy ◽  
Photoemission Spectroscopy ◽  
X Ray

New Electronic Properties of Metal / III-V Compound Semiconductor Interfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
L. J. Brillson ◽  
R. E. Viturro ◽  
S. Chang ◽  
J. L. Shaw ◽  
C. Mailhiot ◽  
...  
Keyword(s):  
Compound Semiconductor ◽  
Photoemission Spectroscopy ◽  
Dominant Effect ◽  
Band Bending ◽  
X Ray ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Cathodoluminescence Spectroscopy ◽  
Wide Range ◽  
Spectroscopy Studies

ABSTRACTRecent studies of interface states and band bending at metal / III-V compound semiconductor interfaces reveal that these junctions are much more controllable and predictable than commonly believed. Soft x-ray photoemission spectroscopy studies demonstrate a wide range of band bending for metals on many III-V compounds, including GaAs. Cathodoluminescence spectroscopy measurements show that discrete states form at the microscopic junction which can have a dominant effect on the band bending properties. Internal photoemission measurements confirm the bulk barrier heights inferred by photoemission methods. After separating out surface chemical and bulk crystal quality effects, one finds simple, predictive barrier height variations which follow classical Schottky behavior.

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