scholarly journals Understanding eigenfrequency shifts observed in vortex gyrotropic motions in a magnetic nanodot driven by spin-polarized out-of-plane dc current

2008 ◽  
Vol 93 (18) ◽  
pp. 182508 ◽  
Author(s):  
Youn-Seok Choi ◽  
Sang-Koog Kim ◽  
Ki-Suk Lee ◽  
Young-Sang Yu
Keyword(s):  
Spin Polarized ◽  
Out Of Plane ◽  
Dc Current

Magnetic Domain Imaging of Epitaxial thin Films by Spin-Polarized Scanning Electron Microscopy

1991 ◽  
Vol 231 ◽  
Author(s):  
R. Allenspach ◽  
M. Stampanoni
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Magnetic Domain ◽  
Domain Size ◽  
Epitaxial Thin Films ◽  
Continuous Rotation ◽  
Spin Polarized ◽  
Out Of Plane ◽  
Micrometer Size ◽  
Scanning Electron

AbstractThe formation of magnetic domains in thin epitaxial Co/Au(111) films is investigated by spin-polarized scanning electron microscopy. Three-monolayer films are shown to decay into out-of-plane domains of micrometer size. The transition from out-of-plane to in-plane magnetization at a crossover thickness of 4.5 layers is followed by imaging the domains, and the transition is shown to occur as a continuous rotation of the magnetization. The domain size in field-free-grown perpendicular films depends linearly on film thickness. From high-resolution line scans across magnetization reversals we determine the resolution in magnetic imaging to be better than 40 nm.

Intrinsic Phase Shift and Novel Dynamic Magnetization States of a Spin Torque Oscillator under ac Current Injection

2007 ◽  
Vol 998 ◽  
Author(s):  
Yan Zhou ◽  
Johan Persson ◽  
Johan Akerman
Keyword(s):  
Phase Shift ◽  
Phase Locking ◽  
Wave Length ◽  
Anisotropy Field ◽  
Spin Torque ◽  
Demagnetizing Field ◽  
Oscillation Modes ◽  
Out Of Plane ◽  
Ac Current ◽  
Dc Current

ABSTRACTWe report on a preferred phase shift ΔΦ0 between a spin torque oscillator (STO) and an ac current (Iac) injected at the intrinsic frequency (fSTO) of the STO. In the in-plane precession mode (IP) the STO adjusts to a state where its resistance (or voltage) lags Iac about a quarter of a wave length (ΔΦ0 = 87°−94°). In the IP mode ΔΦ0 increases somewhat with the dc current. As the precession changes into the Out-Of-Plane (OOP) mode, ΔΦ0 jumps by about 180°, i.e. the STO resistance now precedes Iac by about a quarter of a wave length (|ΔΦ0| = 86°). At the IP/OOP boundary, the ac current mixes the two oscillation modes and both periodic and chaotic oscillations are observed. As a consequence of mixing, subharmonic terms appear in the STO signal. ΔΦ0 can furthermore be tuned by changing one or more of the anisotropy field, the demagnetizing field or the applied field. At the IP/OOP boundary, Iac mixes the two oscillation modes. The intrinsic ΔΦ0 will impact any circuit design based on STO technology and will e.g. have direct consequences for phase locking in networks of serially connected STOs.

scholarly journals Highly spin-polarized electronic structure and magnetic properties of Mn2.25Co0.75Al1−xGex Heusler alloys: first-principles calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (38) ◽  
pp. 22556-22569
Author(s):  
Yue Wang ◽  
Liying Wang ◽  
Wenbo Mi
Keyword(s):  
First Principles ◽  
Heusler Alloys ◽  
Lattice Deformation ◽  
First Principles Calculations ◽  
Easy Magnetization ◽  
Magnetization Direction ◽  
Spin Polarized ◽  
Out Of Plane ◽  
Plane Direction ◽  
Easy Magnetization Direction

The complete spin polarizations of Mn2.25Co0.75Al1−xGex are proved to be robust against stoichiometric defect and lattice deformation, whose easy magnetization direction can be manipulated from in-plane direction to out-of-plane one under uniaxial strain.

Faster 360° domain wall motion in nanostrip induced by spin-polarized current with out-of-plane magnetic field

2012 ◽  
Vol 407 (23) ◽  
pp. 4584-4587 ◽  
Author(s):  
Qiyuan Zhu ◽  
Congpu Mu ◽  
Haiyan Xia ◽  
Weiwei Wang ◽  
Jianbo Wang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Domain Wall ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Spin Polarized ◽  
Out Of Plane

scholarly journals Observation of the Magnetization Reorientation in Self-Assembled Metallic Fe-Silicide Nanowires at Room Temperature by Spin-Polarized Scanning Tunneling Spectromicroscopy

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 314
Author(s):  
Ie-Hong Hong ◽  
Sheng-Wen Liu
Keyword(s):  
Room Temperature ◽  
Differential Conductance ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Magnetic Structures ◽  
Spin Polarized ◽  
Out Of Plane ◽  
Magnetic Period ◽  
Self Assembled ◽  
Reduced Density

The quasi-periodic magnetic domains in metallic Fe-silicide nanowires self-assembled on the Si(110)-16 × 2 surface have been observed at room temperature by direct imaging of both the topographic and magnetic structures using spin-polarized scanning tunneling microscopy/spectroscopy. The spin-polarized differential conductance (dI/dV) map of the rectangular-sectional Fe-silicide nanowire with a width and height larger than 36 and 4 nm, respectively, clearly shows an array of almost parallel streak domains that alternate an enhanced (reduced) density of states over in-plane (out-of-plane) magnetized domains with a magnetic period of 5.0 ± 1.0 nm. This heterostructure of magnetic Fe-silicide nanowires epitaxially integrated with the Si(110)-16 × 2 surface will have a significant impact on the development of Si-based spintronic nanodevices.

Nuclear spin polarization by out-of-plane spin injection from ferromagnet into an InAs heterostructure

2012 ◽  
Vol 1396 ◽  
Author(s):  
Tomotsugu Ishikura ◽  
Takahiro Hiraki ◽  
Takashi Matsuda ◽  
Joungeob Lee ◽  
Kanji Yoh
Keyword(s):  
Magnetic Field ◽  
Spin Polarization ◽  
Nuclear Spin ◽  
Spin Injection ◽  
Hall Voltage ◽  
Nuclear Spin Polarization ◽  
Polarized Electrons ◽  
Spin Polarized ◽  
Magnetic Metal ◽  
Out Of Plane

AbstractWe have investigated an InAs channel Hall-bar structure with ferromagnetic spin injector in one of the current terminals. After magnetizing the Fe electrode, spin polarized electrons are injected through the edge of the isolation mesa structure and the anomalous Hall voltage is observed, when electrons are injected from the ferromagnetic terminal. However, when electrons are injected from the non-magnetic metal (Ti/Au) of opposite terminal, the Hall voltage disappeared to the variation error level due to the fabrication imperfections. This result suggests the possibility that out-of-plane spin injection from the channel edge lead to perpendicular nuclear magnetic field. It is presumably caused by nuclear spin polarization in InAs channel near the spin source edge through Overhauser effect. The estimated internal magnetic field was 2000 Gauss.

Enhancing TMR and spin-filtration by using out-of-plane graphene insulating barrier in MTJs

2017 ◽  
Vol 19 (27) ◽  
pp. 17765-17772 ◽  
Author(s):  
Shweta Meena ◽  
Sudhanshu Choudhary
Keyword(s):  
Graphene Sheet ◽  
First Principles ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Half Metallic ◽  
Spin Polarized ◽  
Out Of Plane ◽  
Polarized Transport ◽  
Spin Polarized Transport

First principles investigations are performed to understand the spin-polarized transport in Magnetic Tunnel Junctions (MTJs) consisting of an out-of-plane graphene sheet as a barrier in between two CrO2 Half-Metallic-Ferromagnetic (HMF) electrodes.

scholarly journals Energy-efficient ultrafast nucleation of single and multiple antiferromagnetic skyrmions using in-plane spin polarized current

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Kacho Imtiyaz Ali Khan ◽  
Naveen Sisodia ◽  
P. K. Muduli
Keyword(s):  
Current Density ◽  
Energy Efficient ◽  
Logic Gates ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Nucleation Time ◽  
Spin Polarized ◽  
Out Of Plane ◽  
Order Of Magnitude ◽  
Magnitude Improvement

AbstractWe numerically investigate the ultrafast nucleation of antiferromagnetic (AFM) skyrmion using in-plane spin-polarized current and present its key advantages over out-of-plane spin-polarized current. We show that the threshold current density required for the creation of AFM skyrmion is almost an order of magnitude lower for the in-plane spin-polarized current. The nucleation time for the AFM skyrmion is found to be $$12-7$$ 12 - 7  ps for the corresponding current density of 1–$$3\times 10^{13}~\text{A/m}^{2}$$ 3 × 10 13 A/m 2 . We also demonstrate ultrafast nucleation of multiple AFM skyrmions that is possible only with in-plane spin polarized current and discuss how the current pulse width can be used to control the number of AFM skyrmions. The results show more than one order of magnitude improvement in energy consumption for ultrafast nucleation of AFM skyrmions using in-plane spin-polarized current, which is promising for applications such as logic gates, racetrack memory, and neuromorphic computing.

Sign in / Sign up

Export Citation Format

Share Document