Studies of threshold current dependence on compressive and tensile strain of 630 nm GaInP/AlGaInP multi‐quantum‐well lasers

1994 ◽  
Vol 75 (12) ◽  
pp. 8201-8203 ◽  
Author(s):  
Satoshi Kamiyama ◽  
Masaya Monnoh ◽  
Kiyoshi Ohnaka ◽  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Tensile Strain ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Current Dependence ◽  
Multi Quantum Well

Gain‐ and threshold‐current dependence for multiple‐quantum‐well lasers

1988 ◽  
Vol 64 (11) ◽  
pp. 6564-6567 ◽  
Author(s):  
J. Z. Wilcox ◽  
G. L. Peterson ◽  
S. Ou ◽  
J. J. Yang ◽  
M. Jansen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Current Dependence

Dependence of polarization mode and threshold current on tensile strain in quantum well lasers

1997 ◽  
Vol 41 (4) ◽  
pp. 647-649 ◽  
Author(s):  
Farid Agahi ◽  
Arvind Baliga ◽  
Kei May Lau ◽  
Neal G Anderson
Keyword(s):  
Quantum Well ◽  
Tensile Strain ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Polarization Mode

GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 3 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
A. Rybaltowski ◽  
Xiaolong Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multi Quantum Well ◽  
Metalorganic Chemical

We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

scholarly journals Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers

2017 ◽  
Vol 25 (22) ◽  
pp. 26714 ◽  
Author(s):  
Jialin Jiang ◽  
Junqiang Sun ◽  
Jianfeng Gao ◽  
Ruiwen Zhang
Keyword(s):  
Quantum Well ◽  
Threshold Current ◽  
Quantum Well Lasers

Theoretical Performance of MID-IR Broken-Gap Superlattice Quantum Well Lasers

1996 ◽  
Vol 450 ◽  
Author(s):  
Michael E. Flatté ◽  
C. H. Grein ◽  
J. T. Olesberg ◽  
T. F. Boggess
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Type Ii Superlattice ◽  
Superlattice Structure ◽  
Current Densities ◽  
Semi Empirical ◽  
Broken Gap ◽  
The Ideal

ABSTRACTWe will present calculations of the ideal performance of mid-infrared InAs/InGaSb superlattice quantum well lasers. For these systems several periods of an InAs/InGaSb type-II superlattice are grown in quantum wells. Calculations of the non-radiative and radiative lifetimes of the carriers utilize the full non-parabolic band structure and momentum-dependent matrix elements calculated from a semi-empirical multilayer K · P theory. From these lifetimes, threshold current densities have been evaluated for laser structures. We find serious problems with the hole and electron confinement in the superlattice quantum wells grown to date, and propose a four-layer superlattice structure which corrects these problems.

Room-Temperature AlGaAsSb/InGaAsSb Multi-Quantum-Well Lasers with High Characteristic Temperature

2003 ◽  
Vol 20 (8) ◽  
pp. 1376-1378 ◽  
Author(s):  
Zhang Xiong ◽  
Li Ai-Zhen ◽  
Zheng Yan-Lan ◽  
Xu Gang-Yi ◽  
Qi Ming
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Characteristic Temperature ◽  
Quantum Well Lasers ◽  
Multi Quantum Well
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