Electrical measurements of a VO[sub 2] thin film under high pressure of 25 GPa generated by a load-controllable point-contact structure

2008 ◽  
Vol 104 (7) ◽  
pp. 073703 ◽  
Author(s):  
Joe Sakai
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Contact Structure ◽  
Point Contact ◽  
Electrical Measurements

Fouling Is the Beginning: Upcycling Biopolymer-Fouled Substrates for Fabricating High-Permeance Thin-Film Composite Polyamide Membranes

2020 ◽  
Author(s):  
Ruobin Dai ◽  
Hongyi Han ◽  
Tianlin Wang ◽  
Jiayi Li ◽  
Chuyang Y. Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
End Of Life ◽  
Water Purification ◽  
Low Pressure ◽  
Polymeric Membranes ◽  
Membrane Recycling ◽  
Film Composite ◽  
Thin Film Composite ◽  
First Time

Commercial polymeric membranes are generally recognized to have low sustainability as membranes need to be replaced and abandoned after reaching the end of their life. At present, only techniques for downcycling end-of-life high-pressure membranes are available. For the first time, this study paves the way for upcycling fouled/end-of-life low-pressure membranes to fabricate new high-pressure membranes for water purification, forming a closed eco-loop of membrane recycling with significantly improved sustainability.

Micro-Raman and photoluminescence investigation of ZnxCd1−xSe thin film under high pressure

1998 ◽  
Vol 84 (9) ◽  
pp. 5198-5201 ◽  
Author(s):  
W. S. Li ◽  
Z. X. Shen ◽  
D. Z. Shen ◽  
X. W. Fan
Keyword(s):  
Thin Film ◽  
High Pressure

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

scholarly journals High-Speed Epitaxy Using Supersonic Molecular Jets

1990 ◽  
Vol 201 ◽  
Author(s):  
Djula Eres
Keyword(s):  
Thin Film ◽  
Growth Rates ◽  
High Speed ◽  
Film Growth ◽  
Thin Film Growth ◽  
Free Form ◽  
Electrical Measurements ◽  
Growth Technique ◽  
Pulsed Jets ◽  
Gaseous Source

AbstractThis paper discusses the use of supersonic jets of gaseous source molecules in thin film growth. Molecular jets in free form with no skimmers or collimators in the nozzle-substrate path were used in the investigation of basic film growth processes and in practical film growth applications. The Ge growth rates were found to depend linearly on the digermane jet intensity. Furthermore, the film thickness distributions showed excellent agreement with the distribution of digermane molecules in the jet. High epitaxial Ge growth rates were achieved on GaAs (100) substrates by utilizing high-intensity pulsed jets. The practical advantages and limitations of this film growth technique are evaluated, based on the results of microstructural and electrical measurements of heteroepitaxial Ge films on GaAs (100) substrates.

scholarly journals Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Abd Elouahab Gahtar ◽  
Said Benramache ◽  
Abdelkader Ammari ◽  
Abdelwaheb Boukhachem
Keyword(s):  
Thin Film ◽  
Nickel Sulfide ◽  
Xrd Analysis ◽  
Hexagonal Structure ◽  
Morphological Properties ◽  
Composition Analysis ◽  
Stoichiometric Ratio ◽  
Potential Candidate ◽  
Electrical Measurements ◽  
Average Roughness

Abstract Nickel sulfide (NiS) thin film has been deposited on glass substrates by spray-pyrolysis at 325 ± 5 °C. The precursor aqueous solution was synthetized using hexahydrated nickel nitrates and thiourea. The structural, morphological, optical and electrical properties were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy and four probes electrical measurements. The XRD analysis confirmed the hexagonal structure of NiS thin film, which was found to crystalize along [010] direction with an average crystallites size of 10.5 nm. The lattice parameters are a = b = 3.420 Å and c = 5.300 Å in the space group P63/mmc. The optical properties of the films were investigated through the transmittance and the reflectance measurements. The results revealed that the material exhibits a direct optical band gap of 1.03 eV. The elementary composition analysis confirmed the presence of Ni and S with a stoichiometry ratio (Ni/S) of 1.05. The morphology analysis revealed a homogenous crack-free, compact appearance and a granular surface in all scanned areas. The average roughness of the surface was 6.48 nm. On the other hand, the film exhibits a high electrical conductivity ca. 1.10 × 105 S/cm at room temperature. The above results show that the prepared NiS in this study has a good crystallization, dense morphology, good stoichiometric ratio and high conductivity; therefore, it stands as a potential candidate for application in supercapacitors as an electrode material.

scholarly journals A Manganin Thin Film Ultra-High Pressure Sensor for Microscale Detonation Pressure Measurement

Sensors ◽  
2018 ◽  
Vol 18 (3) ◽  
pp. 736 ◽  
Author(s):  
Guodong Zhang ◽  
Yulong Zhao ◽  
Yun Zhao ◽  
Xinchen Wang ◽  
Xueyong Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Pressure Sensor ◽  
Pressure Measurement ◽  
Detonation Pressure ◽  
Ultra High Pressure

Anomalous Hall Effect of the Co Thin Film Deposited by High-Pressure Magnetron Sputtering

2015 ◽  
Vol 1120-1121 ◽  
pp. 424-428
Author(s):  
C.Y. Zou ◽  
Lai Sen Wang ◽  
Xiang Liu ◽  
Q.F. Zhang ◽  
Jun Bao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Magnetron Sputtering ◽  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect ◽  
Scaling Relation ◽  
Strong Disorder ◽  
Region Temperature ◽  
Localization Region

In this paper, we studied the dependence of temperature and weak localization (WL) effect on the anomalous Hall effect (AHE) in strong disordered and poorly crystallized metal Co thin film deposited by high-pressure magnetron sputtering. The temperature coefficients of resistivity is positive at high temperatures and becomes negative at low temperatures, which is the typical characteristic of weak localization effect in dirty metal regime due to the strong disorder. The saturation anomalous Hall resistivity (ρAxy) have no scaling relation between ρxy and ρxx in weak localization region with temperature below 50 K. In metal region, temperature ranged from 50 K to 300 K, the relation between ρAxy and ρxxis ρAxy=A+bρ2xx, which indicates that the AHE in this Co thin film is scattering-independence at high temperature. The results also shows that the WL effect have a significant impact on the AHE of the Co thin film at low temperature.

Characteristics of Nb Thin-Film Point-Contact Josephson Junctions

1984 ◽  
Vol 23 (Part 1, No. 5) ◽  
pp. 570-574
Author(s):  
Seiichi Naito ◽  
Yasushi Higashino
Keyword(s):  
Thin Film ◽  
Josephson Junctions ◽  
Point Contact
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