Raman and photoluminescence properties of highly Cu doped ZnO nanowires fabricated by vapor-liquid-solid process

2008 ◽  
Vol 129 (12) ◽  
pp. 124713 ◽  
Author(s):  
Huichao Zhu ◽  
Javed Iqbal ◽  
Hongjun Xu ◽  
Dapeng Yu
Keyword(s):  
Zno Nanowires ◽  
Photoluminescence Properties ◽  
Vapor Liquid Solid ◽  
Doped Zno ◽  
Vapor Liquid

Polarity Control in Growing Highly Ga-Doped ZnO Nanowires with the Vapor–Liquid–Solid Process

2018 ◽  
Vol 10 (47) ◽  
pp. 40764-40772 ◽  
Author(s):  
Yu-Feng Yao ◽  
Keng-Ping Chou ◽  
Huang-Hui Lin ◽  
Chi-Chung Chen ◽  
Yean-Woei Kiang ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Doped Zno ◽  
Vapor Liquid

Self-Catalysed Vapor-Liquid-Solid Growth Mechanism of ZnO Nanowires Grown on Silicon Substrate Pre-Coated with ZnO Buffer Layer

2020 ◽  
Vol 307 ◽  
pp. 64-69
Author(s):  
Naziha Jamaludin ◽  
Samsudi Sakrani ◽  
Kashif Tufail Chaudhary ◽  
Jalil Ali ◽  
Fairuz Diyana Ismail
Keyword(s):  
Electron Microscopy ◽  
Buffer Layer ◽  
Growth Mechanism ◽  
Silicon Substrate ◽  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Zno Buffer Layer ◽  
Vapor Liquid

The present article reports the growth mechanism of zinc oxide (ZnO) nanowires grown on silicon substrate pre-coated with ZnO buffer layer by thermal evaporation method. ZnO nanowires are grown for different growth time of 0, 30, 90 and 120 mins with controlled supply of Ar and O2 gas at 650 °C. The structural, morphological and crystallinity properties of ZnO nanowires are analyzed by field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) spectroscopy, high resolution transmission electron microscopy (HRTEM), and X-ray diffraction (XRD). FESEM images infers that, the nanowires growth is driven by self-catalysed vapor-liquid-solid mechanism, where the buffer layer serve as nucleation site. EDX spectra show the uniform composition and purity of ZnO nanowires. A strong (002) peak is detected in XRD spectra which indicates that the preferred growth orientation of the nanowires is toward the c-axis with a hexagonal wurtzite structure. The HRTEM microscopic graphs confirm the growth of nanowire along the preferred [0001] axis. Based on the analysis of grown ZnO nanowires, the probable growth mechanism is schematically presented.

Growth Mechanism of Au-Catalyzed Zno Nanowires: VLS or VS-VLS?

2011 ◽  
Vol 364 ◽  
pp. 333-337 ◽  
Author(s):  
Swee Yong Pung ◽  
Chee Chee Tee ◽  
Kwang Leong Choy ◽  
Xiang Hui Hou
Keyword(s):  
Growth Mechanism ◽  
Process Parameters ◽  
Systematic Study ◽  
Tip Growth ◽  
Zno Nanowires ◽  
Process Window ◽  
Vapor Liquid Solid ◽  
Vs Mechanism ◽  
Vapor Liquid

A systematic study was carried out to study the effect of process parameters on the growth of Au-catalyzed ZnO nanowires (NWs). Growth of Au-catalyzed ZnO NWs could be mainly occurred at the tip or at the base of NWs. This study provided useful information in determining the process window for the tip-growth Au-catalyzed ZnO NWs. Besides, a generic growth mechanism, i.e. a combination of Vapor-Liquid-Solid and Vapor-Solid (VLS and VS) mechanism is proposed to explain the tip-growth and base-growth Au-catalyzed ZnO NWs.

scholarly journals PHOTOLUMINESCENCE OF ZnO NANOSTRUCTURE PREPARED BY CATALYST - ASSISTED VAPOR - LIQUID - SOLID TECHNIQUE

2017 ◽  
Vol 24 (1&2) ◽  
pp. 131-137
Author(s):  
Tran Thi Quynh Hoa ◽  
Ta Dinh Canh ◽  
Nguyen Ngoc Long ◽  
Nguyen Viet Tuyen ◽  
Nguyen Duy Phuong
Keyword(s):  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Sem Images ◽  
Wurtzite Phase ◽  
Zno Nanostructure ◽  
Si Substrates ◽  
Vapor Liquid Solid Mechanism ◽  
Chemical Purity ◽  
Zno Semiconductor ◽  
Vapor Liquid

ZnO semiconductor nanostructures have been synthesized by thermal evaporation of mixture of ZnO and graphite powders. The thin layer of gold coated on Si substrates was used as a catalyst. The structure analysis shows high crystallinity of ZnO, their preferred orientation along the (0 02) plane of the wurtzite phase and their chemical purity. The scanning electron microscopy (SEM) images of products indicate that ZnO nanowires have a diameter of about 40 - 150 nm and a length of up to tens of micrometers. The morphology and structure of ZnO nanowires and nanorods depend on the thicknesses of the Au layers. The fact that Au nanoparticles are located at the tips of the nanowires represents a strong evidence for a growth process dominated by the vapor - liquid - solid mechanism. The low temperature photoluminescence spectra of the ZnO nanowires indicate a group of the ultraviolet narrow peaks and a blue - green very broad peak at 500 nm. 

Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor–liquid–solid process

2003 ◽  
Vol 247 (3-4) ◽  
pp. 357-362 ◽  
Author(s):  
Seu Yi Li ◽  
Chia Ying Lee ◽  
Tseung Yuen Tseng
Keyword(s):  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Vapor Liquid

scholarly journals Structural and Photoluminescence Properties of ZnO Nanowires

2012 ◽  
Vol 57 (12) ◽  
pp. 1239
Author(s):  
G.Yu. Rudko ◽  
I.V. Dubrovin ◽  
A.I. Klimovskaya ◽  
E.G. Gule ◽  
P.M. Lytvyn ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Intensity Ratio ◽  
Growth Conditions ◽  
Zno Nanowires ◽  
Band Edge ◽  
Near Band Edge ◽  
Edge Region ◽  
Photoluminescence Properties ◽  
Vapor Liquid Solid ◽  
Evaporation Temperature

Arrays of ZnO nanowires are grown by the vapor-liquid-solid method on a silicon substrate. The results of XRD, SEM, and AFM studies show that the diameters of nanowires vary in the range (50–300) nm, and their length is up to 40 μm. The wires exhibit bright photoluminescence: the band corresponding to the near band edge region and one or two (depending on the growth conditions) defect-related bands. The intensity ratio of the bands reflects the non-stoichiometry of the material and can be controlled by the zinc evaporation temperature and the temperature in the growing zone.

scholarly journals Using Different Ions in the Hydrothermal Method to Enhance the Photoluminescence Properties of Synthesized ZnO-Based Nanowires

Electronics ◽  
2019 ◽  
Vol 8 (4) ◽  
pp. 446 ◽  
Author(s):  
Ya-Fen Wei ◽  
Wen-Yaw Chung ◽  
Cheng-Fu Yang ◽  
Jei-Ru Shen ◽  
Chih-Cheng Chen
Keyword(s):  
Hydrothermal Process ◽  
Zno Nanowires ◽  
Zno Films ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Surface Morphologies ◽  
The Eu

ZnO films with a thickness of ~200 nm were deposited on SiO2/Si substrates as the seed layer. Then Zn(NO3)2-6H2O and C6H12N4 containing different concentrations of Eu(NO3)2-6H2O or In(NO3)2-6H2O were used as precursors, and a hydrothermal process was used to synthesize pure ZnO as well as Eu-doped and In-doped ZnO nanowires at different synthesis temperatures. X-ray diffraction (XRD) was used to analyze the crystallization properties of the pure ZnO and the Eu-doped and In-doped ZnO nanowires, and field emission scanning electronic microscopy (FESEM) was used to analyze their surface morphologies. The important novelty in our approach is that the ZnO-based nanowires with different concentrations of Eu3+ and In3+ ions could be easily synthesized using a hydrothermal process. In addition, the effect of different concentrations of Eu3+ and In3+ ions on the physical and optical properties of ZnO-based nanowires was well investigated. FESEM observations found that the undoped ZnO nanowires could be grown at 100 °C. The third novelty is that we could synthesize the Eu-doped and In-doped ZnO nanowires at temperatures lower than 100 °C. The temperatures required to grow the Eu-doped and In-doped ZnO nanowires decreased with increasing concentrations of Eu3+ and In3+ ions. XRD patterns showed that with the addition of Eu3+ (In3+), the diffraction intensity of the (002) peak slightly increased with the concentration of Eu3+ (In3+) ions and reached a maximum at 3 (0.4) at%. We show that the concentrations of Eu3+ and In3+ ions have considerable effects on the synthesis temperatures and photoluminescence properties of Eu3+-doped and In3+-doped ZnO nanowires.

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