scholarly journals PHOTOLUMINESCENCE OF ZnO NANOSTRUCTURE PREPARED BY CATALYST - ASSISTED VAPOR - LIQUID - SOLID TECHNIQUE

2017 ◽  
Vol 24 (1&2) ◽  
pp. 131-137
Author(s):  
Tran Thi Quynh Hoa ◽  
Ta Dinh Canh ◽  
Nguyen Ngoc Long ◽  
Nguyen Viet Tuyen ◽  
Nguyen Duy Phuong

ZnO semiconductor nanostructures have been synthesized by thermal evaporation of mixture of ZnO and graphite powders. The thin layer of gold coated on Si substrates was used as a catalyst. The structure analysis shows high crystallinity of ZnO, their preferred orientation along the (0 02) plane of the wurtzite phase and their chemical purity. The scanning electron microscopy (SEM) images of products indicate that ZnO nanowires have a diameter of about 40 - 150 nm and a length of up to tens of micrometers. The morphology and structure of ZnO nanowires and nanorods depend on the thicknesses of the Au layers. The fact that Au nanoparticles are located at the tips of the nanowires represents a strong evidence for a growth process dominated by the vapor - liquid - solid mechanism. The low temperature photoluminescence spectra of the ZnO nanowires indicate a group of the ultraviolet narrow peaks and a blue - green very broad peak at 500 nm. 

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.


2018 ◽  
Vol 10 (47) ◽  
pp. 40764-40772 ◽  
Author(s):  
Yu-Feng Yao ◽  
Keng-Ping Chou ◽  
Huang-Hui Lin ◽  
Chi-Chung Chen ◽  
Yean-Woei Kiang ◽  
...  

2022 ◽  
Author(s):  
Nikolaos Kelaidis ◽  
Matthew Zervos ◽  
Nektarios Lathiotakis ◽  
Alexander Chroneos ◽  
Eugenia Tanasă ◽  
...  

PbO nanowires have been obtained via a self-catalyzed, vapor-liquid-solid mechanism and the reaction of Pb with O2 between 200°C and 300°C at 10 Pa. These had the form of tapes...


Author(s):  
Alla Nastovjak ◽  
David Shterental ◽  
Nataliya Shwartz

The results of the simulation of the GaAs nanowire self-catalyzed growth via vapor-liquid-solid mechanism using various pulse modes are presented in this work.


1998 ◽  
Vol 547 ◽  
Author(s):  
Ying Dai ◽  
Ce-Wen Nan

AbstractAluminum nitride whiskers were synthesized by nitridation of commercial aluminum powder at 1623K in a nitrogen atmosphere. The starting materials consisted of aluminum and carbon black. The carbon acted as a barrier between aluminum powders during nitridation and was removed by heating in air at 923K. The whiskers were about 0.5-1μm in diameter and 10-20μm in length. The droplets at the whisker tips showed that the whiskers grew via a vapor-liquid-solid mechanism. The morphologies of the whiskers were studied by means of SEM and TEM. The formation of the whiskers depended on the processing conditions.


2011 ◽  
Vol 11 (6) ◽  
pp. 2177-2182 ◽  
Author(s):  
J. Lorenzzi ◽  
M. Lazar ◽  
D. Tournier ◽  
N. Jegenyes ◽  
D. Carole ◽  
...  

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