Polarity Control in Growing Highly Ga-Doped ZnO Nanowires with the Vapor–Liquid–Solid Process

2018 ◽  
Vol 10 (47) ◽  
pp. 40764-40772 ◽  
Author(s):  
Yu-Feng Yao ◽  
Keng-Ping Chou ◽  
Huang-Hui Lin ◽  
Chi-Chung Chen ◽  
Yean-Woei Kiang ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Doped Zno ◽  
Vapor Liquid

Self-Catalysed Vapor-Liquid-Solid Growth Mechanism of ZnO Nanowires Grown on Silicon Substrate Pre-Coated with ZnO Buffer Layer

2020 ◽  
Vol 307 ◽  
pp. 64-69
Author(s):  
Naziha Jamaludin ◽  
Samsudi Sakrani ◽  
Kashif Tufail Chaudhary ◽  
Jalil Ali ◽  
Fairuz Diyana Ismail
Keyword(s):  
Electron Microscopy ◽  
Buffer Layer ◽  
Growth Mechanism ◽  
Silicon Substrate ◽  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Zno Buffer Layer ◽  
Vapor Liquid

The present article reports the growth mechanism of zinc oxide (ZnO) nanowires grown on silicon substrate pre-coated with ZnO buffer layer by thermal evaporation method. ZnO nanowires are grown for different growth time of 0, 30, 90 and 120 mins with controlled supply of Ar and O2 gas at 650 °C. The structural, morphological and crystallinity properties of ZnO nanowires are analyzed by field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) spectroscopy, high resolution transmission electron microscopy (HRTEM), and X-ray diffraction (XRD). FESEM images infers that, the nanowires growth is driven by self-catalysed vapor-liquid-solid mechanism, where the buffer layer serve as nucleation site. EDX spectra show the uniform composition and purity of ZnO nanowires. A strong (002) peak is detected in XRD spectra which indicates that the preferred growth orientation of the nanowires is toward the c-axis with a hexagonal wurtzite structure. The HRTEM microscopic graphs confirm the growth of nanowire along the preferred [0001] axis. Based on the analysis of grown ZnO nanowires, the probable growth mechanism is schematically presented.

Growth Mechanism of Au-Catalyzed Zno Nanowires: VLS or VS-VLS?

2011 ◽  
Vol 364 ◽  
pp. 333-337 ◽  
Author(s):  
Swee Yong Pung ◽  
Chee Chee Tee ◽  
Kwang Leong Choy ◽  
Xiang Hui Hou
Keyword(s):  
Growth Mechanism ◽  
Process Parameters ◽  
Systematic Study ◽  
Tip Growth ◽  
Zno Nanowires ◽  
Process Window ◽  
Vapor Liquid Solid ◽  
Vs Mechanism ◽  
Vapor Liquid

A systematic study was carried out to study the effect of process parameters on the growth of Au-catalyzed ZnO nanowires (NWs). Growth of Au-catalyzed ZnO NWs could be mainly occurred at the tip or at the base of NWs. This study provided useful information in determining the process window for the tip-growth Au-catalyzed ZnO NWs. Besides, a generic growth mechanism, i.e. a combination of Vapor-Liquid-Solid and Vapor-Solid (VLS and VS) mechanism is proposed to explain the tip-growth and base-growth Au-catalyzed ZnO NWs.

scholarly journals PHOTOLUMINESCENCE OF ZnO NANOSTRUCTURE PREPARED BY CATALYST - ASSISTED VAPOR - LIQUID - SOLID TECHNIQUE

2017 ◽  
Vol 24 (1&2) ◽  
pp. 131-137
Author(s):  
Tran Thi Quynh Hoa ◽  
Ta Dinh Canh ◽  
Nguyen Ngoc Long ◽  
Nguyen Viet Tuyen ◽  
Nguyen Duy Phuong
Keyword(s):  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Sem Images ◽  
Wurtzite Phase ◽  
Zno Nanostructure ◽  
Si Substrates ◽  
Vapor Liquid Solid Mechanism ◽  
Chemical Purity ◽  
Zno Semiconductor ◽  
Vapor Liquid

ZnO semiconductor nanostructures have been synthesized by thermal evaporation of mixture of ZnO and graphite powders. The thin layer of gold coated on Si substrates was used as a catalyst. The structure analysis shows high crystallinity of ZnO, their preferred orientation along the (0 02) plane of the wurtzite phase and their chemical purity. The scanning electron microscopy (SEM) images of products indicate that ZnO nanowires have a diameter of about 40 - 150 nm and a length of up to tens of micrometers. The morphology and structure of ZnO nanowires and nanorods depend on the thicknesses of the Au layers. The fact that Au nanoparticles are located at the tips of the nanowires represents a strong evidence for a growth process dominated by the vapor - liquid - solid mechanism. The low temperature photoluminescence spectra of the ZnO nanowires indicate a group of the ultraviolet narrow peaks and a blue - green very broad peak at 500 nm. 

Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor–liquid–solid process

2003 ◽  
Vol 247 (3-4) ◽  
pp. 357-362 ◽  
Author(s):  
Seu Yi Li ◽  
Chia Ying Lee ◽  
Tseung Yuen Tseng
Keyword(s):  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Vapor Liquid

Photoluminescence and Raman analysis of ZnO nanowires deposited on Si(100) via vapor–liquid–solid process

2008 ◽  
Vol 40 (4) ◽  
pp. 920-923 ◽  
Author(s):  
Li-li Yang ◽  
Jing-hai Yang ◽  
Dan-dan Wang ◽  
Yong-jun Zhang ◽  
Ya-xin Wang ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Raman Analysis ◽  
Vapor Liquid

Effects of supply time of Ar gas current on structural properties of Au-catalyzed ZnO nanowires on silicon (100) grown by vapor–liquid–solid process

2008 ◽  
Vol 450 (1-2) ◽  
pp. 508-511 ◽  
Author(s):  
Jinghai Yang ◽  
Dandan Wang ◽  
Lili Yang ◽  
Yongjun Zhang ◽  
Guozhong Xing ◽  
...  
Keyword(s):  
Structural Properties ◽  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Ar Gas ◽  
Supply Time ◽  
Vapor Liquid

Anharmonic phonon coupling in vapor-liquid-solid grown ZnO nanowires

2009 ◽  
Vol 95 (19) ◽  
pp. 193111 ◽  
Author(s):  
A. Soudi ◽  
R. Lopez ◽  
R. D. Dawson ◽  
Y. Gu
Keyword(s):  
Zno Nanowires ◽  
Phonon Coupling ◽  
Vapor Liquid Solid ◽  
Vapor Liquid

VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata
Keyword(s):  
High Pressure ◽  
Growth Condition ◽  
Growth Mechanism ◽  
Quantum Confinement ◽  
Critical Value ◽  
Extended Defects ◽  
Vapor Liquid Solid ◽  
Minimum Diameter ◽  
Vls Growth ◽  
Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

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