Influence of applied electric fields on the absorption coefficient and subband energy distances of intersubband transitions in AlN/GaN coupled double quantum wells

2008 ◽  
Vol 104 (6) ◽  
pp. 063114 ◽  
Author(s):  
L. B. Cen ◽  
B. Shen ◽  
Z. X. Qin ◽  
G. Y. Zhang
1994 ◽  
Vol 49 (8) ◽  
pp. 5434-5437 ◽  
Author(s):  
Shi-rong Jin ◽  
Zhong-ying Xu ◽  
Jin-sheng Luo

2007 ◽  
Vol 101 (12) ◽  
pp. 123108 ◽  
Author(s):  
S. Y. Lei ◽  
B. Shen ◽  
L. Cao ◽  
Z. J. Yang ◽  
G. Y. Zhang

1987 ◽  
Vol 102 ◽  
Author(s):  
Y. J. Chen ◽  
Emil S. Koteles ◽  
B. Elman ◽  
C. A. Armiento

ABSTRACTWe present a detailed experimental study of the influence of electric fields on exciton states in a GaAs/AlGaAs coupled double quantum well structure and discuss the advantages of using this novel structure. The coupling of electronic states in the two quantum wells, due to the narrowness of the barrier between them, leads to an enhancement of the quantum-confined Stark effect (by as much as five times that of the single quantum well case). From the measured energies of the exciton transitions, splittings of the levels in a coupled double quantum well structure were derived without recourse to a theoretical model.


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