scholarly journals Dependence of spectral behavior in an InGaN/GaN quantum-well light-emitting diode on the prestrained barrier thickness

2008 ◽  
Vol 104 (4) ◽  
pp. 043108 ◽  
Author(s):  
Chih-Feng Lu ◽  
Chi-Feng Huang ◽  
Yung-Sheng Chen ◽  
C. C. Yang
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Barrier Thickness ◽  
Light Emitting ◽  
Spectral Behavior

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array

2013 ◽  
Vol 38 (17) ◽  
pp. 3370 ◽  
Author(s):  
Horng-Shyang Chen ◽  
Yu-Feng Yao ◽  
Che-Hao Liao ◽  
Charng-Gan Tu ◽  
Chia-Ying Su ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Diode Array ◽  
Light Emitting ◽  
Patterned Growth

The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance

2021 ◽  
Vol 121 ◽  
pp. 105431
Author(s):  
Hayatun Najihah Hussin ◽  
Noor Azrina Talik ◽  
Mohd Nazri Abd Rahman ◽  
Mohd Raqif Mahat ◽  
Prabakaran Poopalan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Regime Transition ◽  
Light Emitting ◽  
Growth Regime ◽  
Multi Quantum Well

Optically-coupled mirror-quantum well InGaAs-GaAs light emitting diode

1990 ◽  
Vol 26 (20) ◽  
pp. 1665 ◽  
Author(s):  
D.G. Deppe ◽  
J.C. Campbell ◽  
R. Kuchibhotla ◽  
T.J. Rogers ◽  
B.G. Streetman
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Light Emitting

Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p–n junction engineering

2020 ◽  
Vol 127 (8) ◽  
pp. 085706 ◽  
Author(s):  
Lili Han ◽  
Minglong Zhao ◽  
Xiansheng Tang ◽  
Wenxue Huo ◽  
Zhen Deng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Luminescence Study ◽  
Multi Quantum Well
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