Fast phase transitions induced by picosecond electrical pulses on phase change memory cells

2008 ◽  
Vol 93 (4) ◽  
pp. 043121 ◽  
Author(s):  
W. J. Wang ◽  
L. P. Shi ◽  
R. Zhao ◽  
K. G. Lim ◽  
H. K. Lee ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Fast Phase ◽  
Electrical Pulses ◽  
Change Memory

scholarly journals Outlooks for development of silicon nanoparticle memory cells

2019 ◽  
Vol 5 (4) ◽  
pp. 159-164 ◽  
Author(s):  
Igor V. Talyzin ◽  
Vladimir M. Samsonov
Keyword(s):  
Molecular Dynamics ◽  
Phase Transitions ◽  
Phase Change ◽  
Silicon Nanoparticles ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Silicon Nanoparticle ◽  
Change Rate ◽  
Temperature Change Rate ◽  
Change Memory

Phase change memory is based on changes in the optical, electrical or other properties of materials during phase transitions, e.g. an amorphous to crystalline transition. Currently existing and potential applications of this memory are primarily based on multicomponent alloys of metals and semiconductors. However single-component nanoparticles including Si ones are also of interest as promising nanosized memory cells. The potential for developing this type of memory cells is confirmed by the fact that the optical absorption index of bulk amorphous silicon is of the same order of magnitude as that of crystalline silicon. Certainly this phenomenon can hardly be implemented with a single nanoparticle the size of which is within light wavelength. Using molecular dynamics and the Stillinger-Weber potential we have studied the regularities of melting and the conditions of crystallization of silicon nanoparticles containing within 105 atoms. We have shown that cooling of nanosized silicon drops at a 0.2 TK/s rate or higher rates causes their amorphous transition whereas single-component nanosized metallic drops crystallize in molecular dynamics experiments even at a 1 TK/s rate. Further heating of amorphous silicon nanoparticles containing above 5 ∙ 104 atoms causes their crystallization in a specific temperature range from 1300 to 1400 K. We have concluded that there is a possibility of developing phase change memory cells on the basis of the above phase transitions. An amorphous transition of a nanoparticle can be achieved by its melting and further cooling to room temperature at a 0.2 TK/s rate whereas a crystalline transition, by its heating to 1300–1400 K at a 0.2 TK/s rate followed by cooling. Results of molecular dynamics experiments suggest there is a minimum silicon nanoparticle size for which the development of phase change memory cells becomes theoretically impossible at a given temperature change rate. For a 0.2 TK/s temperature change rate this minimum size is 12.4 nm (number of atoms approx. 5 ∙ 104).

scholarly journals Enhancing Programming Variability in Multi-Bit Phase Change Memory Cells for Security

2020 ◽  
Vol 19 ◽  
pp. 820-828
Author(s):  
Nafisa Noor ◽  
Sadid Muneer ◽  
Raihan Sayeed Khan ◽  
Anna Gorbenko ◽  
Helena Silva
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Modeling of Set and Reset Operations of Phase-Change Memory Cells

2011 ◽  
Vol 32 (12) ◽  
pp. 1737-1739 ◽  
Author(s):  
Azer Faraclas ◽  
Nicholas Williams ◽  
Ali Gokirmak ◽  
Helena Silva
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Surface-Tensile-Stress Induced Polishing-Voids Suppression via H2O2 Oxidizer Effect in Cross-Point Phase-Change-Memory-Cells

2019 ◽  
Vol 8 (11) ◽  
pp. P667-P672
Author(s):  
Soo-Bum Kim ◽  
Hao Cui ◽  
Jong-Young Cho ◽  
Eun-Bin Seo ◽  
Sang-Su Yun ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Cross Point ◽  
Change Memory

Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse

2011 ◽  
Vol 98 (24) ◽  
pp. 242106 ◽  
Author(s):  
D. Q. Huang ◽  
X. S. Miao ◽  
Z. Li ◽  
J. J. Sheng ◽  
J. J. Sun ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Electric Pulse ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Temperature dependence of SET switching characteristics in phase-change memory cells

2016 ◽  
Vol 49 (38) ◽  
pp. 385101
Author(s):  
Qiang He ◽  
Zhen Li ◽  
Chang Liu ◽  
Xiang-ru Meng ◽  
Ju-hong Peng ◽  
...  
Keyword(s):  
Phase Change ◽  
Temperature Dependence ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Set Switching ◽  
Switching Characteristics ◽  
Change Memory

Stopping Resistance Drift in Phase Change Memory Cells

2020 ◽  
Author(s):  
Raihan S. Khan ◽  
ABM Hasan Talukder ◽  
Faruk Dirisaglik ◽  
Ali Gokirmak ◽  
Helena Silva
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Carbon-Based Liner for RESET Current Reduction in Self-Heating Phase- Change Memory Cells

2020 ◽  
Vol 67 (10) ◽  
pp. 4228-4233
Author(s):  
Anabel De Proft ◽  
Daniele Garbin ◽  
Gabriele Luca Donadio ◽  
Hubert Hody ◽  
Thomas Witters ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Self Heating ◽  
Heating Phase ◽  
Current Reduction ◽  
Change Memory ◽  
Carbon Based
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