Growth by molecular‐beam epitaxy and characterization of (InAs)m(GaAs)mshort period superlattices on InP substrates

1990 ◽  
Vol 68 (3) ◽  
pp. 1282-1286 ◽  
Author(s):  
Hideo Toyoshima ◽  
Takayoshi Anan ◽  
Kenichi Nishi ◽  
Toshinari Ichihashi ◽  
Akihiko Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inp Substrates

Photoreflectance Characterization of Ordered/Disordered GaAs0.5Sb0.5layers Grown on InP Substrates by Molecular Beam Epitaxy

2003 ◽  
Vol 42 (Part 1, No. 7A) ◽  
pp. 4288-4289 ◽  
Author(s):  
Yuichi Kawamura ◽  
Masanobu Amano ◽  
Koichi Ouchi ◽  
Naohisa Inoue
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inp Substrates

Characterization of InGaAs/Inp Epitaxial Layers Grown Over V-Groove Patterned Inp Substrates Using Gas Source Molecular Beam Epitaxy

1993 ◽  
Vol 326 ◽  
Author(s):  
N.J. Bulitka ◽  
A. Gupta ◽  
B.J. Robinson ◽  
D.A. Thompson ◽  
G.C. Weatherly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Gas Source ◽  
Inp Substrates

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

2017 ◽  
Vol 9 (36) ◽  
pp. 30786-30796 ◽  
Author(s):  
Yoon-Ho Choi ◽  
Dong-Hyeok Lim ◽  
Jae-Hun Jeong ◽  
Dambi Park ◽  
Kwang-Sik Jeong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area
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