Relation between magnetoresistance and nanostructure of current-perpendicular-to-plane giant-magnetoresistance film with current-confined-path nano-oxide layer

2008 ◽  
Vol 92 (26) ◽  
pp. 262509 ◽  
Author(s):  
Hiromi Yuasa ◽  
Michiko Hara ◽  
Hideaki Fukuzawa
Keyword(s):  
Oxide Layer ◽  
Giant Magnetoresistance ◽  
Nano Oxide ◽  
Current Perpendicular To Plane

Large Magnetoresistance Variation of Pseudo Spin Valves with Different Nano Oxide Layer Position

2007 ◽  
Vol 1032 ◽  
Author(s):  
Jeong Dae Suh ◽  
C.A. Ross
Keyword(s):  
Surface Roughness ◽  
Oxide Layer ◽  
Multilayer Structure ◽  
Giant Magnetoresistance ◽  
Spin Valves ◽  
Resistance Change ◽  
Nano Oxide ◽  
Shunting Effect ◽  
Spin Dependent Scattering ◽  
Layer Position

AbstractWe have investigated the influence of the nano-oxide layer positions on giant magnetoresistance(GMR) of the NiFe(9nm)/Cu(4nm)/Co(5nm) pseudo spin valves. Nano-oxide layer positions had a several effects on the multilayer structure that changes its magnetotransport behavior. GMR ratio varied between 2.8% and 0.15% depending on the nano-oxide layer positions within the stack. The increase of the GMR ratio was accompanied by increase in resistance change, decrease in sheet resistance, and decrease in surface roughness. These significant variations of GMR ratio was explained by the changes on the spin dependent scattering or current shunting effect. Our results showed that appropriate placement of a nano-oxide layer was essential fo optimize magnetoresistance and properties of spin valves.

Insertion of a Specular Reflective and Transmissive Nano-Oxide Layer into Giant Magnetoresistance Spin-Valve Structure

2006 ◽  
Vol 6 (11) ◽  
pp. 3483-3486 ◽  
Author(s):  
Chunghee Nam ◽  
Youngman Jang ◽  
Ki-Su Lee ◽  
Jungjin Shim ◽  
B. K. Cho
Keyword(s):  
Oxide Layer ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Nano Oxide ◽  
Valve Structure

High resolution structural characterization of giant magnetoresistance structures containing a nano-oxide layer

2007 ◽  
Vol 91 (1) ◽  
pp. 011905 ◽  
Author(s):  
C. Y. You ◽  
A. Cerezo ◽  
P. H. Clifton ◽  
L. Folks ◽  
M. J. Carey ◽  
...  
Keyword(s):  
High Resolution ◽  
Oxide Layer ◽  
Structural Characterization ◽  
Giant Magnetoresistance ◽  
Nano Oxide

Influence of nano-oxide layer on the giant magnetoresistance and exchange bias of NiMn/Co/Cu/Co spin valve sensors

2010 ◽  
Vol 107 (9) ◽  
pp. 093910 ◽  
Author(s):  
Anoop Gupta ◽  
Senthilnathan Mohanan ◽  
Michael Kinyanjui ◽  
Andrey Chuvilin ◽  
Ute Kaiser ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Exchange Bias ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Nano Oxide

Insertion of a Specular Reflective and Transmissive Nano-Oxide Layer into Giant Magnetoresistance Spin-Valve Structure

2006 ◽  
Vol 6 (11) ◽  
pp. 3483-3486
Author(s):  
Chunghee Nam ◽  
Youngman Jang ◽  
Ki-Su Lee ◽  
Jungjin Shim ◽  
B. K. Cho
Keyword(s):  
Oxide Layer ◽  
Sheet Resistance ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Interlayer Coupling ◽  
Free Layer ◽  
Uniform Layer ◽  
Nano Oxide ◽  
Valve Structure ◽  
Current Shunt

We have studied the influence of the insertion of a nano-oxide layer (NOL) into a magnetic GMR spin-valve. It was found that the spin-valve with NOL has a higher GMR ratio than that of the normal spin-valve without NOL. Naturally formed NOL without vacuum break shows a uniform layer, which effectively suppresses the current shunt, resulting in the reduction of the sheet resistance of GMR. The NOL spin-valve also shows a lower interlayer coupling (Hin) than that of the optimal normal spin-valve, which is consistent with AFM measurement showing lower roughness of NOL formed CoFe surface. Based on the advantage of NOL, we succeeded in lowering Hin while maintaining GMR ratio by insertion of NOL inside the CoFe free layer, where the free layer consists of CoFe/NOL/CoFe/NOL/Capping layer.

scholarly journals Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide layer

2009 ◽  
Vol 105 (7) ◽  
pp. 07D101 ◽  
Author(s):  
Jun Sato ◽  
Katsuyoshi Matsushita ◽  
Hiroshi Imamura
Keyword(s):  
Domain Wall ◽  
Oxide Layer ◽  
Nano Oxide ◽  
Current Perpendicular To Plane

Effect of the number of layers on determination of spin asymmetries in current-perpendicular-to-plane giant magnetoresistance

2011 ◽  
Vol 98 (4) ◽  
pp. 042503 ◽  
Author(s):  
Tomohiro Taniguchi ◽  
Hiroshi Imamura ◽  
Tomoya M. Nakatani ◽  
Kazuhiro Hono
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Asymmetries ◽  
Number Of Layers ◽  
Current Perpendicular To Plane
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