Insertion of a Specular Reflective and Transmissive Nano-Oxide Layer into Giant Magnetoresistance Spin-Valve Structure

2006 ◽  
Vol 6 (11) ◽  
pp. 3483-3486
Author(s):  
Chunghee Nam ◽  
Youngman Jang ◽  
Ki-Su Lee ◽  
Jungjin Shim ◽  
B. K. Cho
Keyword(s):  
Oxide Layer ◽  
Sheet Resistance ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Interlayer Coupling ◽  
Free Layer ◽  
Uniform Layer ◽  
Nano Oxide ◽  
Valve Structure ◽  
Current Shunt

We have studied the influence of the insertion of a nano-oxide layer (NOL) into a magnetic GMR spin-valve. It was found that the spin-valve with NOL has a higher GMR ratio than that of the normal spin-valve without NOL. Naturally formed NOL without vacuum break shows a uniform layer, which effectively suppresses the current shunt, resulting in the reduction of the sheet resistance of GMR. The NOL spin-valve also shows a lower interlayer coupling (Hin) than that of the optimal normal spin-valve, which is consistent with AFM measurement showing lower roughness of NOL formed CoFe surface. Based on the advantage of NOL, we succeeded in lowering Hin while maintaining GMR ratio by insertion of NOL inside the CoFe free layer, where the free layer consists of CoFe/NOL/CoFe/NOL/Capping layer.

Insertion of a Specular Reflective and Transmissive Nano-Oxide Layer into Giant Magnetoresistance Spin-Valve Structure

2006 ◽  
Vol 6 (11) ◽  
pp. 3483-3486 ◽  
Author(s):  
Chunghee Nam ◽  
Youngman Jang ◽  
Ki-Su Lee ◽  
Jungjin Shim ◽  
B. K. Cho
Keyword(s):  
Oxide Layer ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Nano Oxide ◽  
Valve Structure

Influence of nano-oxide layer on the giant magnetoresistance and exchange bias of NiMn/Co/Cu/Co spin valve sensors

2010 ◽  
Vol 107 (9) ◽  
pp. 093910 ◽  
Author(s):  
Anoop Gupta ◽  
Senthilnathan Mohanan ◽  
Michael Kinyanjui ◽  
Andrey Chuvilin ◽  
Ute Kaiser ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Exchange Bias ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Nano Oxide

Origin of Thermal Stability of IrMn Based Specular Spin Valve Type GMR Multilayer

2004 ◽  
Vol 449-452 ◽  
pp. 1065-1068 ◽  
Author(s):  
S.Y. Yoon ◽  
D.H. Lee ◽  
K.H. Jeong ◽  
D.H. Yoon ◽  
Su Jeong Suh
Keyword(s):  
Thermal Stability ◽  
Oxide Layer ◽  
Thermal Annealing ◽  
Diffusion Barrier ◽  
Spin Valve ◽  
Free Layer ◽  
Valve System ◽  
Nano Oxide ◽  
Thermal Stability Of

By using the sputtering process, we made the IrMn based specular spin valve system, whose nano-oxide layer (NOL) was formed by natural oxidation. After thermal annealing at 305 and 410 °C, the thermal stability of the specular spin valve was observed. We found that the highest magnetoresistance (MR) ratio of about 12 % MR was produced after optimum annealing at 305 °C but the sample annealed at 410 °C also had a high MR ratio about 10 %. It is superior to other studies at this temperature. Based on the AES and XPS results, we could conclude that this enhanced thermal stability was due to the stable Cu layer between the pinned layer and free layer and to the NOL as a diffusion barrier for the Mn.

Magnetoimpedance behavior and its equivalent circuit analysis of Co/Cu/Co/Py pseudo-spin-valve with a nano-oxide layer

2009 ◽  
Vol 105 (3) ◽  
pp. 033915 ◽  
Author(s):  
Wei-Chih Chien ◽  
Yeong-Der Yao ◽  
Jiann-Kuo Wu ◽  
Chi-Kuen Lo ◽  
Ruei-Feng Hung ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Oxide Layer ◽  
Spin Valve ◽  
Circuit Analysis ◽  
Equivalent Circuit Analysis ◽  
Nano Oxide

Effect of nano oxide layer on exchange bias and GMR in Mn–Ir–Pt based spin valve

2004 ◽  
Vol 272-276 ◽  
pp. 1903-1904 ◽  
Author(s):  
D.M. Jeon ◽  
J.P. Lee ◽  
D.H. Lee ◽  
S.Y. Yoon ◽  
Y.S. Kim ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Exchange Bias ◽  
Spin Valve ◽  
Nano Oxide

Nano-oxide layer and magnetic properties in Mn–Ir–Pt-based spin valve multilayers

2005 ◽  
Vol 475 (1-2) ◽  
pp. 243-245 ◽  
Author(s):  
D.M. Jeon ◽  
J.P. Lee ◽  
D.H. Lee ◽  
S.Y. Yoon ◽  
J.H. Kim ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Oxide Layer ◽  
Spin Valve ◽  
Nano Oxide

Large Magnetoresistance Variation of Pseudo Spin Valves with Different Nano Oxide Layer Position

2007 ◽  
Vol 1032 ◽  
Author(s):  
Jeong Dae Suh ◽  
C.A. Ross
Keyword(s):  
Surface Roughness ◽  
Oxide Layer ◽  
Multilayer Structure ◽  
Giant Magnetoresistance ◽  
Spin Valves ◽  
Resistance Change ◽  
Nano Oxide ◽  
Shunting Effect ◽  
Spin Dependent Scattering ◽  
Layer Position

AbstractWe have investigated the influence of the nano-oxide layer positions on giant magnetoresistance(GMR) of the NiFe(9nm)/Cu(4nm)/Co(5nm) pseudo spin valves. Nano-oxide layer positions had a several effects on the multilayer structure that changes its magnetotransport behavior. GMR ratio varied between 2.8% and 0.15% depending on the nano-oxide layer positions within the stack. The increase of the GMR ratio was accompanied by increase in resistance change, decrease in sheet resistance, and decrease in surface roughness. These significant variations of GMR ratio was explained by the changes on the spin dependent scattering or current shunting effect. Our results showed that appropriate placement of a nano-oxide layer was essential fo optimize magnetoresistance and properties of spin valves.

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