Formulization of long-time domain switching around the coercive field from imprint measurements on ferroelectric thin films

2008 ◽  
Vol 103 (12) ◽  
pp. 124112 ◽  
Author(s):  
A. Q. Jiang ◽  
J. W. Fei ◽  
Y. Y. Lin ◽  
T. A. Tang
Keyword(s):  
Thin Films ◽  
Time Domain ◽  
Coercive Field ◽  
Domain Switching ◽  
Ferroelectric Thin Films ◽  
Long Time

The role of nanoporosity on the local piezo and ferroelectric properties of lead titanate thin films

2015 ◽  
Vol 3 (5) ◽  
pp. 1035-1043 ◽  
Author(s):  
Alichandra Castro ◽  
Paula Ferreira ◽  
Brian J. Rodriguez ◽  
Paula M. Vilarinho
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Lead Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Piezoelectric Response ◽  
Nanoporous Films ◽  
Switching Behaviour ◽  
Dense Films

Nanoporous PbTiO3 films present enhanced tetragonality at lower temperatures than respective dense films. Moreover, the porosity present in the nanoporous films allows an increase of the local piezoelectric response and a decrease of the local coercive field. As a result, these nanoporous films might be used to improve the switching behaviour of ferroelectric thin films.

scholarly journals Domain switching and spatial dependence of permittivity in ferroelectric thin films

1997 ◽  
Vol 82 (5) ◽  
pp. 2505-2516 ◽  
Author(s):  
Francis K. Chai ◽  
J. R. Brews ◽  
R. D. Schrimpf ◽  
D. P. Birnie
Keyword(s):  
Thin Films ◽  
Spatial Dependence ◽  
Domain Switching ◽  
Ferroelectric Thin Films

Microstructure and Properties of A-Site Doping Bi4-xYxTi3O12 Ferrroelectric Thin Films

2015 ◽  
Vol 815 ◽  
pp. 171-175
Author(s):  
Hong Cheng Liu ◽  
Wei Jun Zhang ◽  
Xiao Chen Zhang ◽  
Qian Yu ◽  
Jue Wang
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Phase Development ◽  
Sol Gel Process ◽  
A Site

s. Yttium-substituted bismuth titanate (Bi4-xYxTi3O12, BYT) thin films were deposited on the (111)Pt/Ti/SiO2(100) substrates by a modified Sol-Gel process and studied in this work in terms ofY3+-modified microstructure and phase development as well as ferroelectric properties. With the aid of the fist-principle, the position of Y3+substitution for Bi3+on the microstructure of BYT was studied.The phase change in the formation of BYT crystalline and the effect of Y3+substitution for Bi3+on the microstructure of BYT was studiedbyXRD. The results showed that the optimal properties of the obtained BYT ferroelectric thin films werex:0.6. The ferroelectric properties of the films were also investigated. When the Y-substituted contentxwas equal to 0.6, the remnant polarization was the largest. The remnant polarization 2Prvalue was equal to 16.02μC/cm2and the coercive fieldEcvalue was 88 kV/cm.

Influence of Ta content on the physical properties of SrBi2Ta2O9 ferroelectric thin films

2006 ◽  
Vol 21 (12) ◽  
pp. 3124-3133 ◽  
Author(s):  
Fan-Yi Hsu ◽  
Ching-Chich Leu ◽  
Chao-Hsin Chien ◽  
Chen-Ti Hu
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Spin Coating ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Preferential Orientation ◽  
Strontium Bismuth Tantalate ◽  
Metalorganic Decomposition

We have investigated the effect that the Ta content has on the ferroelectric properties of strontium bismuth tantalate (SBT) thin films synthesized using metalorganic decomposition (MOD) and spin coating techniques. The physical properties of these SBT samples were strongly dependent upon the Ta ratio. Polarization measurements revealed that Ta-deficient SBT exhibited a relatively low coercive field (2Ec ∼ 87 kV/cm) and a high remanent polarization (2Pr ∼ 15 μC/cm2). The value of 2Pr decreased as the Ta ratio in SBT increased. The improved ferroelectric properties of the Ta-deficient SBT samples may have resulted from the uniformly well-grown bismuth-layered-structured (BLS) phases of the films and their highly preferential orientation along the a and b axes. We suggest that the incorporation of Ta vacancies plays an important role in enhancing the crystallinities and microstructures of Ta-deficient SBT films.

Temperature dependence of ferroelectricity and domain switching behavior in Pb(Zr0·3Ti0.7)O3 ferroelectric thin films

2019 ◽  
Vol 45 (14) ◽  
pp. 18030-18036 ◽  
Author(s):  
Xi Chen ◽  
Xiaojun Qiao ◽  
Liaoyuan Zhang ◽  
Jing Zhang ◽  
Qicheng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Domain Switching ◽  
Ferroelectric Thin Films ◽  
Switching Behavior
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