Thickness dependence of switching time and coercive field in ferroelectric thin films

2011 ◽  
Vol 109 (8) ◽  
pp. 084109 ◽  
Author(s):  
Ahmad Musleh Alrub ◽  
Lye-Hock Ong
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Switching Time ◽  
Ferroelectric Thin Films ◽  
Thickness Dependence

THICKNESS DEPENDENCE OF THE COERCIVE FIELD IN FERROELECTRIC THIN FILMS

2006 ◽  
Vol 20 (22) ◽  
pp. 3223-3231
Author(s):  
ZHAN-NING HU ◽  
V. C. LO
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Nearest Neighbor ◽  
Dipole Moments ◽  
Ferroelectric Thin Films ◽  
Thickness Dependence ◽  
Experimental Result ◽  
Space Charges ◽  
Domain Boundaries ◽  
Similar Report

By considering the effects of the space charges and domain boundaries in ferroelectric thin films, the thickness dependence of coercive field (Ec) is numerically simulated based on the four-state Potts model with the nearest-neighbor interactions between dipole moments. For large thickness, experimental results where Ec decreases with thickness can be produced from our Monte-Carlo simulation. On the other hand, when the thickness is very small, our simulation gets that Ec increases with thickness by the study of the polarization switching in the film. This gives an explanation of the experimental result by Zhu et al. in J. Appl. Phys.83, 1 (1998) for SBT-BTN film, and a similar report by Bune et al. in Nature391, 874 (1998) for the crystalline film. The critical temperature of the thin film is also discussed.

The role of nanoporosity on the local piezo and ferroelectric properties of lead titanate thin films

2015 ◽  
Vol 3 (5) ◽  
pp. 1035-1043 ◽  
Author(s):  
Alichandra Castro ◽  
Paula Ferreira ◽  
Brian J. Rodriguez ◽  
Paula M. Vilarinho
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Lead Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Piezoelectric Response ◽  
Nanoporous Films ◽  
Switching Behaviour ◽  
Dense Films

Nanoporous PbTiO3 films present enhanced tetragonality at lower temperatures than respective dense films. Moreover, the porosity present in the nanoporous films allows an increase of the local piezoelectric response and a decrease of the local coercive field. As a result, these nanoporous films might be used to improve the switching behaviour of ferroelectric thin films.

Microstructure and Properties of A-Site Doping Bi4-xYxTi3O12 Ferrroelectric Thin Films

2015 ◽  
Vol 815 ◽  
pp. 171-175
Author(s):  
Hong Cheng Liu ◽  
Wei Jun Zhang ◽  
Xiao Chen Zhang ◽  
Qian Yu ◽  
Jue Wang
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Phase Development ◽  
Sol Gel Process ◽  
A Site

s. Yttium-substituted bismuth titanate (Bi4-xYxTi3O12, BYT) thin films were deposited on the (111)Pt/Ti/SiO2(100) substrates by a modified Sol-Gel process and studied in this work in terms ofY3+-modified microstructure and phase development as well as ferroelectric properties. With the aid of the fist-principle, the position of Y3+substitution for Bi3+on the microstructure of BYT was studied.The phase change in the formation of BYT crystalline and the effect of Y3+substitution for Bi3+on the microstructure of BYT was studiedbyXRD. The results showed that the optimal properties of the obtained BYT ferroelectric thin films werex:0.6. The ferroelectric properties of the films were also investigated. When the Y-substituted contentxwas equal to 0.6, the remnant polarization was the largest. The remnant polarization 2Prvalue was equal to 16.02μC/cm2and the coercive fieldEcvalue was 88 kV/cm.

Influence of Ta content on the physical properties of SrBi2Ta2O9 ferroelectric thin films

2006 ◽  
Vol 21 (12) ◽  
pp. 3124-3133 ◽  
Author(s):  
Fan-Yi Hsu ◽  
Ching-Chich Leu ◽  
Chao-Hsin Chien ◽  
Chen-Ti Hu
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Spin Coating ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Preferential Orientation ◽  
Strontium Bismuth Tantalate ◽  
Metalorganic Decomposition

We have investigated the effect that the Ta content has on the ferroelectric properties of strontium bismuth tantalate (SBT) thin films synthesized using metalorganic decomposition (MOD) and spin coating techniques. The physical properties of these SBT samples were strongly dependent upon the Ta ratio. Polarization measurements revealed that Ta-deficient SBT exhibited a relatively low coercive field (2Ec ∼ 87 kV/cm) and a high remanent polarization (2Pr ∼ 15 μC/cm2). The value of 2Pr decreased as the Ta ratio in SBT increased. The improved ferroelectric properties of the Ta-deficient SBT samples may have resulted from the uniformly well-grown bismuth-layered-structured (BLS) phases of the films and their highly preferential orientation along the a and b axes. We suggest that the incorporation of Ta vacancies plays an important role in enhancing the crystallinities and microstructures of Ta-deficient SBT films.

Frequency dependence of the coercive field and the internal bias field in ferroelectric thin films

2009 ◽  
Vol 51 (7) ◽  
pp. 1348-1350 ◽  
Author(s):  
A. S. Sidorkin ◽  
L. P. Nesterenko ◽  
S. V. Ryabtsev ◽  
A. A. Sidorkin
Keyword(s):  
Thin Films ◽  
Frequency Dependence ◽  
Coercive Field ◽  
Bias Field ◽  
Ferroelectric Thin Films ◽  
Internal Bias ◽  
Internal Bias Field

Ti-site Substitution Using the Higher-valent Cation for Enhancing the Ferroelectric Properties of Nd3+−substituted Bismuth Titanate Thin Films

2003 ◽  
Vol 784 ◽  
Author(s):  
Hiroshi Uchida ◽  
Seiichiro Koda ◽  
Hirofumi Matsuda ◽  
Takashi Iijima ◽  
Takayuki Watanabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates

ABSTRACTTi-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd)4Ti3O12(BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50)1-(x/12)(Ti3.00-xVx)O15(x= 0 ∼ 0.09), were fabricated on (111)Pt/Ti/ SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

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