Influence of photon reabsorption on temperature dependent quasi-steady-state photoluminescence lifetime measurements on crystalline silicon

2008 ◽  
Vol 92 (22) ◽  
pp. 222112 ◽  
Author(s):  
Marc Rüdiger ◽  
Thorsten Trupke ◽  
Peter Würfel ◽  
Thomas Roth ◽  
Stefan W. Glunz
Keyword(s):  
Steady State ◽  
Crystalline Silicon ◽  
Quasi Steady State ◽  
Temperature Dependent ◽  
Lifetime Measurements ◽  
Photoluminescence Lifetime

scholarly journals Quasi-steady-state photoconductance bulk lifetime measurements on silicon ingots with deeper photogeneration

AIP Advances ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 015128 ◽  
Author(s):  
Mohsen Goodarzi ◽  
Ronald Sinton ◽  
Daniel Macdonald
Keyword(s):  
Steady State ◽  
Quasi Steady State ◽  
Lifetime Measurements

scholarly journals Application of Quasi-Steady-State Photoconductance Technique to Lifetime Measurements on Crystalline Germanium Substrates

2020 ◽  
Vol 10 (4) ◽  
pp. 1068-1075
Author(s):  
Isidro Martin ◽  
Alba Alcaniz ◽  
Alba Jimenez ◽  
Gema Lopez ◽  
Carlos del Canizo ◽  
...  
Keyword(s):  
Steady State ◽  
Quasi Steady State ◽  
Lifetime Measurements ◽  
Germanium Substrates ◽  
Crystalline Germanium

Study of Surface Passivation of CZ c-Si by PECVD a-Si:H Films; A Comparison Between Quasi-Steady-State and Transient Photoconductance Decay Measurement

2013 ◽  
Vol 1536 ◽  
Author(s):  
Omid Madani Ghahfarokhi ◽  
Karsten von Maydell ◽  
Carsten Agert
Keyword(s):  
Steady State ◽  
Gas Flow ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Minority Carrier Lifetime ◽  
Hydrogen Gas ◽  
Quasi Steady State ◽  
Effective Lifetime ◽  
Transient Mode

ABSTRACTWe have investigated the passivation of low lifetime non-polished Czochralski (CZ) mono-crystalline silicon (c-Si) wafers by hydrogenated amorphous silicon (a-Si:H), deposited by plasma enhanced chemical vapor deposition (PECVD) technique. The dependence of the effective lifetime (τeff) on the deposition parameters including hydrogen gas flow, power and temperature has been studied. Minority carrier lifetime was measured as deposited and also after an annealing step in both quasi-steady-state (QSS) and transient mode of photoconductance decay. By comparison between τeff measured in each of the aforementioned modes, two distinguishable behaviors could be observed. Moreover, to get further insight into the surface passivation mechanism, we have modeled the recombination at a-Si:H/c-Si interface based on the amphoteric nature of dangling bonds. The results of our modeling show that the discrepancy observed between QSS and transient mode is due to the high recombination rate that exists in the bulk of defective CZ wafer and also partly related to the different thicknesses monitored in each mode. So, by comparison between the injection level dependency of τeff measured in QSS and transient modes, we introduce a valuable technique for the evaluation of c-Si bulk lifetime.

Luminescence of doped nanocrystalline ZnSe

2001 ◽  
Vol 667 ◽  
Author(s):  
J. F. Suyver ◽  
S. F. Wuister ◽  
T. van der Beek ◽  
J. J. Kelly ◽  
A. Meijerink
Keyword(s):  
Chemical Synthesis ◽  
Crystal Size ◽  
Synthesis Method ◽  
Host Lattice ◽  
Organic Chemical ◽  
Photoluminescence Spectra ◽  
Temperature Dependent ◽  
Lifetime Measurements ◽  
Photoluminescence Lifetime ◽  
Temperature Dependent Photoluminescence

ABSTRACTLuminescence of nanocrystalline ZnSe:Mn2+ and ZnSe:Cu2+ prepared via an organic chemical synthesis method are described. The spectra show distinct ZnSe, Mn2+ and Cu2+ related emissions, all of which are excited via the host lattice. The Mn2+ emission wavelength depends on the concentration of Mn2+incorporated into the ZnSe lattice, which is attributed to the presence of Mn2+ pair-states at higher concentrations. The ZnSe:Cu2+ luminescence was studied as a function of the crystal-size. Temperature-dependent photoluminescence spectra and photoluminescence lifetime measurements are also presented and the results are compared to those of Mn2+ and Cu2+ in bulk ZnSe.

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