Trapping artifacts in quasi-steady-state photoluminescence and photoconductance lifetime measurements on silicon wafers

2006 ◽  
Vol 88 (5) ◽  
pp. 053504 ◽  
Author(s):  
R. A. Bardos ◽  
T. Trupke ◽  
M. C. Schubert ◽  
T. Roth
Keyword(s):  
Steady State ◽  
Silicon Wafers ◽  
Quasi Steady State ◽  
Lifetime Measurements

Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence

2010 ◽  
Vol 97 (9) ◽  
pp. 092109 ◽  
Author(s):  
J. A. Giesecke ◽  
M. C. Schubert ◽  
D. Walter ◽  
W. Warta
Keyword(s):  
Steady State ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers ◽  
Quasi Steady State

scholarly journals Quasi-steady-state photoconductance bulk lifetime measurements on silicon ingots with deeper photogeneration

AIP Advances ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 015128 ◽  
Author(s):  
Mohsen Goodarzi ◽  
Ronald Sinton ◽  
Daniel Macdonald
Keyword(s):  
Steady State ◽  
Quasi Steady State ◽  
Lifetime Measurements

scholarly journals Application of Quasi-Steady-State Photoconductance Technique to Lifetime Measurements on Crystalline Germanium Substrates

2020 ◽  
Vol 10 (4) ◽  
pp. 1068-1075
Author(s):  
Isidro Martin ◽  
Alba Alcaniz ◽  
Alba Jimenez ◽  
Gema Lopez ◽  
Carlos del Canizo ◽  
...  
Keyword(s):  
Steady State ◽  
Quasi Steady State ◽  
Lifetime Measurements ◽  
Germanium Substrates ◽  
Crystalline Germanium

Network reconstruction based on steady-state data

2008 ◽  
Vol 45 ◽  
pp. 161-176 ◽  
Author(s):  
Eduardo D. Sontag
Keyword(s):  
Steady State ◽  
Reverse Engineering ◽  
Theoretical Method ◽  
Network Reconstruction ◽  
Quasi Steady State ◽  
State Data

This paper discusses a theoretical method for the “reverse engineering” of networks based solely on steady-state (and quasi-steady-state) data.

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