Influence of photon reabsorption on quasi-steady-state photoluminescence measurements on crystalline silicon

2006 ◽  
Vol 100 (6) ◽  
pp. 063531 ◽  
Author(s):  
T. Trupke
Keyword(s):  
Steady State ◽  
Crystalline Silicon ◽  
Quasi Steady State

Study of Surface Passivation of CZ c-Si by PECVD a-Si:H Films; A Comparison Between Quasi-Steady-State and Transient Photoconductance Decay Measurement

2013 ◽  
Vol 1536 ◽  
Author(s):  
Omid Madani Ghahfarokhi ◽  
Karsten von Maydell ◽  
Carsten Agert
Keyword(s):  
Steady State ◽  
Gas Flow ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Minority Carrier Lifetime ◽  
Hydrogen Gas ◽  
Quasi Steady State ◽  
Effective Lifetime ◽  
Transient Mode

ABSTRACTWe have investigated the passivation of low lifetime non-polished Czochralski (CZ) mono-crystalline silicon (c-Si) wafers by hydrogenated amorphous silicon (a-Si:H), deposited by plasma enhanced chemical vapor deposition (PECVD) technique. The dependence of the effective lifetime (τeff) on the deposition parameters including hydrogen gas flow, power and temperature has been studied. Minority carrier lifetime was measured as deposited and also after an annealing step in both quasi-steady-state (QSS) and transient mode of photoconductance decay. By comparison between τeff measured in each of the aforementioned modes, two distinguishable behaviors could be observed. Moreover, to get further insight into the surface passivation mechanism, we have modeled the recombination at a-Si:H/c-Si interface based on the amphoteric nature of dangling bonds. The results of our modeling show that the discrepancy observed between QSS and transient mode is due to the high recombination rate that exists in the bulk of defective CZ wafer and also partly related to the different thicknesses monitored in each mode. So, by comparison between the injection level dependency of τeff measured in QSS and transient modes, we introduce a valuable technique for the evaluation of c-Si bulk lifetime.

Network reconstruction based on steady-state data

2008 ◽  
Vol 45 ◽  
pp. 161-176 ◽  
Author(s):  
Eduardo D. Sontag
Keyword(s):  
Steady State ◽  
Reverse Engineering ◽  
Theoretical Method ◽  
Network Reconstruction ◽  
Quasi Steady State ◽  
State Data

This paper discusses a theoretical method for the “reverse engineering” of networks based solely on steady-state (and quasi-steady-state) data.

Quasi-steady-state performance of a heat pipe subjected to transient acceleration loadings

10.2514/3.895 ◽  
1997 ◽  
Vol 11 ◽  
pp. 306-309 ◽  
Author(s):  
Edwin H. Olmstead ◽  
Edward S. Taylor ◽  
Meng Wang ◽  
Parviz Moin ◽  
Scott K. Thomas ◽  
...  
Keyword(s):  
Steady State ◽  
Heat Pipe ◽  
Quasi Steady State ◽  
Steady State Performance

A Graphical Method for Storage Coefficient Determination from Quasi-Steady State Flow Data

1996 ◽  
Vol 27 (4) ◽  
pp. 247-254 ◽  
Author(s):  
Zekâi Şen
Keyword(s):  
Steady State ◽  
Graphical Method ◽  
Pumping Test ◽  
Quasi Steady State ◽  
Flow Data ◽  
Steady State Flow ◽  
Storage Coefficient ◽  
State Flow ◽  
Aquifer Test

A simple, approximate but practical graphical method is proposed for estimating the storage coefficient independently from the transmissivity value, provided that quasi-steady state flow data are available from a pumping test. In the past, quasi-steady state flow distance-drawdown data have been used for the determination of transmissivity only. The method is applicable to confined and leaky aquifers. The application of the method has been performed for various aquifer test data available in the groundwater literature. The results are within the practical limits of approximation compared with the unsteady state flow solutions.

Sign in / Sign up

Export Citation Format

Share Document