Solution synthesis and dielectric properties of alumina thin films: understanding the role of the organic additive in film formation

2021 ◽  
Author(s):  
Rudolf C. Hoffmann ◽  
Maciej O. Liedke ◽  
Maik Butterling ◽  
Andreas Wagner ◽  
Vanessa Trouillet ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Film Formation ◽  
Positron Annihilation Spectroscopy ◽  
Organic Additive ◽  
Size Distributions ◽  
Solution Synthesis ◽  
Pore Size Distributions ◽  
Insulating Properties

Positron annihilation spectroscopy is used to characterize pore size distributions in alumina thin films. Differences in the microstructure can be correlated to dielectric behaviour and insulating properties.

A New X-Ray Scattering Method for Determining Pore-Size Distribution in Low-k Thin Films

2001 ◽  
Vol 714 ◽  
Author(s):  
Kazuhiko Omote ◽  
Shigeru Kawamura
Keyword(s):  
Thin Films ◽  
Pore Size Distribution ◽  
Pore Size ◽  
Gas Adsorption ◽  
Size Distributions ◽  
X Ray ◽  
X Ray Scattering ◽  
Pore Size Distributions ◽  
Scattering Technique ◽  
Ray Scattering

ABSTRACTWe have successively developed a new x-ray scattering technique for a non-destructive determination of pore-size distributions in porous low-κ thin films formed on thick substrates. The pore size distribution in a film is derived from x-ray diffuse scattering data, which are measured using offset θ/2θ scans to avoid strong specular reflections from the film surface and its substrate. Γ-distribution mode for the pores in the film is used in the calculation. The average diameter and the dispersion parameter of the Γ-distribution function are varied and refined by computer so that the calculated scattering pattern best matches to the experimental pattern. The technique has been used to analyze porous methyl silsesquioxane (MSQ) films. The pore size distributions determined by the x-ray scattering technique agree with that of the commonly used gas adsorption technique. The x-ray technique has been also used successfully determine small pores less than one nanometer in diameter, which is well below the lowest limit of the gas adsorption technique.

The role of cerium(iii)/yttrium(iii) nitrate hexahydrate salts on electroactive β phase nucleation and dielectric properties of poly(vinylidene fluoride) thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (36) ◽  
pp. 28487-28496 ◽  
Author(s):  
Pradip Thakur ◽  
Arpan Kool ◽  
Biswajoy Bagchi ◽  
Nur Amin Hoque ◽  
Sukhen Das ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Vinylidene Fluoride ◽  
Nitrate Hexahydrate ◽  
Yttrium Nitrate ◽  
Β Phase ◽  
Poly Vinylidene Fluoride ◽  
Phase Nucleation ◽  
Yttrium Nitrate Hexahydrate

Electroactive β phase nucleation in cerium/yttrium nitrate hexahydrate salt modified PVDF thin filmsviaformation of hydrogen bonds.

scholarly journals Effect of Annealing Process on the Dielectric and Tunable Properties of (Bi1.5Zn0.5)(Nb0.5Ti1.5)O7(BZNT) Thin Film

2021 ◽  
Vol 2133 (1) ◽  
pp. 012009
Author(s):  
Yijian Ma ◽  
Shuang Hou ◽  
Linfeng Lv ◽  
Jiatian Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Initial Temperature ◽  
Film Formation ◽  
Rf Magnetron Sputtering ◽  
Annealing Process ◽  
Si Substrates ◽  
Structure Surface

Abstract Bi1.5Zn0.5Nb0.5Ti1.5O7 (BZNT) thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency (rf) magnetron sputtering. In this paper, by studying the phase structure, surface morphology, and dielectric properties of BZNT films, it is found that by increasing the initial temperature in the annealing process, the film formation quality, internal stress and dielectric properties of the film can be improved. and the best performance of the BZNT film is obtained under the annealing process at the initial temperature of 500°C. The tuning amount (Tu), Dielectric loss (Loss) and quality factor (FOM) are: 13.55 percent, 0.00298 and 45.46, respectively.

scholarly journals Porogen Effect of Solvents on Pore Size Distribution of Solvent-Casted Polycaprolactone Thin Films

2018 ◽  
Vol 1 (4) ◽  
Author(s):  
Fariba Safaei ◽  
Shahla Khalili ◽  
Saied Nouri Khorasani ◽  
Laleh Ghasemi-Mobarakeh ◽  
Rasoul Esmaeely Neisiany
Keyword(s):  
Thin Films ◽  
Pore Size Distribution ◽  
Pore Size ◽  
Size Distribution ◽  
Methylene Chloride ◽  
Size Distributions ◽  
Solvent Casting ◽  
Casting Method ◽  
Effect Of Solvents ◽  
Pore Size Distributions

In this study, the effect of porogenic solvents on pore size distribution of the polycaprolactone (PCL) thin films was investigated. Five thin PCL films were prepared using the solvent-casting method. Chloroform, Methylene Chloride (MC) and three different compositions of MC/ Dimethylformamide (DMF) (80/20, 50/50 and 20/80) were used as solvents. Scanning Electron Microscopy (SEM) investigations were employed to study morphology and consequently the pore size distribution of the prepared films. The PCL films made by chloroform and MC as a solvent were completely non-porous. Whereas the other films (made by a combination of MC and DMF) showed both uni-modal and bi-modal pore size distributions.

Numerical Modeling of Straining: The Role of Particle and Pore Size Distributions

2017 ◽  
Vol 120 (3) ◽  
pp. 535-551 ◽  
Author(s):  
Eduardo R. Gomes ◽  
Adriano Santos ◽  
Sidarta A. Lima
Keyword(s):  
Numerical Modeling ◽  
Pore Size ◽  
Size Distributions ◽  
Pore Size Distributions

Role of stress on the phase control and dielectric properties of (1-x) BiFeO3 - xBa0.5Sr0.5TiO3 solid solution thin films

2005 ◽  
Vol 875 ◽  
Author(s):  
Chin Moo Cho ◽  
Hee Bum Hong ◽  
Kug Sun Hong
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Dielectric Properties ◽  
Loss Tangent ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Parameter Mismatch ◽  
Si Substrates ◽  
Bst Films

AbstractDielectric properties and structure of (1-x) BiFeO3 (BFO) - x Ba0.5Sr0.5TiO3 (BST) (x = 0 ∼1) solid solution thin films were investigated. All films were prepared at 600 oC on (111) oriented Pt / TiO2 / SiO2 / Si substrates by pulsed laser deposition (PLD) technique. Solid solution could be achieved in all composition ranges, evidenced by X-ray diffraction (XRD) and field emission scanning electric microscope (FE-SEM). The intermediate compositions (0.4 = x = 0.8) exhibited a distinct (111) oriented cubic perovskite structure, while rhombohedra symmetry was found in the x < 0.4 range. Dielectric constant and tunability of the (1-x) BFO – x BST films within this composition region (0.4 = x = 0.8) decreased from 1110 to 920 at 1 MHz, and increased from 28.34 % to 32.42 % at 200 kV/cm, respectively, while loss tangent remains constant. A systematic decrease in lattice parameter with BST addition reduced stress due to reduction of lattice parameter mismatch between film and the substrate. In that range, the improvement of the dielectric properties without a degradation of loss tangent is attributed to the presence of the stress relaxation, which was quantitatively confirmed by a surface profiler based on Stoney's equation.

Grain Growth in Al-(Cu, Pd, Nb) Thin Films

1993 ◽  
Vol 309 ◽  
Author(s):  
J.D. Mis ◽  
K.P. Rodbell
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Growth ◽  
Weight Percent ◽  
Size Distributions ◽  
Precipitate Morphology ◽  
X Ray ◽  
Transmission Electron ◽  
Grain Size Distributions

AbstractThe microstructure of 1 μim thick Al films containing 0.5 and 2%Cu (weight percent), 0.3%Pd, and 0.3%Pd-0.3%Nb were investigated by transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDS) as a function of isochronal and isothermal anneals. The grain size, grain size distribution, and precipitate morphology of these films was measured from 200 to 500ºC, with the activation energy for grain growth (Ea) determined for I h anneals at 200, 300, 400 and 500ºC. Normal grain growth was recorded for the A1Cu films annealed at temperatures ≤400ºC; however secondary grain growth occurred in the AI-2Cu film annealed for I h at 500ºC, with grains as large as 16 μm in diameter observed. Grain growth in the AI-0.3Pd films resulted in strongly bi-modal grain size distributions, with the onset ofsignificant grain growth retarded for I h anneals at temperatures ≤300ºC.The addition of Nb to the AI-0.3Pd film resulted in monomodal grain size distributions over the entire temperature range. The role of crystallographic texture on grain growth in thin films is discussed.

scholarly journals Pore size distributions in low-k dielectric thin films from X-ray porosimetry

2002 ◽  
Vol 40 (19) ◽  
pp. 2170-2177 ◽  
Author(s):  
Hae-Jeong Lee ◽  
Christopher L. Soles ◽  
Da-Wei Liu ◽  
Barry J. Bauer ◽  
Wen-Li Wu
Keyword(s):  
Thin Films ◽  
Pore Size ◽  
Size Distributions ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Pore Size Distributions ◽  
Low K
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